Quantum Hall Effect
- Interaction of charge carriers with the localized magnetic moments of manganese atoms in p-GaInAsSb/p-InAs:Mn heterostructures
T. S. Lagunova, T. I. Voronina, M. P. Mikhailova, K. D. Moiseev, E. Samokhin and Yu. P. Yakovlev
Semiconductors, 2003, Volume 37, Number 8, 08760883
- Evaluation of mobility gaps and density of localized hole states in p-Ge/Ge1−xSix heterostructures in the quantum Hall effect mode
Yu. G. Arapov, O. A. Kuznetsov, V. N. Neverov, G. I. Kharus, N. G. Shelushinina and M. V. Yakunin
Semiconductors, 2002, Volume 36, Number 5, 05190526
- Electrical Readout of the Local Nuclear Polarization in the Quantum Hall Effect: A Hyperfine Battery
A. Würtz, T. Müller, A. Lorke, D. Reuter, and A. D. Wieck
Phys. Rev. Lett. 95, 056802 (2005)