Lasers
- High-power laser diodes of wavelength 808 nm based on various types of asymmetric heterostructures with an ultrawide waveguide
V. V. Bezotosnyĭ, V. V. Vasil
Semiconductors, 2008, Volume 42, Number 3, 03500353
- Effect of high-power nanosecond and femtosecond laser pulses on silicon nanostructures
G. A. Kachurin, S. G. Cherkova, V. A. Volodin, D. V. Marin and M. Deutschmann
Semiconductors, 2008, Volume 42, Number 2, 01830187
- Stimulated radiation of optically pumped Cd x Hg1 − x Te-Based heterostructures at room temperature
A. A. Andronov, Yu. N. Nozdrin, A. V. Okomel
Semiconductors, 2008, Volume 42, Number 2, 01790182
- 1.8-μm laser diodes based on quantum-size AlInGaAs/InP heterostructures
A. V. Lyutetskiĭ, K. S. Borshchev, A. D. Bondarev, T. A. Nalet, N. A. Pikhtin, S. O. Slipchenko, N. V. Fetisova, M. A. Khomylev, A. A. Marmalyuk, Yu. L. Ryaboshtan, V. A. Simakov and I. S. Tarasov
Semiconductors, 2007, Volume 41, Number 7, 08600864
- Nonlinear-optical effects in semiconductor lasers based on InGaAs/GaAs/AlGaAs quantum-confinement heterostructures
N. S. Averkiev, S. O. Slipchenko, Z. N. Sokolova, N. A. Pikhtin and I. S. Tarasov
Semiconductors, 2007, Volume 41, Number 3, 03610364
- Double-band generation in quantum-well semiconductor laser at high injection levels
D. A. Vinokurov, S. A. Zorina, V. A. Kapitonov, A. Yu. Leshko, A. V. Lyutetskiĭ, T. A. Nalet, D. N. Nikolaev, N. A. Pikhtin, N. A. Rudova, S. O. Slipchenko, Z. N. Sokolova, A. L. Stankevich, N. V. Fetisova, M. A. Khomylev, V. V. Shamakhov, K. S. Borshchev, I. N. Arsent
Semiconductors, 2007, Volume 41, Number 10, 12301233
- High-power laser diodes (λ = 808
A. Yu. Andreev, A. Yu. Leshko, A. V. Lyutetskiĭ, A. A. Marmalyuk, T. A. Nalyot, A. A. Padalitsa, N. A. Pikhtin, D. R. Sabitov, V. A. Simakov, S. O. Slipchenko, M. A. Khomylev and I. S. Tarasov
Semiconductors, 2006, Volume 40, Number 5, 06110614
- The formation of natural oxide on the mirrors of GaSb/GaInAsSb/GaAlAsSb laser heterostructures at places of emergence of al-rich layers
P. A. Dement
Semiconductors, 2006, Volume 40, Number 11, 12471254
- Interfacial and interband lasing in an AnAs/InAsSbP heterostructure grown by vapor-phase epitaxy from metal-organic compounds
A. P. Astakhova, N. D. Il
Semiconductors, 2005, Volume 39, Number 4, 04720476
- 1.7
A. V. Lyutetskii, N. A. Pikhtin, S. O. Slipchenko, Z. N. Sokolova, N. V. Fetisova, A. Yu. Leshko, V. V. Shamakhov, A. Yu. Andreev, E. G. Golikova, Yu. A. Ryaboshtan and I. S. Tarasov
Semiconductors, 2003, Volume 37, Number 11, 13561362
- High power single-mode (λ=1.3
A. Yu. Leshko, A. V. Lyutetskii, N. A. Pikhtin, S. O. Slipchenko, Z. N. Sokolova, N. V. Fetisova, E. G. Golikova, Yu. A. Ryaboshtan and I. S. Tarasov
Semiconductors, 2002, Volume 36, Number 11, 13081314
- Record power characteristics of InGaAs/AlGaAs/GaAs heterostructure lasers
D. A. Livshits, A. Yu. Egorov, I. V. Kochnev, V. A. Kapitonov, V. M. Lantratov, N. N. Ledentsov, T. A. Nalyot and I. S. Tarasov
Semiconductors, 2001, Volume 35, Number 3, 03650369
- InAsSb/InAsSbP double-heterostructure lasers emitting in the 3
T. N. Danilova, A. N. Imenkov, N. M. Kolchanova and Yu. P. Yakovlev
Semiconductors, 2001, Volume 35, Number 12, 14041417
- Emission-line broadening of current tunable InAsSbP/InAsSb/InAsSbP heterostructure lasers
A. N. Imenkov, N. M. Kolchanova, P. Kubat, S. Civish and Yu. P. Yakovlev
Semiconductors, 2000, Volume 34, Number 12, 14061409
- InAsSb/InAsSbP double-heterostructure lasers emitting at 3
T. N. Danilova, A. N. Imenkov, V. V. Sherstnev and Yu. P. Yakovlev
Semiconductors, 2000, Volume 34, Number 11, 13431350
- InGaAsSb(Gd)/InAsSbP double heterostructure lasers (λ=3.0
M. Aidaraliev1, T. Beyer2, N. V. Zotova1, S. A. Karandashev1, B. A. Matveev1 Contact Information, M. A. Remennyi1, N. M. Stus
Semiconductors, 2000, Volume 34, Number 7, 08480852
- Spectral characteristics of lasers based on InGaAsSb/InAsSbP double heterostructures (λ=3.0
M. Aidaraliev, N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus
Semiconductors, 2000, Volume 34, Number 4, 04880492
- Short-wavelength current tuning of InAsSb/InAsSbP heterostructure lasers caused by an injection nonuniformity
A. P. Danilova, T. N. Danilova, A. N. Imenkov, N. M. Kolchanova, M. V. Stepanov, V. V. Sherstnev and Yu. P. Yakovlev
Semiconductors, 1999, Volume 33, Number 9, 09910995
- Gain and internal losses in InGaAsSb/InAsSbP double-heterostructure lasers
M. Aidaraliev, N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus
Semiconductors, 1999, Volume 33, Number 6, 07000703
- Rapid tuning of the generation frequency of InAsSb/InAsSbP diode lasers (λ=3.3
A. P. Danilova, T. N. Danilova, A. N. Imenkov, N. M. Kolchanova, M. V. Stepanov, V. V. Sherstnev and Yu. P. Yakovlev
Semiconductors, 1999, Volume 33, Number 2, 02100215
- Anomalous Decline of Molecular Ion Mobility in Cooled Helium Gas
Kazumasa Ohtsuki, Masatoshi Hananoe, and Michio Matsuzawa
Phys. Rev. Lett. 95, 213201 (2005)
- Theory of a single-atom laser including light forces
Thomas Salzburger, Peter Domokos, and Helmut Ritsch
Phys. Rev. A 72, 033805 (2005)