2000 year
- Homogeneous line broadening in individual semiconductor quantum dots by temperature fluctuations
M. Arzberger and M.-C. Amann
Phys. Rev. B 62, 11029 (2000)
- Effect of homogeneous broadening of optical gain on lasing spectra in self-assembled InxGa1
Mitsuru Sugawara, Kohki Mukai, Yoshiaki Nakata, Hiroshi Ishikawa and Akira Sakamoto
Phys. Rev. B 61, 7595 (2000)
- Low-threshold oxide-confined 1.3-μm quantum-dot laser
Gyoungwon Park Shchekin, O.B. Huffaker, D.L. Deppe, D.G.
IEEE J. Phot. Technol. Lett., 12, 230 (2000)
- Self-assembled In0.5Ga0.5As quantum-dot lasers with doped active region
Nien-Tze Yeh Jia-Ming Lee Tzer-En Nee Jen-Inn Chyi
IEEE J. Phot. Technol. Lett., 12, 1123 (2000)
- Long-wavelength quantum dot lasers on GaAs substrates
V M Ustinov, A E Zhukov, A R Kovsh, S S Mikhrin, N A Maleev, B V Volovik, Yu G Musikhin, Yu M Shernyakov, E Yu Kondat'eva, M V Maximov, A F Tsatsul'nikov, N N Ledentsov, Zh I Alferov, J A Lott and D Bimberg
Nanotechnol., 11, 397 (2000)
- Double heterostructure lasers: early days and future perspectives
Alferov, Z.
IEEE J. Select. Topics Quantum Electron., 6, 832 (2000)
- Lateral carrier confinement in miniature lasers using quantum dots
Kim, J.K. Naone, R.L. Coldren, L.A.
IEEE J. Select. Topics Quantum Electron., 6, 504 (2000)
- Intersubband quantum-box semiconductor lasers
Chia-Fu Hsu Jeong-Seok O Zory, P. Botez, D.
IEEE J. Select. Topics Quantum Electron., 6, 491 (2000)
- Performance and physics of quantum-dot lasers with self-assembled columnar-shaped and 1.3-μm emitting InGaAs quantum dots
Sugawara, M. Mukai, K. Nakata, Y. Otsubo, K. Ishilkawa, H.
IEEE J. Select. Topics Quantum Electron., 6, 462 (2000)
- Continuous-wave low-threshold performance of 1.3-μm InGaAs-GaAs quantum-dot lasers
Huffaker, D.L. Park, G. Zou, Z. Shchekin, O.B. Deppe, D.G.
IEEE J. Select. Topics Quantum Electron., 6, 452 (2000)
- Quantum-dot heterostructure lasers
Ledentsov, N.N. Grundmann, M. Heinrichsdorff, F. Bimberg, D. Ustinov, V.M. Zhukov, A.E. Maximov, M.V. Alferov, Zh.I. Lott, J.A.
IEEE J. Select. Topics Quantum Electron., 6, 439 (2000)
- High-speed modulation and switching characteristics of In(Ga)As-Al(Ga)As self-organized quantum-dot lasers
Bhattacharya, P. Klotzkin, D. Qasaimeh, O. Zhou, W. Krishna, S. Zhu, D.
IEEE J. Select. Topics Quantum Electron., 6, 426 (2000)
- The influence of quantum-well composition on the performance of quantum dot lasers using InAs-InGaAs dots-in-a-well (DWELL) structures
Liu, G.T. Stintz, A. Li, H. Newell, T.C. Gray, A.L. Varangis, P.M. Malloy, K.J. Lester, L.F.
IEEE J. Quantum Electron., 36, 1272 (2000)
- Longitudinal spatial hole burning in a quantum-dot laser
L. V. Asryan and R. A. Suris
IEEE J. Quantum Electron., 36, 1151 (2000)
- InAs-InGaAs quantum dot VCSELs on GaAs substrates emitting at 1.3 μm
Lott, J.A. Ledentsov, N.N. Ustinov, V.M. Maleev, N.A. Zhukov, A.E. Kovsh, A.R. Maximov, M.V. Volovik, B.V. Alferov, Zh.I. Bimberg, D.
Electron. Lett., 36, 1384 (2000)