Transport Properties in High Electric Fields of Gallium Indium Arsenide (GaInAs)
Electrical properties
Basic ParametersMobility and Hall Effect
Two-dimensional electron and hole gas mobility in heterostructures
Transport Properties in High Electric Fields
Impact Ionization
Recombination Parameters
Transport Properties in High Electric Fields
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Field dependence of the electron drift velocity for Ga0.47In0.53As. T=300 K. Solid line represents Monte Carlo calculation. Points and triangles are experimental data for two samples. Points: no=2.9·1015 cm-3, µo=8500 cm2/Vs. Triangles: no=9µ1014 cm-3, µo=10000 cm2/Vs. Balynas et al. (1990) |
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Field dependence of the electron drift velocity. T=300 K. Curve 1 - x=0.47 (unstrained) Curve 2 - x=0.22 (strained) Curve 2 - x=0.22 (unstrained). Thobel et al. (1990) |
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Field dependence of the electron drift velocity for Ga0.47In0.53As. T=300 K. Electron concentration no(cm-3): 1 - 1015, 2 - 1017, 3 - 1018. Haase et al. (1985) |
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Electron saturation velocity versus temperature for Ga0.47In0.53As. Adachi (1992) |
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The field dependence of longitudinal (1) and transverse (2) diffusion coefficient for Ga0.47In0.53As. Bourel et al.(1991) |
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Calculated field dependence of the hole drift velocity for x=0.47 (curve 1) and x=1 (curve 2). T=300 K. Adachi (1992) |