Auger processe
- A numerical calculation of auger recombination coefficients for InGaAsP/InP quantum well heterostructures
N. A. Gun
Semiconductors, 2000, Volume 34, Number 4, 04480452
- Intralayer and interlayer energy transfer from excitonic states into the Mn 3d5 shell in diluted magnetic semiconductor structures
H. Falk, J. Hübner, P. J. Klar, and W. Heimbrodt
Phys. Rev. B 68, 165203 (2003)
- Statistical energy distribution model for the decay of hollow atoms formed in collisions of slow (v<1 a.u.) highly charged ions and C60
J. Bernard, R. Brédy, L. Chen, S. Martin, and A. Salmoun
Phys. Rev. A 68, 053203 (2003)
- Liouville master equation for multielectron dynamics: Neutralization of highly charged ions near a LiF surface
L. Wirtz, C. O. Reinhold, C. Lemell, and J. Burgdörfer
Phys. Rev. A 67, 012903 (2003)
- Time-resolved spectroscopy of (Al,Ga,In)N based quantum wells: Localization effects and effective reduction of internal electric fields
P. Lefebvre, S. Anceau, P. Valvin, T. Taliercio, L. Konczewicz, T. Suski, S. P. epkowski, H. Teisseyre, H. Hirayama and Y. Aoyagi
Phys. Rev. B 66, 195330 (2002)
- Enhancement of spontaneous recombination rate in a quantum well by resonant surface plasmon coupling
Arup Neogi, Chang-Won Lee, Henry O. Everitt, Takamasa Kuroda, Atsushi Tackeuchi and Eli Yablonovitch
Phys. Rev. B 66, 153305 (2002)
- Auger recombination in semiconductor quantum wells in a magnetic field
Georgii G. Samsonidze and Georgy G. Zegrya
Phys. Rev. B 63, 075317 (2001)
- Energy transfer of excitons between quantum wells separated by a wide barrier
S. K. Lyo
Phys. Rev. B 62, 13641 (2000)
- Suppression of Auger recombination in long-wavelength quantum well W-structure lasers
P. C. Findlay, J-P. R. Wells, I. V. Bradley, J. G. Crowder, C. R. Pidgeon, B. N. Murdin, M. J. Yang, I. Vurgaftman, and J. R. Meyer
Phys. Rev. B 62, 10297 (2000)
- Zeeman-gap anomaly in photoluminescence from a two-dimensional electron gas in CdTe/(Cd, Mg)Te quantum wells
S. Takeyama, G. Karczewski, T. Wojtowicz, J. Kossut, H. Kunimatsu, K. Uchida, and N. Miura
Phys. Rev. B 59, 7327 (1999)
- Time-resolved photoluminescence as a probe of internal electric fields in GaN-(GaAl)N quantum wells
Pierre Lefebvre, Jacques Allègre, Bernard Gil, Henry Mathieu, Nicolas Grandjean, Mathieu Leroux, Jean Massies and Pierre Bigenwald
Phys. Rev. B 59, 15363 (1999)
- Intersubband electron-electron scattering in asymmetric quantum wells designed for far-infrared emission
P. Kinsler, P. Harrison, and R. W. Kelsall
Phys. Rev. B 58, 4771 (1998)
- Auger recombination in semiconductor quantum wells
Anatoli S. Polkovnikov and Georgy G. Zegrya
Phys. Rev. B 58, 4039 (1998)
- Interface-induced conversion of infrared to visible light at semiconductor interfaces
F. A. J. M. Driessen, H. M. Cheong, A. Mascarenhas, S. K. Deb, P. R. Hageman, G. J. Bauhuis, and L. J. Giling
Phys. Rev. B 54, R5263 (1996)
- Thermal carrier emission from a semiconductor quantum well
S. Weber, W. Limmer, K. Thonke, R. Sauer, K. Panzlaff, G. Bacher, G. Bacher
Phys. Rev. B 52, 14739 (1995)
- Recombination processes and photoluminescence intensity in quantum wells under steady-state and transient conditions
O. Brandt, K. Kanamoto, M. Gotoda, T. Isu, and N. Tsukada
Phys. Rev. B 51, 7029 (1995)
- Temperature sensitivity of Auger-recombination effects in compressively strained InxGa1-xAs/InxGa1-xAs1-yPy quantum-well lasers
Wayne W. Lui, Takayuki Yamanaka, Yuzo Yoshikuni, Shunji Seki, and Kiyoyuki Yokoyama
Phys. Rev. B 48, 8814 (1993)
- Auger recombination within Landau levels in a two-dimensional electron gas
M. Potemski, R. Stepniewski, J. C. Maan, G. Martinez, P. Wyder, and B. Etienne
Phys. Rev. Lett. 66, 2239 (1991)
- Quasi-Fermi-levels in quantum-well photoluminescence
G. D. Mahan and L. E. Oliveira
Phys. Rev. B 44, 3150 (1991)
- Kinetics of radiative recombination in quantum wells
B. K. Ridley
Phys. Rev. B 41, 12190 (1990)