2002 year
- Optically Driven Spin Memory in n-Doped InAs-GaAs Quantum Dots
S. Cortez, O. Krebs, S. Laurent, M. Senes, X. Marie, P. Voisin, R. Ferreira, G. Bastard, J-M. Gérard, and T. Amand
Phys. Rev. Lett. 89, 207401 (2002)
- Long dephasing time and high-temperature conductance fluctuations in an open InGaAs quantum dot
B. Hackens, F. Delfosse, S. Faniel, C. Gustin, H. Boutry, X. Wallart, S. Bollaert, A. Cappy, and V. Bayot
Phys. Rev. B 66, 241305(R) (2002)
- Changes in luminescence intensities and carrier dynamics induced by proton irradiation in InxGa1
S. Marcinkeviius, J. Siegert, R. Leon, B. echaviius, B. Magness, W. Taylor and C. Lobo
Phys. Rev. B 66, 235314 (2002)
- Hole emission processes in InAs/GaAs self-assembled quantum dots
W. -H. Chang, W. Y. Chen, T. M. Hsu, N. -T. Yeh and J. -I. Chyi
Phys. Rev. B 66, 195337 (2002)
- Acceptor-induced threshold energy for the optical charging of InAs single quantum dots
E. S. Moskalenko, K. F. Karlsson, P. O. Holtz, B. Monemar, W. V. Schoenfeld, J. M. Garcia, and P. M. Petroff
Phys. Rev. B 66, 195332 (2002)
- Optical reflectance study of the wetting layers in (In, Ga)As self-assembled quantum dot growth on GaAs (001)
Takashi Kita, Osamu Wada, T. Nakayama AND M. Murayama
Phys. Rev. B 66, 195312 (2002)
- Hyperfine-mediated transitions between a Zeeman split doublet in GaAs quantum dots: The role of the internal field
Sigurdur I. Erlingsson and Yuli V. Nazarov
Phys. Rev. B 66, 155327 (2002)
- Quantum dot origin of luminescence in InGaN-GaN structures
I. L. Krestnikov, N. N. Ledentsov, A. Hoffmann, D. Bimberg, A. V. Sakharov, W. V. Lundin, A. F. Tsatsul'nikov, A. S. Usikov, Zh. I. Alferov, Yu. G. Musikhin and D. Gerthsen
Phys. Rev. B 66, 155310 (2002)
- Role of two- and three-dimensional surface structures in InAs-GaAs(001) quantum dot nucleation
T. J. Krzyzewski, P. B. Joyce, G. R. Bell, and T. S. Jones
Phys. Rev. B 66, 121307(R) (2002)
- Picosecond nonlinear relaxation of photoinjected carriers in a single GaAs/Al0.3Ga0.7As quantum dot
T. Kuroda, S. Sanguinetti, M. Gurioli, K. Watanabe, F. Minami, and N. Koguchi
Phys. Rev. B 66, 121302(R) (2002)
- Polar interface vibrations in GaN/AlN quantum dots: Essential effects of crystal anisotropy
D. A. Romanov, V. V. Mitin and M. A. Stroscio
Phys. Rev. B 66, 115321 (2002)
- Defect states in red-emitting InxAl1
R. Leon, J. Ibáñez, S. Marcinkeviius, J. Siegert, T. Paskova, B. Monemar, S. Chaparro, C. Navarro, S. R. Johnson, and Y.-H. Zhang
Phys. Rev. B 66, 085331 (2002)
- Rabi oscillations in the excitonic ground-state transition of InGaAs quantum dots
P. Borri, W. Langbein, S. Schneider, U. Woggon, R. L. Sellin, D. Ouyang, and D. Bimberg
Phys. Rev. B 66, 081306(R) (2002)
- Imaging of the electronic states of self-assembled InxGa1
T. K. Johal, R. Rinaldi, A. Passaseo, R. Cingolani, A. Vasanelli, R. Ferreira, and G. Bastard
Phys. Rev. B 66, 075336 (2002)
- Optical properties of bilayer InAs/GaAs quantum dot structures: Influence of strain and surface morphology
P. B. Joyce, E. C. Le Ru, T. J. Krzyzewski, G. R. Bell, R. Murray and T. S. Jones
Phys. Rev. B 66, 075316 (2002)
- Stability of InAs quantum dots
Ch. Heyn
Phys. Rev. B 66, 075307 (2002)
- Manipulation of the homogeneous linewidth of an individual In(Ga)As quantum dot
R. Oulton, J. J. Finley, A. D. Ashmore, I. S. Gregory, D. J. Mowbray, M. S. Skolnick, M. J. Steer, San-Lin Liew, M. A. Migliorato, and A. J. Cullis
Phys. Rev. B 66, 045313 (2002)
- Polarization-correlated photon pairs from a single quantum dot
Charles Santori, David Fattal, Matthew Pelton, Glenn S. Solomon, and Yoshihisa Yamamoto
Phys. Rev. B 66, 045308 (2002)
- Enhanced light emission of InxGa1
T. D. Happ, I. I. Tartakovskii, V. D. Kulakovskii, J.-P. Reithmaier, M. Kamp, and A. Forchel
Phys. Rev. B 66, 041303(R) (2002)
- Effect of isotropic versus anisotropic elasticity on the electronic structure of cylindrical InP/In0.49Ga0.51P self-assembled quantum dots
M. Tadi, F. M. Peeters, and K. L. Janssens
Phys. Rev. B 65, 165333 (2002)
- Ultrafast carrier activation in resonantly excited 1.3
F. Quochi, M. Dinu, J. Shah, L. N. Pfeiffer, K. W. West, and P. M. Platzman
Phys. Rev. B 65, 161308(R) (2002)
- Photoluminescence of self-assembled InSb quantum dots grown on GaSb as a function of excitation power, temperature, and magnetic field
E. Alphandéry, R. J. Nicholas, N. J. Mason, S. G. Lyapin, and P. C. Klipstein
Phys. Rev. B 65, 115322 (2002)
- Resonant excitation study of ultrasharp emission lines in ordered GaxIn1
B. Fluegel, S. Smith, Y. Zhang, A. Mascarenhas, J. F. Geisz, and J. M. Olson
Phys. Rev. B 65, 115320 (2002)
- Anharmonicity-induced polaron relaxation in GaAs/InAs quantum dots
L. Jacak, J. Krasnyj, D. Jacak, and P. Machnikowski
Phys. Rev. B 65, 113305 (2002)
- Photoluminescence of a single InAs quantum dot molecule under applied electric field
I. Shtrichman, C. Metzner, B. D. Gerardot, W. V. Schoenfeld, and P. M. Petroff
Phys. Rev. B 65, 081303(R) (2002)
- Time-resolved spectroscopy of multiexcitonic decay in an InAs quantum dot
Charles Santori, Glenn S. Solomon, Matthew Pelton, and Yoshihisa Yamamoto
Phys. Rev. B 65, 073310 (2002)
- Efficient acoustic phonon broadening in single self-assembled InAs/GaAs quantum dots
C. Kammerer, G. Cassabois, C. Voisin, C. Delalande, Ph. Roussignol, A. Lemaître and J. M. Gérard
Phys. Rev. B 65, 033313 (2002)
- Room-temperature operation of InAs quantum-dash lasers on InP (001)
Wang, R.H. Stintz, A. Varangis, P.M. Newell, T.C. Li, H. Malloy, K.J. Lester, L.F.
IEEE J. Phot. Technol. Lett., 13, 767 (2001)
- Ground-state emission and gain in ultralow-threshold InAs-InGaAs quantum-dot lasers
Eliseev, P.G. Li, H. Liu, T. Newell, T.C. Lester, L.F. Malloy, K.J.
IEEE J. Select. Topics Quantum Electron., 7, 135 (2001)