Recombination Parameter of Gallium Indium Arsenide (GaInAs)

GaInAs - Gallium Indium Arsenide

Electrical properties

Basic Parameters
Mobility and Hall Effect
Two-dimensional electron and hole gas mobility in heterostructures
Transport Properties in High Electric Fields
Impact Ionization
Recombination Parameters

Recombination Parameter

Nonradiative (curves 1 and 2) and radiative (curves 3 and 4) lifetimes for Ga0.47In0.53As versus majority carrier density. T=300 K.
Solid curves are dependences for n-type,
dushed curves are dependeces for p-type.
Henry et al. (1984)
Coefficient of the bimolecular recombination as a function of temperature for Ga0.47In0.53As.
Zielinski et al. (1986)
Electron diffusion length in p-Ga0.47In0.53As as a function of hole concentration.
Ambree et al. (1992)

Pure n-type:



      The longest lifetime of holes τp ≤ 10 s Ga0.47In0.53As; no~2·1015 cm-3  
      Diffusion length Lp=(Dp·Lp)1/2      Lp≤100 µm Ga0.47In0.53As; no~2·1015 cm-3  
Surface recombination velocity <106 cm/s  
Radiative recombination coefficient 0.96·10-10 cm3/s    Ga0.47In0.53 As; 300K  
Auger coefficient 7·10-29 cm6/s Ga0.47In0.53 As; 300K