Nonradiative recombination
- Double occupancy errors in quantum computing operations: Corrections to adiabaticity
Ryan Requist, John Schliemann, Alexander G. Abanov, and Daniel Loss
Phys. Rev. B 71, 115315 (2005)
- Impact of carrier redistribution on the photoluminescence of CdTe self-assembled quantum dot ensembles
S. Mackowski, G. Prechtl, W. Heiss, F. V. Kyrychenko, G. Karczewski, and J. Kossut
Phys. Rev. B 69, 205325 (2004)
- Multiexcitons confined within a subexcitonic volume: Spectroscopic and dynamical signatures of neutral and charged biexcitons in ultrasmall semiconductor nanocrystals
M. Achermann, J. A. Hollingsworth, and V. I. Klimov
Phys. Rev. B 68, 245302 (2003)
- Defect states in red-emitting InxAl1
R. Leon, J. Ibáñez, S. Marcinkeviius, J. Siegert, T. Paskova, B. Monemar, S. Chaparro, C. Navarro, S. R. Johnson, and Y.-H. Zhang
Phys. Rev. B 66, 085331 (2002)
- Gain and threshold characteristics of long wavelength lasers based on InAs/GaAs quantum dots formed by activated alloy phase separation
M. V. Maximov, L. V. Asryan, Yu. M. Shernyakov, A. F. Tsatsul'nikov, I. N. Kaiander, V. V. Nikolaev, A. R. Kovsh, S. S. Mikhrin, V. M. Ustinov, A. E. Zhukov, Zh. I. Alferov, N. N. Ledenstov, and D. Bimberg
IEEE J. Quantum Electron., 37, 676 (2001)
- Performance and physics of quantum-dot lasers with self-assembled columnar-shaped and 1.3-μm emitting InGaAs quantum dots
Sugawara, M. Mukai, K. Nakata, Y. Otsubo, K. Ishilkawa, H.
IEEE J. Select. Topics Quantum Electron., 6, 462 (2000)
- Temperature dependence of lasing characteristics for long-wavelength (1.3-μm) GaAs-based quantum-dot lasers
Park, G. Huffaker, D.L. Zou, Z. Shchekin, O.B. Deppe, D.G.
IEEE J. Phot. Technol. Lett., 11, 303 (1999)
- Temperature characteristics of threshold currents of columnar-shaped self-assembled InGaAs/GaAs quantum-dot lasers: Influence of nonradiative recombination centers
Mitsuru Sugawara, Kohki Mukai, and Yoshiaki Nakata
Appl. Phys. Lett., 75, 656 (1999)
- Temperature dependence of the threshold current density of a quantum dot laser
L. V. Asryan and R. A. Suris
IEEE J. Quantum Electron., 34, 841 (1998)
- Injection lasers with vertically aligned InP/GaInP quantum dots: Dependence of the threshold current on temperature and dot size
T. Riedl, E. Fehrenbacher, A. Hangleiter, M. K. Zundel and K. Eberl
Appl. Phys. Lett., 73, 3730 (1998)
- Influence of GaAs capping on the optical properties of InGaAs/GaAs surface quantum dots with 1.5
Hideaki Saito, Kenichi Nishi, and Shigeo Sugou
Appl. Phys. Lett., 73, 2742 (1998)
- Charge neutrality violation in quantum dot lasers
L. V. Asryan and R. A. Suris
IEEE J. Select. Topics Quantum Electron., 3, 148 (1997)
- Gain and the threshold of three-dimensional quantum-box lasers
Asada, M. Miyamoto, Y. Suematsu, Y.
IEEE J. Quantum Electron., 22, 1915 (1986)