Impact Ionization of Gallium Indium Arsenide (GaInAs)

GaInAs - Gallium Indium Arsenide

Electrical properties

Basic Parameters
Mobility and Hall Effect
Two-dimensional electron and hole gas mobility in heterostructures
Transport Properties in High Electric Fields
Impact Ionization
Recombination Parameters

Impact Ionization

Electron αi and hole βi ionization coefficients in Ga0.47In0.53As versus 1/F.
Osaka et al. (1985)
Electron αi and hole βi ionization Ga0.8In0.2As - GaAs strained layer superlattice versus 1/F.
Bhattacharya et al. (1986)
Avalanche breakdown voltages for Ga0.47In0.53As (curve 1) and InP (curve 2) p+ -n abrupt junctions versus carrier concentration.
Arnold et al. (1984)