1995 year
- Interband second-harmonic generation in Zn1-xCdxSe/ZnSe strained quantum wells
Vittorio Pellegrini, Andrea Parlangeli, Marco Börger, Rosen D. Atanasov, Fabio Beltram, Lia Vanzetti and Alfonso Franciosi
Phys. Rev. B 52, R5527 (1995)
- Exciton localization by a fractional monolayer of ZnTe inserted in a wide CdTe quantum well
Q. X. Zhao, N. Magnea, and J. L. Pautrat
Phys. Rev. B 52, 16612 (1995)
- Structural and physical properties of mercury
D. Schikora, Th. Widmer, K. Lischka, P. Schäfer, G. Machel, S. Luther, and M. von Ortenberg
Phys. Rev. B 52, 12072 (1995)
- Hole subbands in strained quantum-well semiconductors in [hhk] directions
Guy Fishman
Phys. Rev. B 52, 11132 (1995)
- Zn(S,Se)-based superlattices and quantum wells: Band offsets, excitons, linear and nonlinear optical properties
N. Tomassini, A. D
Phys. Rev. B 52, 11113 (1995)
- Carrier effective masses in symmetrically strained (GaIn)As/Ga(PAs) multiple-quantum-well structures
M. Volk, S. Lutgen, T. Marschner, W. Stolz, E. O. Göbel, P. C. M. Christianen and J. C. Maan
Phys. Rev. B 52, 11096 (1995)
- Intersubband transitions in InAs/AlSb quantum wells studied by resonant Raman scattering
J. Wagner, J. Schmitz, F. Fuchs, J. D. Ralston, P. Koidl and D. Richards
Phys. Rev. B 51, 9786 (1995)
- Zeeman splitting and g factor of heavy-hole excitons in InxGa1-xAs/GaAs quantum wells
N. J. Traynor, R. T. Harley and R. J. Warburton
Phys. Rev. B 51, 7361 (1995)
- Heavy- and light-hole band crossing in a variable-strain quantum-well heterostructure
Weimin Zhou, H. Shen, J. Pamulapati, P. Cooke, and M. Dutta
Phys. Rev. B 51, 5461 (1995)
- Excitonic properties of Zn1-xCdxSe/ZnSe strained quantum wells
V. Pellegrini, R. Atanasov, A. Tredicucci, F. Beltram, C. Amzulini, L. Sorba, L. Vanzetti, and A. Franciosi
Phys. Rev. B 51, 5171 (1995)
- Theoretical and experimental investigations of the electronic structure for selectively delta -doped strained InxGa1-xAs/GaAs quantum wells
Mao
Phys. Rev. B 51, 5038 (1995)
- Strain and piezoelectric fields in arbitrarily oriented semiconductor heterostructures. I. Multiple quantum wells
Liberato De Caro and Leander Tapfer
Phys. Rev. B 51, 4374 (1995)
- Energy gaps in strained In1-xGaxAs/In1-yGayAszP1-z quantum wells grown on (001) InP
R. Weihofen, G. Weiser, Ch. Starck, and R. J. Simes
Phys. Rev. B 51, 4296 (1995)
- Optical measurements of electronic band structure in tensile strain (Ga,In)P-(Al,Ga,In)P quantum wells
Martin D. Dawson, Geoffrey Duggan and D. J. Arent
Phys. Rev. B 51, 17660 (1995)
- Theoretical study of strained thin quantum wells grown on vicinal surfaces
J. A. Porto and J. Sánchez
Phys. Rev. B 51, 14352 (1995)
- Orientation as a key parameter in the valence-subband-structure engineering of quantum wells
G. Shechter, L. D. Shvartsman, and J. E. Golub
Phys. Rev. B 51, 10857 (1995)
- Hole relaxation in p-type InxGa1-xAs/AlyGa1-yAs quantum wells observed by ultrafast midinfrared spectroscopy
Z. Xu, P. M. Fauchet, C. W. Rella, B. A. Richman, H. A. Schwettman and G. W. Wicks
Phys. Rev. B 51, 10631 (1995)