2002 year
- Optical reflectance study of the wetting layers in (In, Ga)As self-assembled quantum dot growth on GaAs (001)
Takashi Kita, Osamu Wada, T. Nakayama AND M. Murayama
Phys. Rev. B 66, 195312 (2002)
- Quantum dot origin of luminescence in InGaN-GaN structures
I. L. Krestnikov, N. N. Ledentsov, A. Hoffmann, D. Bimberg, A. V. Sakharov, W. V. Lundin, A. F. Tsatsul'nikov, A. S. Usikov, Zh. I. Alferov, Yu. G. Musikhin and D. Gerthsen
Phys. Rev. B 66, 155310 (2002)
- Role of two- and three-dimensional surface structures in InAs-GaAs(001) quantum dot nucleation
T. J. Krzyzewski, P. B. Joyce, G. R. Bell, and T. S. Jones
Phys. Rev. B 66, 121307(R) (2002)
- Imaging of the electronic states of self-assembled InxGa1
T. K. Johal, R. Rinaldi, A. Passaseo, R. Cingolani, A. Vasanelli, R. Ferreira, and G. Bastard
Phys. Rev. B 66, 075336 (2002)
- Optical properties of bilayer InAs/GaAs quantum dot structures: Influence of strain and surface morphology
P. B. Joyce, E. C. Le Ru, T. J. Krzyzewski, G. R. Bell, R. Murray and T. S. Jones
Phys. Rev. B 66, 075316 (2002)
- Stability of InAs quantum dots
Ch. Heyn
Phys. Rev. B 66, 075307 (2002)
- Proposed experiments to grow nanoscale p-n junctions and modulation-doped quantum wires and dots
V. Narayan and M. Willander
Phys. Rev. B 65, 125330 (2002)
- Photoluminescence of self-assembled InSb quantum dots grown on GaSb as a function of excitation power, temperature, and magnetic field
E. Alphandéry, R. J. Nicholas, N. J. Mason, S. G. Lyapin, and P. C. Klipstein
Phys. Rev. B 65, 115322 (2002)