Mobility and Hall Effect of Gallium Indium Arsenide (GaInAs)
Electrical properties
Basic ParametersMobility and Hall Effect
Twodimensional electron and hole gas mobility in heterostructures
Transport Properties in High Electric Fields
Impact Ionization
Recombination Parameters
Mobility and Hall Effect
Electron drift (dashed curves) and Hall (solid curves) mobility vs.
composition parameter x. T=300 K. 1, 1´ n=3·10^{15} cm^{3}; 2, 2´ n=4·10^{16} cm^{3}; 3 n=2.3·10^{17} cm^{3}. For curve 3 electron and drift mobility values are practically equal. Symbols are experimental data from several different papers. Chattopadhyay et al. (1981) 
For weakly n doped Ga_{x}In_{1x}As at 300 K
µ_{n}=(4080.7x+49.2x^{2}) cm^{2}/V·sElectron Hall mobility versus temperature for Ga_{0.47}In_{0.53}As. 300K Electron concentration n_{o}=3.5·10^{14} cm^{3} at 300K. Oliver, Jr. et al. (1981) 

Electron Hall mobility in Ga_{0.47}In_{0.53}As at 77 K for different compensation ratios:
θ=(Nd + Na )/n. 1  θ=1, 2  θ=2, 3  θ=5, 4  θ=10. Symbols represent the experimental data from several works Pearsall (1982) 

Electron Hall mobility in Ga_{0.47}In_{0.53}As at 300 K for different compensation ratios:
θ=(Nd + Na )/n. 1  θ=1, 2  θ=2, 3  θ=5, 4  θ=10. Symbols represent the experimental data from several works Pearsall (1982) 

Hall factor for ntype Ga_{0.47}In_{0.53}As (y=1) versus temperature. 1  n_{o}=10^{15} cm^{3}, 2  n_{o}=10^{17} cm^{3}. Pearsall (1982) 
For weakly doped pGa_{x}In_{1x}As at T=300 K.
µ_{p}≤500  InAs; x=0  µ_{p}≤500 
µ_{p}≤300  Ga_{0.47}In_{0.53}As; x=0.47  µ_{p}≤300 
µ_{p}≤400  GaAs; x=1  µ_{p}≤400 
Hole Hall mobility versus temperature for ntype Ga_{0.47}In_{0.53}As. Hole concentration p_{o}=5.5·10^{15} cm^{3} at T=300 K. Novak et al. (1989) 

Hole Hall mobility in Ga_{0.47}In_{0.53}As at t=77 K versus total impurity concentration Nd + Na. Pearsall and Hirtz (1981) 

Hole Hall mobility in Ga_{0.47}In_{0.53}As at t=295 K versus total impurity concentration Nd + Na. Pearsall and Hirtz (1981) 
Twodimensional electron and hole gas mobility in heterostructures
Temperature dependence of the electron mobility µ_{n} (1) and sheet electron density n_{2DEG} (2) in
Ga_{0.47}In_{0.53}As/Al_{0.48}In_{0.52}As heterostructure. Doping density in AlInAs layer is equal to 3·10^{17} cm^{3}. T=300 K. Matsuoka et al. (1990) 

Hall electron mobilities of pseudomorphic Ga_{x}In_{1x}As/Al_{0.48}In_{0.52}As
MODFET versus indium content at two temperature. 1  77 K 2  300 K Pamulapati et al. (1990) 
Measured Hall data from stress compensated Ga_{x}In_{1x}As/Al_{0.48}In_{0.52}As modulationdoped heterostructures
(Chin and Chang (1990))
µ_{n} cm^{2}/Vs  2DEG density, cm^{2}  
x  300 K  77 K  300 K  77 K 
0.25  14100  113000  1.71·10^{12}  1.65·10^{12} 
0.20  15200  123100  1.84·10^{12}  1.81·10^{12} 
0.15  15300  70700  1.84·10^{12}  1.81·10^{12} 
Electron mobility versus 2D carrier density at 300K for pseudomorphic HEMT structures AlGaAs/Ga_{x}In_{1x}As/(Al)GaAs. H homogeneously doped structures, P planar doped structures. For H115, H215, P15 and 2P15 samples x = 0.15. For P25 and 2P25 x=0.25 Gaonach et al. (1990) 
2DEG concentration and electron mobility of multiple (samples A,B, and C) and single (sample D) δdoped GaAs/Ga_{0.75}In_{0.25}As/GaAs structures (Shieh et al. (1994)).
n_{2DEG} (10^{12} cm^{2})  µ_{n} (cm^{2}/V·s)  
300 K  77 K  300 K  77 K  
Sample A  4.3  2.5  3910  18400 
Sample B  8.8  6.0  2710  6540 
Sample C  6.2  4.1  4630  19100 
Sample D  2.0  1.8  5600  22000 
Hole Hall mobility (1) and 2DHG density (2) versus temperature for single strained GaAs/Ga_{0.8}In_{0.2}As/GaAs quantum well structure. Fritz et al. (1986) 

Hole Hall mobility at 76 K versus 2D carrier density for 90 A thick GaAs/Ga_{0.8}In_{0.2}As/GaAs single strained quantum well. Fritz et al. (1986) 