Integer quantum Hall effect
- Role of Si-doped Al0.3Ga0.7As layers in the high-frequency conductivity of GaAs/Al0.3Ga0.7As heterostructures under conditions of the quantum hall effect
I. L. Drichko, A. M. D
Semiconductors, 2004, Volume 38, Number 6, 07020711
- Nonlinearity of acoustic effects and high-frequency electrical conductivity in GaAs/AlGaAs heterostructures under conditions of the integer quantum Hall effect
I. L. Drichko, A. M. D
Semiconductors, 2000, Volume 34, Number 4, 04220428
- Scaling in the regime of the quantum Hall effect and hole localization in p-Ge/Ge1−xSix heterostructures
Yu. G. Arapov, N. A. Gorodilov, V. N. Neverov, G. I. Kharus and N. G. Shelushinina
Semiconductors, 1997, Volume 31, Number 3, 02220227