Reference for Aluminium Nitride (AlN)
References:
- Aita, C.R, Kubiak, C.J.G., Shih, F.Y.H. J. Appl. Phys. 66,
9 (1989), 4360-4367.
- Akasaki, I., Hashimoto, M., Infrared lattice vibration of vapour-grown
A1N. Sol. State Commun. 5, 11 (1967), 851-853.
- Boguslawski, P., Briggs, E.L., Bernholc, Amphoteric properties of substitutional
carbon impurity in GaN and AlN.
J. Appl. Phys. Lett. 69, 2 (1996), 233-235.
- Carlone, C, Lakin, K.M., Shanks, H.R., J. Appl. Phys. 55
(1984) 4010.
- Chin, V.W.L., Tansley, T.L., Osotchan, T., Electron mobilities in gallium,
indium, and aluminum nitrides.
J. Appl. Phys. 75, 11 (1994), 7365-7372
- Chow, T.P, Ghezzo. SiC power devices. in III-Nitride, SiC, and Diamond
Materials for Electronic Devices. Eds. Gaskill D.K, Brandt C.D.
and Nemanich R.J., Material Research Society Symposium Proceedings,
Pittsburgh, PA. 423 (1996), 69-73.
- Chu, T.L, Ing, D.W., Noreika, A.J. Sol. State Electron. 10,
10 (1967), 1023-1027.
- Collins, A.T, Lightowlers, E.C., Dean, P.J. Phys Rev. 158,
3 (1967), 833-838.
- Demiryont, H, Thompson, L.R., Collins, G.J. Appl. Optics 25,
8 (1986), 1311-1318
- Dmitriev, A.V, Oruzheinikov, A.L. Radiative recombination rates in GaN,
InN, AlN and their solid solutions.. in III-Nitride, SiC, and Diamond
Materials for Electronic Devices. Eds. Gaskill D.K, Brandt C.D.
and Nemanich R.J., Material Research Society Symposium Proceedings,
Pittsburgh, PA. 423 (1996), 69-73.
- Edwards, J., Kawabe K., Stevens G., Tredgold R.H., Sol. State Commun.
3 (1965); 99-100.
- Francis, R.W., Worrell W.L., J. Electrochem. Soc. 123, 3
(1976), 430-433.
- Geidur, S.A, Yaskov A.D., Opt. Spectrosc. 48, 6 (1980),
618-622.
- Gerlich, D, Dole S.L., Slack G.A., J. Phys. Chem. Solids 47,
5 (1986), 437-441.
- Christensen, N.E., Gorczyca I.,Optical and structural properties of III-V
nitrides under pressure. Phys.
Rev. B 50 (1994), 4397-4415.
- Goldberg Yu. in Properties of Advanced SemiconductorMaterials GaN, AlN,
InN, BN, SiC, SiGe . Eds. Levinshtein M.E., Rumyantsev S.L.,
Shur M.S., John Wiley & Sons, Inc., New York, 2001, 31-47.
- Gorczyca, I., Christensen N.E., Phys. B 185 (1993), 410-414.
Gorczyca, I., Svane A., Christensen N.E., Internet J. Nitride Sem. Res.
2, Article 18 (1997).
- Gorczyca, I., Svane A., Christensen N.E., Internet J. Nitride Sem.
Res. 2, Article 18 (1997).
- Guo, Q, Yoshida A., Jpn. J. Appl. Phys. 33, part 1, 5A
(1994), 2453-2456.
- Huang, M.Z., Ching, W.Y., J. Phys. Chem. Solids 46 (1985)
977.
- Iwama, S., Hayakawa, K., Arizumi, T., J. Cryst. Growth 56
(1982) 265.
- Jenkins, D.W., Dow J.D., Electronic structures and doping of InN, InxGa1-xN,
and InxAl1-xN.
Phys Rev. B 39, 5 (1989), 3317-3329.
- King, S.W, Benjamin M.C., Nemanich R.J., Davis R.F., Lambrecht W.R.L.,
in Gallium Nitride and Related Materials. Eds. Ponce F.A,
Dupuis R.D., Nakamura S. and Edmond J.A., Material Research Society Symposium
Proceedings, Pittsburgh, PA 395 (1996), 375-380.
- Kobayashi, A., Sankey, O.F., Volz, S.M., Dow, J.D., Semiempirical tight-binding
band structures of wurtzite semiconductors: AlN, CdS, CdSe, ZnS, and ZnO.
Phys. Rev.
B28 (1983) 935.
- Koshchenko, V.I., Grinberg Ya.Kh., Demidenko A.F., Inora. Mater.
20, 11 (1984), 1550-1553.
- Levinshtein, M.E., S.L. Rumyantsev, and M.S. Shur (eds.), Properties
of Advanced SemiconductorMaterials GaN, AlN, InN, BN, SiC, SiGe, John
Wiley & Sons, Inc., New York, 2001, p.194.
- Loughin, S., French R.H., in Properties of Group III Nitrides.
Ed. Edgar J.H., EMIS Datareviews Series N11(1994) an INSPEC
publication, 175-188.
- MacChesney, J.B., Bridenbaugh, P.M., O'Connor, P.B. Mater. Res. Bull.
5 (1970) 783.
- MacMillan, M.F, Devaty, R.P. Choyke, W.J., Infrared reflectance of thin
aluminum nitride films on various substrates.
Appl. Phys. Lett. 62, 7 (1993), 750-752.
- Madelung, O. (ed.), Semiconductor: group IV elements and III-V compound.
Series "Data in science and technology", Ed. R.Poerschke, Shpringer
-Verlag , Berlin,1991, p.164.
- Martin, G., Botchkarev A., Rockett A., Morkoc H., Valence-band discontinuities
of wurtzite GaN, AlN, and InN heterojunctions measured by x-ray photoemission
spectroscopy.
Appl. Phys. Lett. 68, 18 (1996), 2541-2543.
- Meng, W.J., in Properties of Group III Nitrides. Ed.
Edgar J.H., EMIS Datareviews Series, N11(1994) an INSPEC publication,
22-29.
- McNeil, L.E, Grimsditch M., French R.H., J. Am. Ceram. Soc.
76, 5 (1993), 1132-1136.
- Mohammad, S.N., Salvador A.A., Morkoc H., Proc. IEEE, 83,
10 (1995), 1306-1355.
- Mohammad S.N. and H.Morkoc, Prog. Quant. Electron. 20 (1996)
361.
- Morkoc, H., Strite S., Gao G.B., Lin M.E., Sverdlov B., Burns M., Large-band-gap
SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies.
J. App. Phys. 76, 3 (1994), 1363-1398.
- Qian W. , Skowronski M., Rohrer G.R.Structural defects and their relationship
to nucleation of GaN thin films. in III-Nitride, SiC, and Diamond Materials
for Electronic Devices. Eds. Gaskill D.K, Brandt C.D. and Nemanich
R.J., Material Research Society Symposium Proceedings, Pittsburgh,
PA. 423 (1996), 475-486.
- Perlin, P., Polian A., Suski T., Raman-scattering studies of aluminum nitride
at high pressure.
Phys Rev. B 47, 5 (1993), 2874-2877.
- Perry, P.B, Rutz R.F., Appl. Phys. Lett. 33, 4 (1978),
319-321.
- Roskovcova, L., Pastrnak, J., Czech. J. Phys. B 30 (1980)
586.
- Sanjurjo, J.A, Lopez-Cruz, E., Vogi, P., Cardona, M., Dependence on volume
of the phonon frequencies and the ir effective charges of several III-V semiconductors.
Phys. Rev.
B28 (1983) 4579.
- Sirota, N.N., Golodushko, V.Z., Tezisy Dokl., Vses Konf. Khi., Svyazi
Poluprovdn. Polumetallakh 5th (1974) 98.
- Shur M.S. and M.A. Khan, Mat. Res. Bull. 22, 2 (1997) 44.
- Slack, G.A., J. Phys. Chem. Solids 34 (1973) 321.
- Slack, G.A., Bartram S.F., J. Appl. Phys. 46, 1 (1975),
89-98.
- Slack, G.A., Tanzilli R.A., Pohl R.O., Vandersande J.W., J. Phys. Chem.
Solids 48, 7 (1987), 641-647.
- Suzuki, M., Uenoyama T., Strain effect on electronic and optical properties
of GaN/AlGaN quantum-well lasers.
J. Appl. Phys. 80, 12 (1996), 6868-6874.
- Tansley, T.L., Egan R.J., Point-defect energies in the nitrides of aluminum,
gallium, and indium.
Phys. Rev. B 45, 19 (1992), 10942-10950.
- Teisseyre H., Perlin P., Suski T., Grzegory I., Porowski S., Jun J., Pietraszko
A., Moustakas T.D. Temperature dependence of the energy gap in GaN bulk single
crystals and epitaxial layer.
J. Appl. Phys. 76, 4 (1994) 2429-2434.
- Thokala, R, Chaudhuri J., Thin Solid Films 266, 2 (1995),
189-191
- Touloukian, Y.S, Kirby R.K., Taylor R.E., Lee T.Y.R. (Eds.) Thermophysical
Properties of Matter, 13 Plenum Press, New York, 1977.
- Van Camp, P.E, Van Doren V.E., Devreese J.T., High-pressure properties
of wurtzite- and rocksalt-type aluminum nitride. Phys
Rev. B
44, 16 (1991), 9056-9059.
- Walker, D., X. Zhang, Saxler A., Kung P., Xu J., Razeghi M., AlxGa1
- xN ( 0 ≤ x ≤ 1 ) ultraviolet photodetectors grown on sapphire
by metal-organic chemical-vapor deposition.
Appl. Phys. Lett, 70, 8 (1997), 949-951.
- Wongchotiqul, K., Chen N., Zhang D.P., Tang X., Spencer M.G., in Gallium
Nitride and Related Materials. Eds. Ponce F.A., Dupuis R.D.,
Nakamura S. and Edmond J.A., H12 Material Research Society Symposium Proceedings,
395 (1996), 279-282.
- Wright, A.F., Elastic properties of zinc-blende and wurtzite AlN, GaN,
and InN.
J. Appl. Phys. 82, 6 (1997), 2833-2839.
- Xinjiao, Li, Xu Zechuan, He Ziyou, Cao H'uazhe, Su Wuda, Chen Zhongcai,
Zhou Feng, Wang Enguang, Thin Solid Films 139, 3 (1986),
261-274.
- Xu, Y.N, Ching W.Y., Electronic, optical, and structural properties of
some wurtzite crystals.
Phys Rev. B 48, 7 (1993), 4335-4351.
- Yamashita, H, Fukui, K., Misawa, S., Yoshida, S., J. Appl. Phys.
50 (1979) 896.
- Zarwasch, R., Rille E., Pulker H.K., Fundamental optical absorption edge
of reactively direct current magnetron sputter-deposited AlN thin films.
J. Appl. Phys. 71, 10 (1992), 5275-5277.
- Gallium, Aluminum and Indium Nitrides. 4th International Workshop" September
18-19, 2000 St Petersburg, Russia.
Abs., Proc.(pdf
2.1MB, in russian)