1996 year
- New Concept for the Reduction of Impurity Scattering in Remotely Doped GaAs Quantum Wells
K.-J. Friedland, R. Hey, H. Kostial, R. Klann, and K. Ploog
Phys. Rev. Lett. 77, 4616 (1996)
- Terahertz Dynamics of Excitons in GaAs/AlGaAs Quantum Wells
J. Cerne, J. Kono, M. S. Sherwin, M. Sundaram, A. C. Gossard, and G. E. W. Bauer
Phys. Rev. Lett. 77, 1131 (1996)
- Binding of Quasi-Two-Dimensional Biexcitons
D. Birkedal, J. Singh, V. G. Lyssenko, J. Erland, and J. M. Hvam
Phys. Rev. Lett. 76, 672 (1996)
- Fermi Edge Singularities in Doped Quantum Wells with Strong In-Plane Type I Modulation
T. Mélin and F. Laruelle
Phys. Rev. Lett. 76, 4219 (1996)
- Spin splitting in a polarized quasi-two-dimensional exciton gas
L. Viña, L. Muñoz, E. Pérez, J. Fernández-Rossier and C. Tejedor
Phys. Rev. B 54, R8317 (1996)
- Interface-induced conversion of infrared to visible light at semiconductor interfaces
F. A. J. M. Driessen, H. M. Cheong, A. Mascarenhas, S. K. Deb, P. R. Hageman, G. J. Bauhuis, and L. J. Giling
Phys. Rev. B 54, R5263 (1996)
- Dielectric enhancement of excitons in near-surface quantum wells
L. V. Kulik, V. D. Kulakovskii, M. Bayer, A. Forchel, N. A. Gippius and S. G. Tikhodeev
Phys. Rev. B 54, R2335 (1996)
- Femtosecond luminescence measurements of the intersubband scattering rate in AlxGa1-xAs/GaAs quantum wells under selective excitation
M. Hartig, S. Haacke, B. Deveaud and L. Rota
Phys. Rev. B 54, R14269 (1996)
- Direct and indirect excitons in coupled GaAs/Al0.30Ga0.70As double quantum wells separated by AlAs barriers
M. Bayer, V. B. Timofeev, F. Faller, T. Gutbrod, and A. Forchel
Phys. Rev. B 54, 8799 (1996)
- Electron-assisted exciton transfer and long-lived electrons and holes in GaAs/AlxGa1-xAs quantum wells
B. M. Ashkinadze, E. Tsidilkovski, E. Linder, E. Cohen, Arza Ron and L. N. Pfeiffer
Phys. Rev. B 54, 8728 (1996)
- Type-II interface exciton in ZnSe/(Zn,Mn)Se heterostructures
V. V. Rossin, T. Böttger and F. Henneberger
Phys. Rev. B 54, 7682 (1996)
- Type-II interface exciton in ZnSe/(Zn,Mn)Se heterostructures
V. V. Rossin, T. Böttger and F. Henneberger
Phys. Rev. B 54, 7682 (1996)
- Analytic solutions for the valence subband mixing at the zone center of a GaAs/AlxGa1-xAs quantum well under uniaxial stress perpendicular to the growth direction
G. Rau, P. C. Klipstein, V. Nikos Nicopoulos, and N. F. Johnson
Phys. Rev. B 54, 5700 (1996)
- Picosecond time evolution of free electron-hole pairs into excitons in GaAs quantum wells
Rajesh Kumar, A. S. Vengurlekar, S. S. Prabhu, Jagdeep Shah and L. N. Pfeiffer
Phys. Rev. B 54, 4891 (1996)
- Effect of exciton-carrier thermodynamics on the GaAs quantum well photoluminescence
H. W. Yoon, D. R. Wake, and J. P. Wolfe
Phys. Rev. B 54, 2763 (1996)
- Optical observation of impurity localized states at the edges of Landau subbands in doped quantum wells
D. Gekhtman, J. A. Kash, E. Cohen and Arza Ron
Phys. Rev. B 54, 2756 (1996)
- Exciton localization, photoluminescence spectra, and interface roughness in thin quantum wells
U. Jahn, S. H. Kwok, M. Ramsteiner, R. Hey, H. T. Grahn and E. Runge
Phys. Rev. B 54, 2733 (1996)
- Recombination dynamics of localized excitons in a CdSe/ZnSe/ZnSxSe1-x single-quantum-well structure
Shigeo Yamaguchi, Yoichi Kawakami, Shizuo Fujita, Shigeo Fujita, Yoichi Yamada, Tomobumi Mishina, and Yasuaki Masumoto
Phys. Rev. B 54, 2629 (1996)
- Theory of unconfined excitons trapped by a quantum well
Guozhong Wen, Peiji Zhao, and Yia-chung Chang
Phys. Rev. B 54, 17779 (1996)
- Strong interaction of Fermi-edge singularity and exciton related to N=2 subband in a modulation-doped AlxGa1-xAs/InyGa1-yAs/GaAs quantum well
S. J. Xu, S. J. Chua, X. H. Tang, and X. H. Zhang
Phys. Rev. B 54, 17701 (1996)
- Center of mass quantization of excitons in Zn1-xCdxSe/ZnSe quantum-wells
D. Greco, R. Cingolani, A. D
Phys. Rev. B 54, 16998 (1996)
- Excitons bound at interacting acceptors in AlxGa1-xAs/GaAs quantum wells
A. C. Ferreira, P. O. Holtz, B. Monemar, M. Sundaram, K. Campman, J. L. Merz, and A. C. Gossard
Phys. Rev. B 54, 16994 (1996)
- Exciton properties in p-type GaAs/AlxGa1-xAs quantum wells in the high doping regime
A. C. Ferreira, P. O. Holtz, B. E. Sernelius, I. Buyanova, B. Monemar, O. Mauritz, U. Ekenberg, M. Sundaram, K. Campman, J. L. Merz, and A. C. Gossard
Phys. Rev. B 54, 16989 (1996)
- Electro-optic exciton nonlinearities in Zn1-xCdxSe/ZnSe multiple quantum wells
P. V. Giugno, M. De Vittorio, R. Rinaldi, R. Cingolani, F. Quaranta, L. Vanzetti, L. Sorba, and A. Franciosi
Phys. Rev. B 54, 16934 (1996)
- Two-dimensional excitonic emission in InAs submonolayers
Z. L. Yuan, Z. Y. Xu, B. Z. Zheng, J. Z. Xu, S. S. Li, Weikun Ge, Y. Wang, J. Wang, L. L. Chang, P. D. Wang, C. M. Sotomayor Torres and N. N. Ledentsov
Phys. Rev. B 54, 16919 (1996)
- Stokes shift in quantum wells: Trapping versus thermalization
A. Polimeni, A. Patanè, M. Grassi Alessi, M. Capizzi, F. Martelli, A. Bosacchi and S. Franchi
Phys. Rev. B 54, 16389 (1996)
- Percolation of carriers through low potential channels in thick AlxGa1-xAs (x<0.35) barriers
D. S. Kim, H. S. Ko, Y. M. Kim, S. J. Rhee, S. C. Hohng, Y. H. Yee, W. S. Kim, J. C. Woo, H. J. Choi, J. Ihm, D. H. Woo and K. N. Kang
Phys. Rev. B 54, 14580 (1996)
- Polariton effects in multiple-quantum-well structures of CdTe/Cd1-xZnxTe
Y. Merle d
Phys. Rev. B 54, 14003 (1996)
- Millikelvin magneto-optical studies of two-dimensional hole systems
Y. V. Ponomarev, A. Usher, P. J. Rodgers, B. L. Gallagher, M. Henini and G. Hill
Phys. Rev. B 54, 13891 (1996)
- High-pressure study of optical transitions in strained In0.2Ga0.8As/GaAs multiple quantum wells
G. H. Li, A. R. Goñi, K. Syassen, H. Q. Hou, W. Feng, and J. M. Zhou
Phys. Rev. B 54, 13820 (1996)
- Magneto-optical experiments on GaAs/InxGa1-xAs/AlyGa1-yAs modulation-doped single quantum wells
F. Iikawa, M. L. F. Abbade, and J. A. Brum, A. A. Bernussi, R. G. Pereira and G. Borghs
Phys. Rev. B 54, 11360 (1996)
- Electronic properties of the leaky quantum-well system Ag(111)/Au/Ag
W. E. McMahon, T. Miller, and T.
Phys. Rev. B 54, 10800 (1996)
- Effect of the spin split-off band on optical absorption in p-type Ga1-xInxAsyP1-y quantum-well infrared detectors
J. R. Hoff, M. Razeghi and Gail J. Brown
Phys. Rev. B 54, 10773 (1996)
- Electromagnetic properties of a dielectric grating. II. Quantum wells excited by surface waves
L. Pilozzi, A. D
Phys. Rev. B 54, 10763 (1996)
- Effect of strain on a second-order van Hove singularity in AlxGa1-xAs/InyGa1-yAs quantum wells
M. Kemerink, P. M. Koenraad, and J. H. Wolter
Phys. Rev. B 54, 10644 (1996)
- Exciton and trion spectral line shape in the presence of an electron gas in GaAs/AlAs quantum wells
A. Manassen, E. Cohen, Arza Ron, E. Linder and L. N. Pfeiffer
Phys. Rev. B 54, 10609 (1996)
- Charged and neutral exciton phase formation in the magnetically quantized two-dimensional electron gas
D. Gekhtman, E. Cohen, Arza Ron and L. N. Pfeiffer
Phys. Rev. B 54, 10320 (1996)
- Self-aggregation of quantum dots for very thin InAs layers grown on GaAs
A. Polimeni, A. Patanè, M. Capizzi, F. Martelli, L. Nasi and G. Salviati
Phys. Rev. B 53, R4213 (1996)
- Negatively and positively charged excitons in GaAs/AlxGa1-xAs quantum wells
Gleb Finkelstein, Hadas Shtrikman, and Israel Bar-Joseph
Phys. Rev. B 53, R1709 (1996)
- Fermi-edge singularity in p-type modulation-doped SiGe quantum wells
I. A. Buyanova, W. M. Chen, A. Henry, W. -X. Ni, G. V. Hansson, and B. Monemar
Phys. Rev. B 53, R1701 (1996)
- Temperature dependence of the photoluminescence of ZnSe/ZnS quantum-dot structures
Yi-hong Wu, Kenta Arai and Takafumi Yao
Phys. Rev. B 53, R10485 (1996)
- Band structure of holes in p-type delta -doping quantum wells and superlattices
G. M. Sipahi, R. Enderlein, L. M. R. Scolfaro, and J. R. Leite
Phys. Rev. B 53, 9930 (1996)
- Magnetic-field dependence of exciton spin relaxation in GaAs/AlxGa1-xAs quantum wells
R. T. Harley and M. J. Snelling
Phys. Rev. B 53, 9561 (1996)
- Quantum-well states in Cu/Co overlayers and sandwiches
P. van Gelderen, S. Crampin and J. E. Inglesfield
Phys. Rev. B 53, 9115 (1996)
- Reconstruction-dependent electron-hole recombination on GaAs(001) surfaces studied by using near-surface quantum wells
Hiroshi Yamaguchi, Kiyoshi Kanisawa, and Yoshiji Horikoshi
Phys. Rev. B 53, 7880 (1996)
- Exciton localization by potential fluctuations at the interface of InGaAs/GaAs quantum wells
F. Martelli,A. Polimeni, A. Patanè, M. Capizzi, P. Borri, M. Gurioli, M. Colocci, A. Bosacchi and S. Franchi
Phys. Rev. B 53, 7421 (1996)
- Time-resolved luminescence studies in an n-type Zn1-xCdxSe/ZnSySe1-y quantum well
K. Nakano, Y. Kishita, S. Itoh, M. Ikeda, A. Ishibashi and U. Strauss
Phys. Rev. B 53, 4722 (1996)
- Excitation-intensity-dependent photoluminescence in semiconductor quantum wells due to internal electric fields
A. Chtanov, T. Baars, and M. Gal
Phys. Rev. B 53, 4704 (1996)
- Recombination and thermal emission of excitons in shallow CdTe/Cd1-xMgxTe quantum wells
R. Spiegel, G. Bacher, K. Herz, A. Forchel, T. Litz, A. Waag, and G. Landwehr
Phys. Rev. B 53, 4544 (1996)
- Exciton dynamics in a single quantum well with self-assembled islands
M. V. Marquezini, M. J. S. P. Brasil, J. A. Brum, P. Poole, S. Charbonneau and M. C. Tamargo
Phys. Rev. B 53, 16524 (1996)
- Nonequilibrium dynamics of free quantum-well excitons in time-resolved photoluminescence
C. Piermarocchi, F. Tassone, V. Savona, A. Quattropani and P. Schwendimann
Phys. Rev. B 53, 15834 (1996)
- Integrity of quantum-well resonances in metallic overlayers
S. Crampin, S. De Rossi and F. Ciccacci
Phys. Rev. B 53, 13817 (1996)
- Photoluminescence due to positively charged excitons in undoped GaAs/AlxGa1-xAs quantum wells
J. L. Osborne, A. J. Shields, M. Pepper, F. M. Bolton and D. A. Ritchie
Phys. Rev. B 53, 13002 (1996)
- Radiative recombination in cylindrical GaAs-(Ga,Al)As quantum-well wires under quasistationary excitation conditions
S. T. Pérez
Phys. Rev. B 53, 12985 (1996)
- L-band recombination in InxGa1-xP/In0.5Al0.5P multiple quantum wells
D. Patel, K. Interholzinger, P. Thiagarajan, G. Y. Robinson, and C. S. Menoni
Phys. Rev. B 53, 12633 (1996)
- Microwave modulation of circularly polarized exciton photonluminescence in GaAs/AlAs multiple quantum wells
Z. Chen
Phys. Rev. B 53, 10921 (1996)
- Hydrostatic-pressure coefficient of the direct band-gap energy of AlxGa1-xAs for x=0-0.35
Hyeonsik M. Cheong, J. H. Burnett, W. Paul, P. F. Hopkins, K. Campman, and A. C. Gossard
Phys. Rev. B 53, 10916 (1996)
- Hydrostatic-pressure determination of tensile-strained GaxIn1-xP-(AlyGa1-y)0.52In0.48P quantum-well band offsets
O. P. Kowalski, J. W. Cockburn, D. J. Mowbray, M. S. Skolnick, M. D. Dawson, G. Duggan, and A. H. Kean
Phys. Rev. B 53, 10830 (1996)
- Pressure dependence of the photoluminescence of strained (001) and (111) InxGa1-xAs quantum wells
J. L. Sly and D. J. Dunstan
Phys. Rev. B 53, 10116 (1996)
- Multiphotonic lattices and Stark localization of electromagnetic fields in one dimension
Hiroshi Miyazaki, Yoji Jimba, and Takeshi Watanabe
Phys. Rev. A 53, 2877 (1996)