NSM Archive - Aluminium Nitride (AlN) -Basic Parameters
Basic Parameters
| Remarks | Referens | ||
| Crystal structure | Wurtzite | ||
| Group of symmetry | C46v-P63mc | ||
| Number of atoms in 1 cm3 | 9.58·1022 | ||
| Debye temperature | 1150 K | ||
| Melting point | 3273 K | MacChesney et al. (1970) | |
| Density | 3.255 g cm-3 3.23 g cm-3 |
X-ray |
Slack (1973) Goldberg (2001) |
| Dielectric constant (static) | 9.14 | 300 K, reflectivity | Collins et al. (1967) |
| 8.5 | 300 K | Goldberg (2001) | |
| Dielectric constant (high frequency) | 4.84 4.6 4.77 |
300 K, reflectivity 300 K |
Collins et al. (1967) Goldberg (2001) |
| Infrared refractive index | 2.1 - 2.2 | 300 K, Epitaxial films and monocrystals | Meng, (1994) |
| 1.9 - 2.1 | 300 K, Polycrystalline films | ||
| 1.8 - 1.9 | 300 K, Amorphous films | ||
| Effective electron mass me | 0.4 mo | 300 K | Xu and Ching (1993) |
| Effective hole masses (heavy) for kz direction mhz for kx direction mhx |
3.53 mo 10.42 mo |
300 K |
Suzuki & Uenoyama (1996) |
| Effective hole masses (light) for kz direction mlz for kx direction mlx |
3.53 mo 0.24 mo |
300 K |
|
| Effective hole masses (split-off band) for kz direction msoz for kx direction msox |
0.25mo 3.81mo |
300 K |
|
| Effective mass of density of state mv:
|