Strained Quantum Dots
- Determination of the composition and strains in GexSi1− x -based nanostructures from Raman spectroscopy data with consideration of the contribution of the heterointerface
V. A. Volodin, M. D. Efremov, A. I. Yakimov, G. Yu. Mikhalev, A. I. Nikiforov and A. V. Dvurechenskiĭ
Semiconductors, 2007, Volume 41, Number 8, 09300934
- GaAs in GaSb: Strained nanostructures for mid-infrared optoelectronics
V. A. Solov
Semiconductors, 2002, Volume 36, Number 7, 08160820
- InGaAs/InP heterostructures with strained quantum wells and quantum dots (λ=1.5
Z. N. Sokolova, D. A. Vinokurov, I. S. Tarasov, N. A. Gun
Semiconductors, 1999, Volume 33, Number 9, 10071009
- Efficient Single Photon Detection by Quantum Dot Resonant Tunneling Diodes
J. C. Blakesley, P. See, A. J. Shields, B. E. Kardynal, P. Atkinson, I. Farrer, and D. A. Ritchie
Phys. Rev. Lett. 94, 067401 (2005)
- Derivation of built-in polarization potentials in nitride-based semiconductor quantum dots
D. P. Williams, A. D. Andreev, E. P. O\'Reilly, and D. A. Faux
Phys. Rev. B 72, 235318 (2005)
- Band-edge diagrams for strained III
C. E. Pryor, M.-E. Pistol
Phys. Rev. B 72, 205311 (2005)
- Size dependency of strain in arbitrary shaped anisotropic embedded quantum dots due to nonlocal dispersive effects
X. Zhang and P. Sharma
Phys. Rev. B 72, 195345 (2005)
- Singlet-triplet splitting, correlation, and entanglement of two electrons in quantum dot molecules
Lixin He, Gabriel Bester, and Alex Zunger
Phys. Rev. B 72, 195307 (2005)
- Tight-binding model for semiconductor nanostructures
S. Schulz and G. Czycholl
Phys. Rev. B 72, 165317 (2005)
- Deformation profile in GaN quantum dots: Medium-energy ion scattering experiments and theoretical calculations
D. Jalabert, J. Coraux, H. Renevier, B. Daudin, M.-H. Cho, K. B. Chung, D. W. Moon, J. M. Llorens, N. Garro, A. Cros, and A. García-Cristóbal
Phys. Rev. B 72, 115301 (2005)
- Shape, strain, and ordering of lateral InAs quantum dot molecules
B. Krause, T. H. Metzger, A. Rastelli, R. Songmuang, S. Kiravittaya, and O. G. Schmidt
Phys. Rev. B 72, 085339 (2005)
- Strain effects on individual quantum dots: Dependence of cap layer thickness
J. Persson, U. Håkanson, M. K.-J. Johansson, L. Samuelson, and M.-E. Pistol
Phys. Rev. B 72, 085302 (2005)
- Electronic asymmetry in self-assembled quantum dot molecules made of identical InAs∕GaAs quantum dots
Lixin He, Gabriel Bester, and Alex Zunger
Phys. Rev. B 72, 081311 (2005)
- Mapping quantum dot-in-well structures on the nanoscale using the plasmon peak in electron energy loss spectra
A. M. Sánchez, R. Beanland, M. H. Gass, A. J. Papworth, P. J. Goodhew, and M. Hopkinson
Phys. Rev. B 72, 075339 (2005)
- Short-range order structures of self-assembled Ge quantum dots probed by multiple-scattering extended x-ray absorption fine structure
Zhihu Sun, Shiqiang Wei, A. V. Kolobov, H. Oyanagi, and K. Brunner
Phys. Rev. B 71, 245334 (2005)
- Effects of strain and confinement on the emission wavelength of InAs quantum dots due to a GaAs1−xNx capping layer
O. Schumann, S. Birner, M. Baudach, L. Geelhaar, H. Eisele, L. Ivanova, R. Timm, A. Lenz, S. K. Becker, M. Povolotskyi, M. Dähne, G. Abstreiter, and H. Riechert
Phys. Rev. B 71, 245316 (2005)
- Tuning of g -factor in self-assembled In(Ga)As quantum dots through strain engineering
T. Nakaoka, T. Saito, J. Tatebayashi, S. Hirose, T. Usuki, N. Yokoyama, and Y. Arakawa
Phys. Rev. B 71, 205301 (2005)
- Reversed quantum-confined Stark effect and an asymmetric band alignment observed for type-II Si/Ge quantum dots
M. Larsson, P. O. Holtz, A. Elfving, G. V. Hansson, and W.-X. Ni
Phys. Rev. B 71, 113301 (2005)
- Hole spin relaxation in semiconductor quantum dots
C. Lü, J. L. Cheng, and M. W. Wu
Phys. Rev. B 71, 075308 (2005)
- Strain-Induced Quantum Ring Hole States in a Gated Vertical Quantum Dot
Jun Liu, A. Zaslavsky, and L. B. Freund
Phys. Rev. Lett. 89, 096804 (2002)
- Single-hole tunneling into a strain-induced SiGe quantum ring
Jun Liu, A. Zaslavsky, B. R. Perkins, C. Aydin, and L. B. Freund
Phys. Rev. B 66, 161304(R) (2002)
- Optical properties of bilayer InAs/GaAs quantum dot structures: Influence of strain and surface morphology
P. B. Joyce, E. C. Le Ru, T. J. Krzyzewski, G. R. Bell, R. Murray and T. S. Jones
Phys. Rev. B 66, 075316 (2002)
- Effect of isotropic versus anisotropic elasticity on the electronic structure of cylindrical InP/In0.49Ga0.51P self-assembled quantum dots
M. Tadi, F. M. Peeters, and K. L. Janssens
Phys. Rev. B 65, 165333 (2002)
- Self-consistent simulations of a four-gated vertical quantum dot
Philippe Matagne and Jean-Pierre Leburton
Phys. Rev. B 65, 155311 (2002)
- Self-Assembled Quantum Dots: Crossover from Kinetically Controlled to Thermodynamically Limited Growth
M. Meixner, E. Schöll, V. A. Shchukin and D. Bimberg
Phys. Rev. Lett. 87, 236101 (2001)
- Critical coverage for strain-induced formation of InAs quantum dots
Ch. Heyn
Phys. Rev. B 64, 165306 (2001)
- Electronic structure consequences of In/Ga composition variations in self-assembled InxGa1
J. Shumway, A. J. Williamson, Alex Zunger, A. Passaseo, M. DeGiorgi, R. Cingolani, M. Catalano and P. Crozier
Phys. Rev. B 64, 125302 (2001)
- Tunneling of zero-dimensional excitons in a single pair of correlated quantum dots
J. Seufert, M. Obert, G. Bacher, A. Forchel, T. Passow, K. Leonardi, and D. Hommel
Phys. Rev. B 64, 121303 (2001)
- Strain engineering of self-organized InAs quantum dots
F. Guffarth, R. Heitz, A. Schliwa, O. Stier, N. N. Ledentsov, A. R. Kovsh, V. M. Ustinov, and D. Bimberg
Phys. Rev. B 64, 085305 (2001)
- Spatial carrier-carrier correlations in strain-induced quantum dots
M. Braskén, M. Lindberg, D. Sundholm and J. Olsen
Phys. Rev. B 64, 035312 (2001)
- Electron-hole alignment in InAs/GaAs self-assembled quantum dots: Effects of chemical composition and dot shape
Weidong Sheng and Jean-Pierre Leburton
Phys. Rev. B 63, 161301 (2001)
- Determination of strain fields and composition of self-organized quantum dots using x-ray diffraction
I. Kegel, T. H. Metzger, A. Lorke, J. Peisl, J. Stangl, G. Bauer, K. Nordlund, W. V. Schoenfeld and P. M. Petroff
Phys. Rev. B 63, 035318 (2001)
- Piezoelectric potentials and carrier lifetimes in strain-induced quantum well dots
R. Virkkala, K. Maijala, and J. Tulkki
Phys. Rev. B 62, 6932 (2000)
- Electron-Hole Correlation in Quantum Dots under a High Magnetic Field (up to 45 T)
R. Cingolani, R. Rinaldi, H. Lipsanen, M. Sopanen, R. Virkkala, K. Maijala, J. Tulkki, J. Ahopelto, K. Uchida, N. Miura and Y. Arakawa
Phys. Rev. Lett. 83, 4832 (1999)
- Strain Induced Vertical and Lateral Correlations in Quantum Dot Superlattices
V. Holý, G. Springholz, M. Pinczolits, and G. Bauer
Phys. Rev. Lett. 83, 356 (1999)
- Excited states and selection rules in self-assembled InAs/GaAs quantum dots
I. E. Itskevich, M. S. Skolnick, D. J. Mowbray, I. A. Trojan. S. G. Lyapin, L. R. Wilson, M. J. Steer, M. Hopkinson, L. Eaves and P. C. Main
Phys. Rev. B 60, R2185 (1999)
- Electronic and optical properties of strained quantum dots modeled by 8-band k
O. Stier, M. Grundmann, and D. Bimberg
Phys. Rev. B 59, 5688 (1999)
- Gain and linewidth enhancement factor in InAs quantum-dot laser diodes
Newell, T.C. Bossert, D.J. Stintz, A. Fuchs, B. Malloy, K.J. Lester, L.F.
IEEE J. Phot. Technol. Lett., 11, 1527 (1999)
- Extremely low room-temperature threshold current density diode lasers using InAs dots in In0.15Ga0.85As quantum well
Liu, G. Stintz, A. Li, H. Malloy, K.J. Lester, L.F.
Electron. Lett., 35, 1163 (1999)
- Quantum Wires Formed from Coupled InAs/GaAs Strained Quantum Dots
Craig Pryor
Phys. Rev. Lett. 80, 3579 (1998)
- Strain-Induced Quenching of Optical Transitions in Capped Self-Assembled Quantum Dot Structures
J. A. Prieto, G. Armelles, T. Utzmeier, F. Briones, J. C. Ferrer, F. Peiró, A. Cornet, and J. R. Morante
Phys. Rev. Lett. 80, 1094 (1998)
- Energy levels in self-assembled InAs/GaAs quantum dots above the pressure-induced Gamma -X crossover
I. E. Itskevich, S. G. Lyapin, I. A. Troyan, P. C. Klipstein, L. Eaves, P. C. Main, and M. Henini
Phys. Rev. B 58, R4250 (1998)
- Raman study of interface modes subjected to strain in InAs/GaAs self-assembled quantum dots
Yu. A. Pusep, G. Zanelatto, S. W. da Silva, J. C. Galzerani, P. P. Gonzalez-Borrero, A. I. Toropov and P. Basmaji
Phys. Rev. B 58, R1770 (1998)
- Temperature dependence of carrier relaxation in strain-induced quantum dots
M. Braskén, M. Lindberg, M. Sopanen, H. Lipsanen and J. Tulkki
Phys. Rev. B 58, R15993 (1998)
- Coplanar and grazing incidence x-ray-diffraction investigation of self-organized SiGe quantum dot multilayers
V. Holý, A. A. Darhuber, J. Stangl, S. Zerlauth, F. Schäffler, G. Bauer, N. Darowski, D. Lübbert, U. Pietsch and I. Vávra
Phys. Rev. B 58, 7934 (1998)
- Effect of interfacial states on the binding energies of electrons and holes in InAs/GaAs quantum dots
A. J. Williamson and Alex Zunger
Phys. Rev. B 58, 6724 (1998)
- Elastic relaxation of dry-etched Si/SiGe quantum dots
A. A. Darhuber, T. Grill, J. Stangl, G. Bauer, D. J. Lockwood, J.-P. Noël, P. D. Wang and C. M. Sotomayor Torres
Phys. Rev. B 58, 4825 (1998)
- Influence of surface stress on the equilibrium shape of strained quantum dots
N. Moll, M. Scheffler and E. Pehlke
Phys. Rev. B 58, 4566 (1998)
- Electronic states in strained cleaved-edge-overgrowth quantum wires and quantum dots
M. Grundmann, O. Stier, and D. Bimberg
Phys. Rev. B 58, 10557 (1998)
- Prediction of a strain-induced conduction-band minimum in embedded quantum dots
A. J. Williamson, Alex Zunger and A. Canning
Phys. Rev. B 57, R4253 (1998)
- Optical properties of Ge self-organized quantum dots in Si
C. S. Peng*, Q. Huang, W. Q. Cheng, J. M. Zhou, Y. H. Zhang, T. T. Sheng and C. H. Tung
Phys. Rev. B 57, 8805 (1998)
- Eight-band calculations of strained InAs/GaAs quantum dots compared with one-, four-, and six-band approximations
Craig Pryor
Phys. Rev. B 57, 7190 (1998)
- Inhomogeneous strain relaxation in etched quantum dots and wires: From strain distributions to piezoelectric fields and band-edge profiles
Y. M. Niquet, C. Priester, C. Gourgon and H. Mariette
Phys. Rev. B 57, 14850 (1998)
- Strain-energy distribution and electronic structure of InAs pyramidal quantum dots with uncovered surfaces: Tight-binding analysis
T. Saito, J. N. Schulman, and Y. Arakawa
Phys. Rev. B 57, 13016 (1998)
- Strain distribution and electronic spectra of InAs/GaAs self-assembled dots: An eight-band study
Hongtao Jiang and Jasprit Singh
Phys. Rev. B 56, 4696 (1997)
- Electronic structure of strained InP/Ga0.51In0.49P quantum dots
Craig Pryor, M-E. Pistol, and L. Samuelson
Phys. Rev. B 56, 10404 (1997)
- Self-Organization in Growth of Quantum Dot Superlattices
J. Tersoff, C. Teichert and M. G. Lagally
Phys. Rev. Lett. 76, 1675 (1996)
- Electronic structure of InAs/GaAs self-assembled quantum dots
M. A. Cusack, P. R. Briddon, and M. Jaros
Phys. Rev. B 54, R2300 (1996)
- Near-field optical spectroscopy of localized excitons in strained CdSe quantum dots
F. Flack, N. Samarth, V. Nikitin, P. A. Crowell, J. Shi, J. Levy, and D. D. Awschalom
Phys. Rev. B 54, R17312 (1996)
- Direct formation of vertically coupled quantum dots in Stranski-Krastanow growth
N. N. Ledentsov, V. A. Shchukin, M. Grundmann, N. Kirstaedter, J. Böhrer, O. Schmidt, D. Bimberg, V. M. Ustinov, A. Yu. Egorov, A. E. Zhukov, P. S. Kop
Phys. Rev. B 54, 8743 (1996)
- Effective-mass theory for InAs/GaAs strained coupled quantum dots
Shu
Phys. Rev. B 54, 11575 (1996)
- Simulation model for self-ordering of strained islands in molecular-beam epitaxy
T. T. Ngo, T. T. Ngo, H. Sakaki and J. L. Merz
Phys. Rev. B 53, 9618 (1996)
- Slow relaxation of excited states in strain-induced quantum dots
T. H. Gfroerer, M. D. Sturge, K. Kash, J. A. Yater, A. S. Plaut, P. S. D. Lin, L. T. Florez, J. P. Harbison, S. R. Das and L. Lebrun
Phys. Rev. B 53, 16474 (1996)
- Electronic structure and energy relaxation in strained InAs/GaAs quantum pyramids
Grundmann M., Heitz R., Ledentsov N., Stier O., Bimberg D. Ustinov V. M., Kop'ev P. S., Alferov Zh. I., Ruvimov S. S., Werner P., Gösele U.Heydenreich J.
Superlatt. and Microstruct., 19, 81 (1995)
- Elastic strains in GaAs/AlAs quantum dots studied by high-resolution x-ray diffraction
V. Holý, A. A. Darhuber, G. Bauer, P. D. Wang, Y. P. Song, C. M. Sotomayor Torres, and M. C. Holland
Phys. Rev. B 52, 8348 (1995)
- InAs/GaAs pyramidal quantum dots: Strain distribution, optical phonons, and electronic structure
M. Grundmann, O. Stier, and D. Bimberg
Phys. Rev. B 52, 11969 (1995)
- Temperature dependence of luminescence efficiency, exciton transfer, and exciton localization in GaAs/AlxGa1-xAs quantum wires and quantum dots
Yong Zhang, M. D. Sturge, K. Kash, B. P. van der Gaag, A. S. Gozdz, L. T. Florez, and J. P. Harbison
Phys. Rev. B 51, 13303 (1995)
- State mixing in InAs/GaAs quantum dots at the pressure-induced Gamma -X crossing
G. H. Li, A. R. Goñi, K. Syassen, O. Brandt, and K. Ploog
Phys. Rev. B 50, 18420 (1994)
- Lasing action of Ga0.67In0.33As/GaInAsP/InP tensile-strained quantum-box laser
Hirayama, H. Matsunaga, K. Asada, M. Suematsu, Y.
Electron. Lett., 30, 142 (1994)
- Optical and structural properties of metalorganic-vapor-phase-epitaxy-grown InAs quantum wells and quantum dots in InP
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Phys. Rev. B 48, 11135 (1993)