Electrical properties
- CdTe as a passivating layer in CdTe/HgCdTe heterostructures
I. S. Virt, I. V. Kurilo, I. A. Rudyĭ, F. F. Sizov, N. N. Mikhaĭlov and R. N. Smirnov
Semiconductors, 2008, Volume 42, Number 7, 07720776
- Deep levels and electron transport in AlGaN/GaN heterostructures
I. V. Antonova, V. I. Polyakov, A. I. Rukavishnikov, V. G. Mansurov and K. S. Zhuravlev
Semiconductors, 2008, Volume 42, Number 1, 00520058
- Reconstruction of dependences of the tunneling current on the oxide voltage using the dynamic current-voltage characteristics of the n +-Si-SiO2- n -Si heterostructures
A. G. Zhdan, N. F. Kukharskaya, V. G. Naryshkina and G. V. Chucheva
Semiconductors, 2007, Volume 41, Number 9, 11171125
- A study of isotype photosensitive heterostructures (intrinsic oxide)- n -InSe prepared by long-term thermal oxidation
Z. D. Kovalyuk, O. N. Sydor, V. N. Katerinchuk and V. V. Netyaga
Semiconductors, 2007, Volume 41, Number 9, 10561059
- High-efficiency LEDs based on n -GaSb/ p -GaSb/ n -GaInAsSb/ P -AlGaAsSb type-II thyristor heterostructures
N. D. Stoyanov, B. E. Zhurtanov, A. N. Imenkov, A. P. Astakhova, M. P. Mikhaĭlova and Yu. P. Yakovlev
Semiconductors, 2007, Volume 41, Number 7, 08550859
- Special features of the Fourier spectra of magnetoresistance oscillations in a heavily doped heterostructure
V. I. Kadushkin
Semiconductors, 2007, Volume 41, Number 3, 03070313
- Effect of the buffer layer of GaSe intrinsic oxide with nanometer thickness on electrical, photoelectric, and emissive properties of ITO-GaSe heterostructures
S. I. Drapak and Z. D. Kovalyuk
Semiconductors, 2007, Volume 41, Number 3, 03010306
- Electrical properties of n -ZnO/ p -CuO heterostructures
B. M. Vermenichev, O. L. Lisitskiĭ, M. E. Kumekov, S. E. Kumekov, E. I. Terukov and S. Zh. Tokmoldin
Semiconductors, 2007, Volume 41, Number 3, 02880290
- Alternating current conductivity of anisotropically nanostructured silicon
P. A. Forsh, M. N. Martyshov, V. Yu. Timoshenko and P. K. Kashkarov
Semiconductors, 2006, Volume 40, Number 4, 04710475
- Quasi-hydrodynamic simulation of the conductivity of heavily doped nanosize layered heterostructures in high electric fields
V. A. Gergel
Semiconductors, 2006, Volume 40, Number 4, 04400442
- Thermophotovoltaic cells based on In0.53Ga0.47As/InP heterostructures
L. B. Karlina, A. S. Vlasov, M. M. Kulagina and N. Kh. Timoshina
Semiconductors, 2006, Volume 40, Number 3, 03460350
- Electronic structure of titanium disulfide nanostructures: Monolayers, nanostripes, and nanotubes
V. V. Ivanovskaya, G. Seifert and A. L. Ivanovskii
Semiconductors, 2005, Volume 39, Number 9, 10581065
- The mechanisms of current transport and properties of a-SiC:H/c-Si heterostructures
A. A. Sherchenkov, B. G. Budagyan and A. V. Mazurov
Semiconductors, 2005, Volume 39, Number 8, 09280933
- Nanostructuring of crystalline grains of natural diamond using ionizing radiation
N. A. Poklonski, T. M. Lapchuk, N. I. Gorbachuk, V. A. Nikolaenko and I. V. Bachuchin
Semiconductors, 2005, Volume 39, Number 8, 08940897
- A ferroelectric field effect transistor based on a Pb(ZrxTi1−x)O3/SnO2 heterostructure
I. E. Titkov, I. P. Pronin, D. V. Mashovets, L. A. Delimova, I. A. Liniichuk and I. V. Grekhov
Semiconductors, 2005, Volume 39, Number 7, 08560860
- Photosensitivity of heterostructures based on finely ground semiconductor phases
Yu. A. Nikolaev, V. Yu. Rud
Semiconductors, 2005, Volume 39, Number 11, 12941298
- Role of Si-doped Al0.3Ga0.7As layers in the high-frequency conductivity of GaAs/Al0.3Ga0.7As heterostructures under conditions of the quantum hall effect
I. L. Drichko, A. M. D
Semiconductors, 2004, Volume 38, Number 6, 07020711
- Effect of hydrogen sulfide on photoelectric characteristics of Al-n-Si-SnO2:Cu-Ag isotype heterostructures
S. V. Slobodchikov, E. V. Russu, É. V. Ivanov, Yu. G. Malinin and Kh. M. Salikhov
Semiconductors, 2004, Volume 38, Number 12, 13811383
- Formation of two-and one-dimensional solid-phase quantum nanostructures in the CdHgTe-electrolyte system
V. B. Bozhevolnov, A. M. Yafyasov and P. P. Konorov
Semiconductors, 2004, Volume 38, Number 11, 13321339
- MOCVD-grown AlGaN/GaN heterostructures with high electron mobility
V. V. Lundin, E. E. Zavarin, A. I. Besulkin, A. G. Gladyshev, A. V. Sakharov, M. F. Kokorev, N. M. Shmidt, A. F. Tsatsul
Semiconductors, 2004, Volume 38, Number 11, 13231325
- Influence of hydrogen sulfide on electrical and photoelectric properties of Al-p-Si-SnO2:Cu-Ag heterostructures
S. V. Slobodchikov, E. V. Russu, É. V. Ivanov, Yu. G. Malinin and Kh. M. Salikhov
Semiconductors, 2004, Volume 38, Number 10, 11981201
- Specific features of electrical transport in anisotropically nanostructured silicon
P. A. Forsh, L. A. Osminkina, V. Yu. Timoshenko and P. K. Kashkarov
Semiconductors, 2004, Volume 38, Number 5, 06030606
- Modification of the nanostructure of diamond-like carbon films by bombardment with xenon ions
I. A. Faizrakhmanov, V. V. Bazarov, A. L. Stepanov and I. B. Khaibullin
Semiconductors, 2003, Volume 37, Number 6, 07230726
- Barrier formation in a heterostructure formed of native oxide and p-InSe. Electrical and photoelectrical properties
S. I. Drapak, V. B. Orletskii, Z. D. Kovalyuk and V. V. Netyaga
Semiconductors, 2003, Volume 37, Number 2, 01870193
- Electrical properties of the p+-Bi2Te3-p-GaSe isotype heterostructure
S. I. Drapak, V. A. Manasson, V. V. Netyaga and Z. D. Kovalyuk
Semiconductors, 2003, Volume 37, Number 2, 01720177
- Spontaneous formation of the periodic composition-modulated nanostructure in CdxHg1−xTe films
P. A. Bakhtin, V. S. Varavin, S. A. Dvoretskii, A. F. Kravchenko, A. V. Latyshev, N. N. Mikchailov, I. V. Sabinina, Yu. G. Sidorov and M. V. Yakushev
Semiconductors, 2003, Volume 37, Number 11, 13311335
- Photoelectric phenomena in ZnO:Al-p-Si heterostructures
S. E. Nikitin, Yu. A. Nikolaev, I. K. Polushina, V. Yu. Rud
Semiconductors, 2003, Volume 37, Number 11, 12911295
- Optical storage on the basis of an n-InSb-SiO2-p-Si heterostructure
Yu. A. Nikol
Semiconductors, 2002, Volume 36, Number 9, 09900992
- Evaluation of mobility gaps and density of localized hole states in p-Ge/Ge1−xSix heterostructures in the quantum Hall effect mode
Yu. G. Arapov, O. A. Kuznetsov, V. N. Neverov, G. I. Kharus, N. G. Shelushinina and M. V. Yakunin
Semiconductors, 2002, Volume 36, Number 5, 05190526
- Electrical properties of CdxHg1−xTe/CdZnTe heterostructures
A. G. Belov, A. I. Belogorokhov and V. M. Lakeenkov
Semiconductors, 2001, Volume 35, Number 8, 08800882
- The effect of bombardment with carbon ions on the nanostructure of diamond-like films
I. A. Faizrakhmanov, V. V. Bazarov, V. A. Zhikharev and I. B. Khaibullin
Semiconductors, 2001, Volume 35, Number 5, 05910597
- Kinetics of exciton photoluminescence in low-dimensional silicon structures
A. V. Sachenko, É. B. Kaganovich, É. G. Manoilov and S. V. Svechnikov
Semiconductors, 2001, Volume 35, Number 12, 13831389
- Photoelectric phenomena in (μcxa1−x)-Si:H/c-Si heterostructures
H. Mell, Yu. A. Nikolaev, V. Yu. Rud
Semiconductors, 2001, Volume 35, Number 11, 12591262
- Special features of photoelectric properties of nanostructured films of hydrogenated silicon
O. A. Golikova and M. M. Kazanin
Semiconductors, 2001, Volume 35, Number 10, 11871190
- Interface states and capacitance-voltage characteristics of n-SnO2:Ni/p-Si heterostructures under gas-adsorption conditions
R. B. Vasil
Semiconductors, 2001, Volume 35, Number 4, 04240426
- Photovoltaic effect in a-Si:H/n-InSe heterostructures
R. N. Bekimbetov, Yu. A. Nikolaev, V. Yu. Rud
Semiconductors, 2000, Volume 34, Number 9, 10641067
- Properties of diode heterostructures based on nanocrystalline n-SnO2 on p-Si under the conditions of gas Adsorption
R. B. Vasil
Semiconductors, 2000, Volume 34, Number 8, 09550959
- Thermoelectric and photoelectric properties of the p-n CuInSe2/CdS heterostructures obtained by the quasi-equilibrium deposition method
M. -R. A. Magomedov, Sh. M. Ismailov, Dzh. Kh. Magomedova and P. P. Khokhlachev
Semiconductors, 2000, Volume 34, Number 6, 06620664
- Photoelectric phenomena in a-Si:H/p-CuInSe2 heterostructures
Yu. A. Nikolaev, V. Yu. Rud
Semiconductors, 2000, Volume 34, Number 6, 06580661
- Short-wavelength current tuning of InAsSb/InAsSbP heterostructure lasers caused by an injection nonuniformity
A. P. Danilova, T. N. Danilova, A. N. Imenkov, N. M. Kolchanova, M. V. Stepanov, V. V. Sherstnev and Yu. P. Yakovlev
Semiconductors, 1999, Volume 33, Number 9, 09910995
- Heterostructure solar cells
V. M. Andreev
Semiconductors, 1999, Volume 33, Number 9, 09420945
- Electrical and photoelectric characteristics of an isotypic n-ZnO-n-Si structure
S. V. Slobodchikov, Kh. M. Salikhov and E. V. Russu
Semiconductors, 1999, Volume 33, Number 4, 04210422
- Surface mobility and distribution of electrons in the accumulation layer of Ga2Se3/GaAs heterostructures
V. F. Antyushin, D. A. Vlasov and I. N. Arsent
Semiconductors, 1998, Volume 32, Number 6, 06460648
- Impact ionization luminescence of InGaN/AlGaN/GaN p-n-heterostructures
A. N. Kovalev, F. I. Manyakhin, V. E. Kudryashov, A. N. Turkin and A. É. Yunovich
Semiconductors, 1998, Volume 32, Number 1, 00540057
- Decoherence in Josephson Qubits from Dielectric Loss
John M. Martinis, K. B. Cooper, R. McDermott, Matthias Steffen, Markus Ansmann, K. D. Osborn, K. Cicak, Seongshik Oh, D. P. Pappas, R. W. Simmonds, and Clare C. Yu
Phys. Rev. Lett. 95, 210503 (2005)
- Link between Adatom Resonances and the Cu(111) Shockley Surface State
Jérôme Lagoute, Xi Liu, and Stefan Fölsch
Phys. Rev. Lett. 95, 136801 (2005)
- Electron Emission from Diamondoids: A Diffusion Quantum Monte Carlo Study
N. D. Drummond, A. J. Williamson, R. J. Needs, and G. Galli
Phys. Rev. Lett. 95, 096801 (2005)
- Voltage-controlled spin injection in a (Ga,Mn)As∕(Al,Ga)As Zener diode
P. Van Dorpe, W. Van Roy, J. De Boeck, G. Borghs, P. Sankowski, P. Kacman, J. A. Majewski, T. Dietl
Phys. Rev. B 72, 205322 (2005)
- From Kondo semiconductor to a singular non-Fermi liquid via a quantum critical point: The case of CeRhSb1
J. Spalek, A. Slebarski, J. Goraus, L. Spalek, K. Tomala, A. Zarzycki, and A. Hackemer
Phys. Rev. B 72, 155112 (2005)
- Nonlocal electrodynamics of rotating systems
Bahram Mashhoon
Phys. Rev. A 72, 052105 (2005)
- Tunable whispering-gallery-mode resonators for cavity quantum electrodynamics
Y. Louyer, D. Meschede, and A. Rauschenbeutel
Phys. Rev. A 72, 031801 (2005)
- Charge transfer in slow collisions of C6+ with H below 1 keV∕amu
Chien-Nan Liu, Shu-Chun Cheng, Anh-Thu Le, and C. D. Lin
Phys. Rev. A 72, 012717 (2005)