Optical properties
- CdTe as a passivating layer in CdTe/HgCdTe heterostructures
I. S. Virt, I. V. Kurilo, I. A. Rudyĭ, F. F. Sizov, N. N. Mikhaĭlov and R. N. Smirnov
Semiconductors, 2008, Volume 42, Number 7, 07720776
- Resonance tunneling of charge carriers in photoexcited type-II ZnSe/BeTe heterostructures
S. V. Zaitsev, A. A. Maksimov, I. I. Tartakovskiĭ, D. R. Yakovlev and A. Waag
Semiconductors, 2008, Volume 42, Number 5, 05400544
- Low-noise photodiodes based on GaSb/GaInAsSb/AlGaAsSb double heterostructures for the 1
B. E. Zhurtanov, N. D. Il
Semiconductors, 2008, Volume 42, Number 4, 04580462
- High-power laser diodes of wavelength 808 nm based on various types of asymmetric heterostructures with an ultrawide waveguide
V. V. Bezotosnyĭ, V. V. Vasil
Semiconductors, 2008, Volume 42, Number 3, 03500353
- Radiative recombination channels in Si/Si1 − x Ge x nanostructures
Yu. A. Berashevich, A. S. Panfilenok and V. E. Borisenko
Semiconductors, 2008, Volume 42, Number 1, 00670073
- A study of isotype photosensitive heterostructures (intrinsic oxide)- n -InSe prepared by long-term thermal oxidation
Z. D. Kovalyuk, O. N. Sydor, V. N. Katerinchuk and V. V. Netyaga
Semiconductors, 2007, Volume 41, Number 9, 10561059
- 1.8-μm laser diodes based on quantum-size AlInGaAs/InP heterostructures
A. V. Lyutetskiĭ, K. S. Borshchev, A. D. Bondarev, T. A. Nalet, N. A. Pikhtin, S. O. Slipchenko, N. V. Fetisova, M. A. Khomylev, A. A. Marmalyuk, Yu. L. Ryaboshtan, V. A. Simakov and I. S. Tarasov
Semiconductors, 2007, Volume 41, Number 7, 08600864
- High-efficiency LEDs based on n -GaSb/ p -GaSb/ n -GaInAsSb/ P -AlGaAsSb type-II thyristor heterostructures
N. D. Stoyanov, B. E. Zhurtanov, A. N. Imenkov, A. P. Astakhova, M. P. Mikhaĭlova and Yu. P. Yakovlev
Semiconductors, 2007, Volume 41, Number 7, 08550859
- Nonlinear-optical effects in semiconductor lasers based on InGaAs/GaAs/AlGaAs quantum-confinement heterostructures
N. S. Averkiev, S. O. Slipchenko, Z. N. Sokolova, N. A. Pikhtin and I. S. Tarasov
Semiconductors, 2007, Volume 41, Number 3, 03610364
- Effect of the buffer layer of GaSe intrinsic oxide with nanometer thickness on electrical, photoelectric, and emissive properties of ITO-GaSe heterostructures
S. I. Drapak and Z. D. Kovalyuk
Semiconductors, 2007, Volume 41, Number 3, 03010306
- Double-band generation in quantum-well semiconductor laser at high injection levels
D. A. Vinokurov, S. A. Zorina, V. A. Kapitonov, A. Yu. Leshko, A. V. Lyutetskiĭ, T. A. Nalet, D. N. Nikolaev, N. A. Pikhtin, N. A. Rudova, S. O. Slipchenko, Z. N. Sokolova, A. L. Stankevich, N. V. Fetisova, M. A. Khomylev, V. V. Shamakhov, K. S. Borshchev, I. N. Arsent
Semiconductors, 2007, Volume 41, Number 10, 12301233
- Thermophotovoltaic cells based on In0.53Ga0.47As/InP heterostructures
L. B. Karlina, A. S. Vlasov, M. M. Kulagina and N. Kh. Timoshina
Semiconductors, 2006, Volume 40, Number 3, 03460350
- Spectral sensitivity of p-Cu1.8S/n−-ZnS/n-(II-VI) heterostructures
V. N. Komaschenko, K. V. Kolezhuk, N. V. Yaroshenko, G. I. Sheremetova and Yu. N. Bobrenko
Semiconductors, 2006, Volume 40, Number 3, 03270330
- Light-induced metal-insulator transition in n-GaAs/AlGaAs heterostructure: Acoustic methods of study
I. L. Drichko, A. M. D
Semiconductors, 2006, Volume 40, Number 12, 14151422
- Photosensitivity of heterostructures based on finely ground semiconductor phases
Yu. A. Nikolaev, V. Yu. Rud
Semiconductors, 2005, Volume 39, Number 11, 12941298
- GaAs/Ge heterostructure photovoltaic cells fabricated by a combination of MOCVD and zinc diffusion techniques
V. M. Andreev, V. P. Khvostikov, N. A. Kalyuzhnyi, S. S. Titkov, O. A. Khvostikova and M. Z. Shvarts
Semiconductors, 2004, Volume 38, Number 3, 03550359
- Effect of hydrogen sulfide on photoelectric characteristics of Al-n-Si-SnO2:Cu-Ag isotype heterostructures
S. V. Slobodchikov, E. V. Russu, É. V. Ivanov, Yu. G. Malinin and Kh. M. Salikhov
Semiconductors, 2004, Volume 38, Number 12, 13811383
- Influence of hydrogen sulfide on electrical and photoelectric properties of Al-p-Si-SnO2:Cu-Ag heterostructures
S. V. Slobodchikov, E. V. Russu, É. V. Ivanov, Yu. G. Malinin and Kh. M. Salikhov
Semiconductors, 2004, Volume 38, Number 10, 11981201
- Modification of the nanostructure of diamond-like carbon films by bombardment with xenon ions
I. A. Faizrakhmanov, V. V. Bazarov, A. L. Stepanov and I. B. Khaibullin
Semiconductors, 2003, Volume 37, Number 6, 07230726
- Determination of the parameters of multilayer nanostructures using two-wave X-ray reflectometry
N. L. Popov, Yu. A. Uspenskii, A. G. Turyanskii, I. V. Pirshin, A. V. Vinogradov and Yu. Ya. Platonov
Semiconductors, 2003, Volume 37, Number 6, 06750680
- Barrier formation in a heterostructure formed of native oxide and p-InSe. Electrical and photoelectrical properties
S. I. Drapak, V. B. Orletskii, Z. D. Kovalyuk and V. V. Netyaga
Semiconductors, 2003, Volume 37, Number 2, 01870193
- 1.7
A. V. Lyutetskii, N. A. Pikhtin, S. O. Slipchenko, Z. N. Sokolova, N. V. Fetisova, A. Yu. Leshko, V. V. Shamakhov, A. Yu. Andreev, E. G. Golikova, Yu. A. Ryaboshtan and I. S. Tarasov
Semiconductors, 2003, Volume 37, Number 11, 13561362
- Photoelectric phenomena in ZnO:Al-p-Si heterostructures
S. E. Nikitin, Yu. A. Nikolaev, I. K. Polushina, V. Yu. Rud
Semiconductors, 2003, Volume 37, Number 11, 12911295
- Optical storage on the basis of an n-InSb-SiO2-p-Si heterostructure
Yu. A. Nikol
Semiconductors, 2002, Volume 36, Number 9, 09900992
- Band-edge line-up in GaAs/GaAsN/InGaAs heterostructures
A. Yu. Egorov, V. A. Odnoblyudov, N. V. Krizhanovskaya, V. V. Mamutin and V. M. Ustinov
Semiconductors, 2002, Volume 36, Number 12, 13551359
- High power single-mode (λ=1.3
A. Yu. Leshko, A. V. Lyutetskii, N. A. Pikhtin, S. O. Slipchenko, Z. N. Sokolova, N. V. Fetisova, E. G. Golikova, Yu. A. Ryaboshtan and I. S. Tarasov
Semiconductors, 2002, Volume 36, Number 11, 13081314
- The effect of bombardment with carbon ions on the nanostructure of diamond-like films
I. A. Faizrakhmanov, V. V. Bazarov, V. A. Zhikharev and I. B. Khaibullin
Semiconductors, 2001, Volume 35, Number 5, 05910597
- Record power characteristics of InGaAs/AlGaAs/GaAs heterostructure lasers
D. A. Livshits, A. Yu. Egorov, I. V. Kochnev, V. A. Kapitonov, V. M. Lantratov, N. N. Ledentsov, T. A. Nalyot and I. S. Tarasov
Semiconductors, 2001, Volume 35, Number 3, 03650369
- InAsSb/InAsSbP double-heterostructure lasers emitting in the 3
T. N. Danilova, A. N. Imenkov, N. M. Kolchanova and Yu. P. Yakovlev
Semiconductors, 2001, Volume 35, Number 12, 14041417
- Photoelectric phenomena in (μcxa1−x)-Si:H/c-Si heterostructures
H. Mell, Yu. A. Nikolaev, V. Yu. Rud
Semiconductors, 2001, Volume 35, Number 11, 12591262
- Special features of photoelectric properties of nanostructured films of hydrogenated silicon
O. A. Golikova and M. M. Kazanin
Semiconductors, 2001, Volume 35, Number 10, 11871190
- Structural, luminescent, and transport properties of hybrid AlAsSb/InAs/Cd(Mg)Se heterostructures grown by molecular beam epitaxy
V. A. Solov
Semiconductors, 2001, Volume 35, Number 4, 04190423
- Photovoltaic effect in a-Si:H/n-InSe heterostructures
R. N. Bekimbetov, Yu. A. Nikolaev, V. Yu. Rud
Semiconductors, 2000, Volume 34, Number 9, 10641067
- Thermoelectric and photoelectric properties of the p-n CuInSe2/CdS heterostructures obtained by the quasi-equilibrium deposition method
M. -R. A. Magomedov, Sh. M. Ismailov, Dzh. Kh. Magomedova and P. P. Khokhlachev
Semiconductors, 2000, Volume 34, Number 6, 06620664
- Photoelectric phenomena in a-Si:H/p-CuInSe2 heterostructures
Yu. A. Nikolaev, V. Yu. Rud
Semiconductors, 2000, Volume 34, Number 6, 06580661
- Absorption features in a-Si/ZrOx nanostructures
A. F. Khokhlov, I. A. Chuchmai and A. V. Ershov
Semiconductors, 2000, Volume 34, Number 3, 03440347
- Emission-line broadening of current tunable InAsSbP/InAsSb/InAsSbP heterostructure lasers
A. N. Imenkov, N. M. Kolchanova, P. Kubat, S. Civish and Yu. P. Yakovlev
Semiconductors, 2000, Volume 34, Number 12, 14061409
- Long-wavelength light-emitting diodes (λ=3.4
N. V. Zotova, S. S. Kizhaev, S. S. Molchanov, T. B. Popova and Yu. P. Yakovlev
Semiconductors, 2000, Volume 34, Number 12, 14021405
- InAsSb/InAsSbP double-heterostructure lasers emitting at 3
T. N. Danilova, A. N. Imenkov, V. V. Sherstnev and Yu. P. Yakovlev
Semiconductors, 2000, Volume 34, Number 11, 13431350
- InGaAsSb(Gd)/InAsSbP double heterostructure lasers (λ=3.0
M. Aidaraliev1, T. Beyer2, N. V. Zotova1, S. A. Karandashev1, B. A. Matveev1 Contact Information, M. A. Remennyi1, N. M. Stus
Semiconductors, 2000, Volume 34, Number 7, 08480852
- GaInAsSb/GaSb heterostructures grown in the spinodal decay region by liquid-phase epitaxy from Sb-enriched solution-melts
V. I. Vasil
Semiconductors, 1999, Volume 33, Number 9, 10341036
- Short-wavelength current tuning of InAsSb/InAsSbP heterostructure lasers caused by an injection nonuniformity
A. P. Danilova, T. N. Danilova, A. N. Imenkov, N. M. Kolchanova, M. V. Stepanov, V. V. Sherstnev and Yu. P. Yakovlev
Semiconductors, 1999, Volume 33, Number 9, 09910995
- Heterostructure solar cells
V. M. Andreev
Semiconductors, 1999, Volume 33, Number 9, 09420945
- Fabrication and properties of In2O3/CdS/CuInSe2 heterostructures
V. Yu. Rud
Semiconductors, 1999, Volume 33, Number 7, 07360739
- Optical activity of Yb in GaAs and low-dimensional GaAs/GaAlAs structures
A. A. Gippius, V. M. Konnov, V. A. Dravin, N. N. Loiko, I. P. Kazakov and V. V. Ushakov
Semiconductors, 1999, Volume 33, Number 6, 06270629
- Rapid tuning of the generation frequency of InAsSb/InAsSbP diode lasers (λ=3.3
A. P. Danilova, T. N. Danilova, A. N. Imenkov, N. M. Kolchanova, M. V. Stepanov, V. V. Sherstnev and Yu. P. Yakovlev
Semiconductors, 1999, Volume 33, Number 2, 02100215
- Electrical and photoelectric characteristics of an isotypic n-ZnO-n-Si structure
S. V. Slobodchikov, Kh. M. Salikhov and E. V. Russu
Semiconductors, 1999, Volume 33, Number 4, 04210422
- Photosensitivity of porous silicon-layered III
A. A. Lebedev, Yu. V. Rud
Semiconductors, 1998, Volume 32, Number 3, 03200321
- Preparation and photosensitivity of heterostructures based on anodized silicon carbide
A. A. Lebedev, A. A. Lebedev, Yu. V. Rud
Semiconductors, 1998, Volume 32, Number 3, 02950296
- Impact ionization luminescence of InGaN/AlGaN/GaN p-n-heterostructures
A. N. Kovalev, F. I. Manyakhin, V. E. Kudryashov, A. N. Turkin and A. É. Yunovich
Semiconductors, 1998, Volume 32, Number 1, 00540057
- Photosensitivity of InP/CdS heterostructures in linearly polarized light
V. M. Botnaryuk, L. V. Gorchak, V. N. Pleshka, V. Yu. Rud
Semiconductors, 1997, Volume 31, Number 2, 01940196
- Linear Optics Controlled-Phase Gate Made Simple
Nikolai Kiesel, Christian Schmid, Ulrich Weber, Rupert Ursin, and Harald Weinfurter
Phys. Rev. Lett. 95, 210505 (2005)
- Optical Transfer Functions of Kerr Nonlinear Cavities and Interferometers
Henning Rehbein, Jan Harms, Roman Schnabel, and Karsten Danzmann
Phys. Rev. Lett. 95, 193001 (2005)
- Vortex Phase Qubit: Generating Arbitrary, Counterrotating, Coherent Superpositions in Bose-Einstein Condensates via Optical Angular Momentum Beams
Kishore T. Kapale and Jonathan P. Dowling
Phys. Rev. Lett. 95, 173601 (2005)
- Routes Towards Anderson-Like Localization of Bose-Einstein Condensates in Disordered Optical Lattices
T. Schulte, S. Drenkelforth, J. Kruse, W. Ertmer, J. Arlt, K. Sacha, J. Zakrzewski, and M. Lewenstein
Phys. Rev. Lett. 95, 170411 (2005)
- Electron Emission from Diamondoids: A Diffusion Quantum Monte Carlo Study
N. D. Drummond, A. J. Williamson, R. J. Needs, and G. Galli
Phys. Rev. Lett. 95, 096801 (2005)
- Probing Planck scale physics with IceCube
Luis A. Anchordoqui, Haim Goldberg, M. C. Gonzalez-Garcia, Francis Halzen, Dan Hooper, Subir Sarkar, Thomas J. Weiler
Phys. Rev. D 72, 065019 (2005)
- Self-assembling of nanocavities in TiO2 dispersed with Au nanoclusters
C. M. Wang, Y. Zhang, V. Shutthanandan, D. R. Baer, W. J. Weber, L. E. Thomas, S. Thevuthasan, G. Duscher
Phys. Rev. B 72, 245421 (2005)
- Fingerprints of spin-orbital physics in cubic Mott insulators: Magnetic exchange interactions and optical spectral weights
Andrzej M. Oleś, Giniyat Khaliullin, Peter Horsch, and Louis Felix Feiner
Phys. Rev. B 72, 214431 (2005)
- Optimal focusing for maximal collection of entangled narrow-band photon pairs into single-mode fibers
Daniel Ljunggren and Maria Tengner
Phys. Rev. A 72, 062301 (2005)
- Dynamical model of coherent circularly polarized optical pulse interactions with two-level quantum systems
G. Slavcheva and O. Hess
Phys. Rev. A 72, 053804 (2005)
- Quantum-limited velocity readout and quantum feedback cooling of a trapped ion via electromagnetically induced transparency
P. Rabl, V. Steixner, and P. Zoller
Phys. Rev. A 72, 043823 (2005)
- Distance-based degrees of polarization for a quantum field
A. B. Klimov, L. L. Sánchez-Soto, E. C. Yustas, J. Söderholm, and G. Björk
Phys. Rev. A 72, 033813 (2005)
- Theory of a single-atom laser including light forces
Thomas Salzburger, Peter Domokos, and Helmut Ritsch
Phys. Rev. A 72, 033805 (2005)
- Quasideterministic generation of maximally entangled states of two mesoscopic atomic ensembles by adiabatic quantum feedback
Antonio Di Lisi, Silvio De Siena, Fabrizio Illuminati, and David Vitali
Phys. Rev. A 72, 032328 (2005)
- Tunable whispering-gallery-mode resonators for cavity quantum electrodynamics
Y. Louyer, D. Meschede, and A. Rauschenbeutel
Phys. Rev. A 72, 031801 (2005)