Electrical Properties of Gallium Indium Arsenide Phosphide (GaInAsP)

GaInAsP - Gallium Indium Arsenide Phosphide

Electrical properties

Basic Parameters
Mobility and Hall Effect
Transport Properties in High Electric Fields
Impact Ionization
Recombination Parameters

Basic Parameters for Ga0.47In0.53AsyP1-y

Breakdown field ≈(2÷5)·105 V/cm Ga0.47In0.53AsyP1-y; 300K
Mobility electrons ≤(5400-7750y+14400y2) cm2 V-1s-1  
Mobility holes ≤200-400y+500y2 cm2 V-1s-1  
Diffusion coefficient electrons ≤130-190y+360y2 cm2/s  
Diffusion coefficient holes ≤5-10y+12.5y2 cm2/s  
Electron thermal velocity (3.9+1.6y)·105 m/s  
Hole thermal velocity (1.7+0.3y)·105 m/s  
Ga0.47In0.53AsyP1-y; 300K