2001 year
- Carrier Photoexcitation from Levels in Quantum Dots to States of the Continuum in Lasing
L. V. Asryan and R. A. Suris
Semicond., 35, 343 (2001)
- Nobel Lecture: The double heterostructure concept and its applications in physics, electronics, and technology
Zhores I. Alferov
Rev. Mod. Phys. 73, 767 (2001)
- 980 nm Quantum Dot Lasers with Very Small Threshold Current Densities
F. Klopf, J.P. Reithmaier, A. Forchel
Phys. Stat. Sol. (b), 224, 845 (2001)
- Gain Characteristics of Self-Assembled InAs/GaAs Quantum Dots
M. Arzberger, G. Böhm, M.C. Amann, G. Abstreiter
Phys. Stat. Sol. (b), 224, 827 (2001)
- Room-temperature operation of InAs quantum-dash lasers on InP (001)
Wang, R.H. Stintz, A. Varangis, P.M. Newell, T.C. Li, H. Malloy, K.J. Lester, L.F.
IEEE J. Phot. Technol. Lett., 13, 767 (2001)
- High-temperature operating 1.3-μm quantum-dot lasers for telecommunication applications
Klopf, F. Krebs, R. Reithmaier, J.P. Forchel, A.
IEEE J. Phot. Technol. Lett., 13, 764 (2001)
- Gain and threshold characteristics of long wavelength lasers based on InAs/GaAs quantum dots formed by activated alloy phase separation
M. V. Maximov, L. V. Asryan, Yu. M. Shernyakov, A. F. Tsatsul'nikov, I. N. Kaiander, V. V. Nikolaev, A. R. Kovsh, S. S. Mikhrin, V. M. Ustinov, A. E. Zhukov, Zh. I. Alferov, N. N. Ledenstov, and D. Bimberg
IEEE J. Quantum Electron., 37, 676 (2001)
- Effect of excited-state transitions on the threshold characteristics of a quantum dot laser
L. V. Asryan, M. Grundmann, N. N. Ledentsov, O. Stier, R. A. Suris, and D. Bimberg
IEEE J. Quantum Electron., 37, 418 (2001)
- Tunneling-injection quantum-dot laser: ultrahigh temperature stability
L. V. Asryan and S. Luryi
IEEE J. Quantum Electron., 37, 905 (2001)
- The Double Heterostructure: The Concept and its Applications in Physics, Electronics, and Technology (Nobel Lecture)
Zhores I. Alferov
ChemPhysChem, 2, 500 (2001)