Transport Properties in High Electric Fields of Gallium Indium Arsenide Phosphide (GaInAsP)

GaInAsP - Gallium Indium Arsenide Phosphide

Electrical properties

Basic Parameters
Mobility and Hall Effect
Transport Properties in High Electric Fields
Impact Ionization
Recombination Parameters

Transport Properties in High Electric Fields

Field dependences of the electron drift velocity for three GaInAsP composition alloys lattice-matched to InP. T=300 K.
y=0.42,
no=1015 cm-3.
(Galvanauskas et al. (1988)).
Field dependences of the electron drift velocity for three GaInAsP composition alloys lattice-matched to InP. T=300 K.
y=0.65,
no=8·1015 cm-3.
(Galvanauskas et al. (1988)).
Field dependences of the electron drift velocity for three GaInAsP composition alloys lattice-matched to InP. T=300 K.
y=0.8,
no=2.5·1014 cm-3.
(Galvanauskas et al. (1988)).
Field dependences of the electron drift velocity at high electric fields.
Ga0.2In0.8As0.44P0.56 (λg=1.2µm).
(Windhorn et al. (1982))..
Temperature dependence of the electron saturation velocity for three different composition alloys lattice-matched to InP.
1. - y=0,
2. - y=0.44,
3. - y=1.
(Adachi (1992)).
Composition dependence of the threshold electric field Eth for the GaxIn1-xAsyP1-y lattice-matched to InP. T=300 K.
Experimental data are taken from different papers.
(Adachi (1992)).