NSM Archive - Silicon Carbide (SiC) - Mobility and Hall Effect

SiC - Silicon Carbide

Mobility and Hall Effect

Mobility electrons μn   3C-SiC  900 cm2 V-1 s-1 300 K ; crystalline. Nelson et al. (1966)
  3C-SiC  380 cm2 V-1 s-1 300 K Nishino et al. (1983)
Mobility holes μp   3C-SiC  15...21 cm2 V-1 s-1 300 K Nishino et al. (1983)

For conductivity, carrier concentration and hall mobility in epitaxial layers on Si, see Temperature dependence

Mobilities in other polytypes are of the same order of magnitude, see Electron and hole mobility vs. temperature

The thermal conductivity of 6H-SiC see also Electron mobility vs. temperature

3C-SiC, epitaxial layer. Conductivity, Carrier concentration and Electron Hall mobility vs. temperature.
Sasaki et al.(1984)
3C-SiC. Electron Hall mobility vs. temperature for different doping levels and different levels of compensation.
1 - n0 ~= 1016 cm-3 at 300 K;
2 - n0 ~= 5 x 1016 cm-3 at 300 K;
3 - Nd ~= 1.8 x 1018 cm-3, Na~= 1.1 x 1018 cm-3;
4 - Nd ~= 3.9 x 1018 cm-3, Na~= 2.7 x 1018 cm-3;
5 - Nd ~= 6.5 x 1018 cm-3, Na~= 3.0 x 1018 cm-3;
6 - Nd ~= 8.0 x 1018 cm-3
7 - Nd ~= 1019 cm-3
Yamanaka et al. (1987b), Shinohara et al. (1988)..
3C-SiC, epitaxial layer. Electron Hall mobility of 3 expitaxial layers on Si vs. temperature.
Sasaki et al.(1984)
4H-SiC. Electron Hall mobility vs. temperature for different doping levels and different crystallographic orientations.
1 - high quality, unintentionally doped;
2 - Nd ~= 1.2 x 1017 cm-3, electric field E||c;
 3 - Nd ~= 1.2 x 1017 cm-3, electric field Ec.
Choyke & Pensl (1997), Shaffer et al. (1994)..
6H-SiC. Electron Hall mobility vs. temperature for different doping levels
1 - Nd ~= 1016 cm-3;
2 - Nd ~= 1.5 x 1017 cm-3;
3 - Nd ~= 3.0 x 1017 cm-3;
4 - Nd ~= 5.0 x 1017 cm-3;
5 - Nd ~= 1.2 x 1019 cm-3;
Mickevicius & Zhao (1998), Chen et al. (1996), Barrett & Campbell (1967).
6H-SiC, 15R-SiC. Electron Hall mobility vs. temperature.
Barrett & Campbell (1967)
6H-SiC. Electron Hall mobility vs. temperature for different crystallographic orientations.
1 - Nd ~= 1017 cm-3, electric field Ec;
2 - Nd ~= 1017 cm-3, electric field E||c;
Shaffer et al. (1994).
4H-SiC, 6H-SiC. Electron Hall mobility vs. donor density.
T= 300 K
Shaffer et al. (1994).
4H-SiC. Electron Hall factor vs. temperature.
Donor concentration Nd ~= (0.1-3) x 1016 cm-3.
( 5 samples)
Rutsch et al. (1998).
6H-SiC. Electron Hall factor vs. temperature.
Donor concentration Nd ~= (0.1-1) x 1016 cm-3.
( 2 samples)
Rutsch et al. (1998).
See also Chen et al. (1996) and Kinoshita et al. (1997).
3C-SiC. Hole Hall mobility vs. temperature for two different Doping levels.
Circles - Nd ~= 3.5 x 1018 cm-3, Na~= 5.5 x 1018 cm-3;
Triangles - Nd ~= 5.0 x 1018 cm-3, Na~= 2.0 x 1019 cm-3.
Yamanaka et al. (1987a).
6H-SiC. Hole Hall mobility vs. temperature for different doping levels.
1 - Nd ~= 0.7 x 1018 cm-3, Na~= 2.3 x 1018 cm-3;
2- Nd ~= 2.5 x 1018 cm-3, Na~= 5.5 x 1018 cm-3;
3- Nd ~= 0.9 x 1018 cm-3, Na~= 3.6 x 1018 cm-3;
4- Nd ~= 3.0 x 1018 cm-3, Na~= 1.2 x 1019 cm-3;
5- Nd ~= 1.4 x 1019 cm-3, Na~= 8.5 x 1019 cm-3;
6- Nd ~= 1.2 x 1018 cm-3, Na~= 3.6 x 1020 cm-3;
Van Daal et al. (1963).
4H-SiC, 6H-SiC. Hole Hall mobility vs. acceptor density.
T= 300 K
Shaffer et al. (1994).
6H-SiC. Thermal conductivity (c-axis) vs. temperature for two different samples
Slack (1964).