2000 year
- Nanometer-Scale Resolution of Strain and Interdiffusion in Self-Assembled InAs/GaAs Quantum Dots
I. Kegel, T. H. Metzger, A. Lorke, J. Peisl, J. Stangl, G. Bauer, J. M. García and P. M. Petroff
Phys. Rev. Lett. 85, 1694 (2000)
- Evidence for 2D Precursors and Interdiffusion in the Evolution of Self-Assembled CdSe Quantum Dots on ZnSe
C. S. Kim, M. Kim, J. K. Furdyna, M. Dobrowolska, S. Lee, H. Rho, L. M. Smith, Howard E. Jackson, E. M. James, Y. Xin, and N. D. Browning
Phys. Rev. Lett. 85, 1124 (2000)
- Tuning of Vertical and Lateral Correlations in Self-Organized PbSe/Pb1
G. Springholz, M. Pinczolits, P. Mayer, V. Holy, G. Bauer, H. H. Kang, and L. Salamanca-Riba
Phys. Rev. Lett. 84, 4669 (2000)
- Evidence for Phase-Separated Quantum Dots in Cubic InGaN Layers from Resonant Raman Scattering
V. Lemos, E. Silveira, J. R. Leite, A. Tabata, R. Trentin, L. M. R. Scolfaro, T. Frey, D. J. As, D. Schikora, and K. Lischka
Phys. Rev. Lett. 84, 3666 (2000)
- Nonuniform Composition Profile in In0.5Ga0.5As Alloy Quantum Dots
N. Liu, J. Tersoff, O. Baklenov, A. L. Holmes, Jr., and C. K. Shih
Phys. Rev. Lett. 84, 334 (2000)
- Magnetotunneling spectroscopic probe of quantization due to inhomogeneous strain in a Si/SiGe vertical quantum dot
Jun Liu, A. Zaslavsky, C. D. Akyüz, B. R. Perkins, and L. B. Freund
Phys. Rev. B 62, R7731 (2000)
- Size, shape, and stability of InAs quantum dots on the GaAs(001) substrate
L. G. Wang, P. Kratzer, N. Moll, and M. Scheffler
Phys. Rev. B 62, 1897 (2000)
- Tuning quantum dot properties by activated phase separation of an InGa(Al)As alloy grown on InAs stressors
M. V. Maximov, A. F. Tsatsul'nikov, B. V. Volovik, D. S. Sizov, Yu. M. Shernyakov, I. N. Kaiander, A. E. Zhukov, A. R. Kovsh, S. S. Mikhrin, V. M. Ustinov, Zh. I. Alferov, R. Heitz, V. A. Shchukin, N. N. Ledentsov, D. Bimberg, Yu. G. Musikhin and W. Neumann
Phys. Rev. B 62, 16671 (2000)
- Quantum dot self-assembly in growth of strained-layer thin films: A kinetic Monte Carlo study
K. E. Khor and S. Das Sarma
Phys. Rev. B 62, 16657 (2000)
- Effect of growth rate on the size, composition, and optical properties of InAs/GaAs quantum dots grown by molecular-beam epitaxy
P. B. Joyce, T. J. Krzyzewski, G. R. Bell, T. S. Jones, S. Malik, D. Childs, and R. Murray
Phys. Rev. B 62, 10891 (2000)
- Temperature-dependent linewidth of single InP/GaxIn1
ndP. G. Blome, M. Wenderoth, M. Hübner, R. G. Ulbrich, J. Porsche and F. Scholz
Phys. Rev. B 61, 8382 (2000)
- Evidence for strain in and around InAs quantum dots in GaAs from ion-channeling experiments
L. J. M. Selen, L. J. van IJzendoorn, M. J. A. de Voigt and P. M. Koenraad
Phys. Rev. B 61, 8270 (2000)