**Determination of the composition and strains in GexSi1− x -based nanostructures from Raman spectroscopy data with consideration of the contribution of the heterointerface**

V. A. Volodin, M. D. Efremov, A. I. Yakimov, G. Yu. Mikhalev, A. I. Nikiforov and A. V. Dvurechenskiĭ

Semiconductors, 2007, Volume 41, Number 8, 09300934**GaAs in GaSb: Strained nanostructures for mid-infrared optoelectronics**

V. A. Solov

Semiconductors, 2002, Volume 36, Number 7, 08160820**InGaAs/InP heterostructures with strained quantum wells and quantum dots (λ=1.5**

Z. N. Sokolova, D. A. Vinokurov, I. S. Tarasov, N. A. Gun

Semiconductors, 1999, Volume 33, Number 9, 10071009**Efficient Single Photon Detection by Quantum Dot Resonant Tunneling Diodes**

J. C. Blakesley, P. See, A. J. Shields, B. E. Kardynal, P. Atkinson, I. Farrer, and D. A. Ritchie

Phys. Rev. Lett.**94**, 067401 (2005)**Derivation of built-in polarization potentials in nitride-based semiconductor quantum dots**

D. P. Williams, A. D. Andreev, E. P. O\'Reilly, and D. A. Faux

Phys. Rev. B**72**, 235318 (2005)**Band-edge diagrams for strained III**

C. E. Pryor, M.-E. Pistol

Phys. Rev. B**72**, 205311 (2005)**Size dependency of strain in arbitrary shaped anisotropic embedded quantum dots due to nonlocal dispersive effects**

X. Zhang and P. Sharma

Phys. Rev. B**72**, 195345 (2005)**Singlet-triplet splitting, correlation, and entanglement of two electrons in quantum dot molecules**

Lixin He, Gabriel Bester, and Alex Zunger

Phys. Rev. B**72**, 195307 (2005)**Tight-binding model for semiconductor nanostructures**

S. Schulz and G. Czycholl

Phys. Rev. B**72**, 165317 (2005)**Deformation profile in GaN quantum dots: Medium-energy ion scattering experiments and theoretical calculations**

D. Jalabert, J. Coraux, H. Renevier, B. Daudin, M.-H. Cho, K. B. Chung, D. W. Moon, J. M. Llorens, N. Garro, A. Cros, and A. García-Cristóbal

Phys. Rev. B**72**, 115301 (2005)**Shape, strain, and ordering of lateral InAs quantum dot molecules**

B. Krause, T. H. Metzger, A. Rastelli, R. Songmuang, S. Kiravittaya, and O. G. Schmidt

Phys. Rev. B**72**, 085339 (2005)**Strain effects on individual quantum dots: Dependence of cap layer thickness**

J. Persson, U. Håkanson, M. K.-J. Johansson, L. Samuelson, and M.-E. Pistol

Phys. Rev. B**72**, 085302 (2005)**Electronic asymmetry in self-assembled quantum dot molecules made of identical InAs∕GaAs quantum dots**

Lixin He, Gabriel Bester, and Alex Zunger

Phys. Rev. B**72**, 081311 (2005)**Mapping quantum dot-in-well structures on the nanoscale using the plasmon peak in electron energy loss spectra**

A. M. Sánchez, R. Beanland, M. H. Gass, A. J. Papworth, P. J. Goodhew, and M. Hopkinson

Phys. Rev. B**72**, 075339 (2005)**Short-range order structures of self-assembled Ge quantum dots probed by multiple-scattering extended x-ray absorption fine structure**

Zhihu Sun, Shiqiang Wei, A. V. Kolobov, H. Oyanagi, and K. Brunner

Phys. Rev. B**71**, 245334 (2005)**Effects of strain and confinement on the emission wavelength of InAs quantum dots due to a GaAs1−xNx capping layer**

O. Schumann, S. Birner, M. Baudach, L. Geelhaar, H. Eisele, L. Ivanova, R. Timm, A. Lenz, S. K. Becker, M. Povolotskyi, M. Dähne, G. Abstreiter, and H. Riechert

Phys. Rev. B**71**, 245316 (2005)**Tuning of g -factor in self-assembled In(Ga)As quantum dots through strain engineering**

T. Nakaoka, T. Saito, J. Tatebayashi, S. Hirose, T. Usuki, N. Yokoyama, and Y. Arakawa

Phys. Rev. B**71**, 205301 (2005)**Reversed quantum-confined Stark effect and an asymmetric band alignment observed for type-II Si/Ge quantum dots**

M. Larsson, P. O. Holtz, A. Elfving, G. V. Hansson, and W.-X. Ni

Phys. Rev. B**71**, 113301 (2005)**Hole spin relaxation in semiconductor quantum dots**

C. Lü, J. L. Cheng, and M. W. Wu

Phys. Rev. B**71**, 075308 (2005)**Strain-Induced Quantum Ring Hole States in a Gated Vertical Quantum Dot**

Jun Liu, A. Zaslavsky, and L. B. Freund

Phys. Rev. Lett.**89**, 096804 (2002)**Single-hole tunneling into a strain-induced SiGe quantum ring**

Jun Liu, A. Zaslavsky, B. R. Perkins, C. Aydin, and L. B. Freund

Phys. Rev. B 66, 161304(R) (2002)**Optical properties of bilayer InAs/GaAs quantum dot structures: Influence of strain and surface morphology**

P. B. Joyce, E. C. Le Ru, T. J. Krzyzewski, G. R. Bell, R. Murray and T. S. Jones

Phys. Rev. B**66**, 075316 (2002)**Effect of isotropic versus anisotropic elasticity on the electronic structure of cylindrical InP/In0.49Ga0.51P self-assembled quantum dots**

M. Tadi, F. M. Peeters, and K. L. Janssens

Phys. Rev. B**65**, 165333 (2002)**Self-consistent simulations of a four-gated vertical quantum dot**

Philippe Matagne and Jean-Pierre Leburton

Phys. Rev. B**65**, 155311 (2002)**Self-Assembled Quantum Dots: Crossover from Kinetically Controlled to Thermodynamically Limited Growth**

M. Meixner, E. Schöll, V. A. Shchukin and D. Bimberg

Phys. Rev. Lett.**87**, 236101 (2001)**Critical coverage for strain-induced formation of InAs quantum dots**

Ch. Heyn

Phys. Rev. B**64**, 165306 (2001)**Electronic structure consequences of In/Ga composition variations in self-assembled InxGa1**

J. Shumway, A. J. Williamson, Alex Zunger, A. Passaseo, M. DeGiorgi, R. Cingolani, M. Catalano and P. Crozier

Phys. Rev. B**64**, 125302 (2001)**Tunneling of zero-dimensional excitons in a single pair of correlated quantum dots**

J. Seufert, M. Obert, G. Bacher, A. Forchel, T. Passow, K. Leonardi, and D. Hommel

Phys. Rev. B**64**, 121303 (2001)**Strain engineering of self-organized InAs quantum dots**

F. Guffarth, R. Heitz, A. Schliwa, O. Stier, N. N. Ledentsov, A. R. Kovsh, V. M. Ustinov, and D. Bimberg

Phys. Rev. B**64**, 085305 (2001)**Spatial carrier-carrier correlations in strain-induced quantum dots**

M. Braskén, M. Lindberg, D. Sundholm and J. Olsen

Phys. Rev. B**64**, 035312 (2001)**Electron-hole alignment in InAs/GaAs self-assembled quantum dots: Effects of chemical composition and dot shape**

Weidong Sheng and Jean-Pierre Leburton

Phys. Rev. B**63**, 161301 (2001)**Determination of strain fields and composition of self-organized quantum dots using x-ray diffraction**

I. Kegel, T. H. Metzger, A. Lorke, J. Peisl, J. Stangl, G. Bauer, K. Nordlund, W. V. Schoenfeld and P. M. Petroff

Phys. Rev. B**63**, 035318 (2001)**Piezoelectric potentials and carrier lifetimes in strain-induced quantum well dots**

R. Virkkala, K. Maijala, and J. Tulkki

Phys. Rev. B**62**, 6932 (2000)**Electron-Hole Correlation in Quantum Dots under a High Magnetic Field (up to 45 T)**

R. Cingolani, R. Rinaldi, H. Lipsanen, M. Sopanen, R. Virkkala, K. Maijala, J. Tulkki, J. Ahopelto, K. Uchida, N. Miura and Y. Arakawa

Phys. Rev. Lett.**83**, 4832 (1999)**Strain Induced Vertical and Lateral Correlations in Quantum Dot Superlattices**

V. Holý, G. Springholz, M. Pinczolits, and G. Bauer

Phys. Rev. Lett.**83**, 356 (1999)**Excited states and selection rules in self-assembled InAs/GaAs quantum dots**

I. E. Itskevich, M. S. Skolnick, D. J. Mowbray, I. A. Trojan. S. G. Lyapin, L. R. Wilson, M. J. Steer, M. Hopkinson, L. Eaves and P. C. Main

Phys. Rev. B**60**, R2185 (1999)**Electronic and optical properties of strained quantum dots modeled by 8-band k**

O. Stier, M. Grundmann, and D. Bimberg

Phys. Rev. B**59**, 5688 (1999)**Gain and linewidth enhancement factor in InAs quantum-dot laser diodes**

Newell, T.C. Bossert, D.J. Stintz, A. Fuchs, B. Malloy, K.J. Lester, L.F.

IEEE J. Phot. Technol. Lett.,**11**, 1527 (1999)**Extremely low room-temperature threshold current density diode lasers using InAs dots in In0.15Ga0.85As quantum well**

Liu, G. Stintz, A. Li, H. Malloy, K.J. Lester, L.F.

Electron. Lett.,**35**, 1163 (1999)**Quantum Wires Formed from Coupled InAs/GaAs Strained Quantum Dots**

Craig Pryor

Phys. Rev. Lett.**80**, 3579 (1998)**Strain-Induced Quenching of Optical Transitions in Capped Self-Assembled Quantum Dot Structures**

J. A. Prieto, G. Armelles, T. Utzmeier, F. Briones, J. C. Ferrer, F. Peiró, A. Cornet, and J. R. Morante

Phys. Rev. Lett.**80**, 1094 (1998)**Energy levels in self-assembled InAs/GaAs quantum dots above the pressure-induced Gamma -X crossover**

I. E. Itskevich, S. G. Lyapin, I. A. Troyan, P. C. Klipstein, L. Eaves, P. C. Main, and M. Henini

Phys. Rev. B**58**, R4250 (1998)**Raman study of interface modes subjected to strain in InAs/GaAs self-assembled quantum dots**

Yu. A. Pusep, G. Zanelatto, S. W. da Silva, J. C. Galzerani, P. P. Gonzalez-Borrero, A. I. Toropov and P. Basmaji

Phys. Rev. B**58**, R1770 (1998)**Temperature dependence of carrier relaxation in strain-induced quantum dots**

M. Braskén, M. Lindberg, M. Sopanen, H. Lipsanen and J. Tulkki

Phys. Rev. B**58**, R15993 (1998)**Coplanar and grazing incidence x-ray-diffraction investigation of self-organized SiGe quantum dot multilayers**

V. Holý, A. A. Darhuber, J. Stangl, S. Zerlauth, F. Schäffler, G. Bauer, N. Darowski, D. Lübbert, U. Pietsch and I. Vávra

Phys. Rev. B**58**, 7934 (1998)**Effect of interfacial states on the binding energies of electrons and holes in InAs/GaAs quantum dots**

A. J. Williamson and Alex Zunger

Phys. Rev. B**58**, 6724 (1998)**Elastic relaxation of dry-etched Si/SiGe quantum dots**

A. A. Darhuber, T. Grill, J. Stangl, G. Bauer, D. J. Lockwood, J.-P. Noël, P. D. Wang and C. M. Sotomayor Torres

Phys. Rev. B**58**, 4825 (1998)**Influence of surface stress on the equilibrium shape of strained quantum dots**

N. Moll, M. Scheffler and E. Pehlke

Phys. Rev. B**58**, 4566 (1998)**Electronic states in strained cleaved-edge-overgrowth quantum wires and quantum dots**

M. Grundmann, O. Stier, and D. Bimberg

Phys. Rev. B**58**, 10557 (1998)**Prediction of a strain-induced conduction-band minimum in embedded quantum dots**

A. J. Williamson, Alex Zunger and A. Canning

Phys. Rev. B**57**, R4253 (1998)**Optical properties of Ge self-organized quantum dots in Si**

C. S. Peng*, Q. Huang, W. Q. Cheng, J. M. Zhou, Y. H. Zhang, T. T. Sheng and C. H. Tung

Phys. Rev. B**57**, 8805 (1998)**Eight-band calculations of strained InAs/GaAs quantum dots compared with one-, four-, and six-band approximations**

Craig Pryor

Phys. Rev. B**57**, 7190 (1998)**Inhomogeneous strain relaxation in etched quantum dots and wires: From strain distributions to piezoelectric fields and band-edge profiles**

Y. M. Niquet, C. Priester, C. Gourgon and H. Mariette

Phys. Rev. B**57**, 14850 (1998)**Strain-energy distribution and electronic structure of InAs pyramidal quantum dots with uncovered surfaces: Tight-binding analysis**

T. Saito, J. N. Schulman, and Y. Arakawa

Phys. Rev. B**57**, 13016 (1998)**Strain distribution and electronic spectra of InAs/GaAs self-assembled dots: An eight-band study**

Hongtao Jiang and Jasprit Singh

Phys. Rev. B**56**, 4696 (1997)**Electronic structure of strained InP/Ga0.51In0.49P quantum dots**

Craig Pryor, M-E. Pistol, and L. Samuelson

Phys. Rev. B**56**, 10404 (1997)**Self-Organization in Growth of Quantum Dot Superlattices**

J. Tersoff, C. Teichert and M. G. Lagally

Phys. Rev. Lett.**76**, 1675 (1996)**Electronic structure of InAs/GaAs self-assembled quantum dots**

M. A. Cusack, P. R. Briddon, and M. Jaros

Phys. Rev. B**54**, R2300 (1996)**Near-field optical spectroscopy of localized excitons in strained CdSe quantum dots**

F. Flack, N. Samarth, V. Nikitin, P. A. Crowell, J. Shi, J. Levy, and D. D. Awschalom

Phys. Rev. B**54**, R17312 (1996)**Direct formation of vertically coupled quantum dots in Stranski-Krastanow growth**

N. N. Ledentsov, V. A. Shchukin, M. Grundmann, N. Kirstaedter, J. Böhrer, O. Schmidt, D. Bimberg, V. M. Ustinov, A. Yu. Egorov, A. E. Zhukov, P. S. Kop

Phys. Rev. B**54**, 8743 (1996)**Effective-mass theory for InAs/GaAs strained coupled quantum dots**

Shu

Phys. Rev. B**54**, 11575 (1996)**Simulation model for self-ordering of strained islands in molecular-beam epitaxy**

T. T. Ngo, T. T. Ngo, H. Sakaki and J. L. Merz

Phys. Rev. B**53**, 9618 (1996)**Slow relaxation of excited states in strain-induced quantum dots**

T. H. Gfroerer, M. D. Sturge, K. Kash, J. A. Yater, A. S. Plaut, P. S. D. Lin, L. T. Florez, J. P. Harbison, S. R. Das and L. Lebrun

Phys. Rev. B**53**, 16474 (1996)**Electronic structure and energy relaxation in strained InAs/GaAs quantum pyramids**

Grundmann M., Heitz R., Ledentsov N., Stier O., Bimberg D. Ustinov V. M., Kop'ev P. S., Alferov Zh. I., Ruvimov S. S., Werner P., Gösele U.Heydenreich J.

Superlatt. and Microstruct.,**19**, 81 (1995)**Elastic strains in GaAs/AlAs quantum dots studied by high-resolution x-ray diffraction**

V. Holý, A. A. Darhuber, G. Bauer, P. D. Wang, Y. P. Song, C. M. Sotomayor Torres, and M. C. Holland

Phys. Rev. B**52**, 8348 (1995)**InAs/GaAs pyramidal quantum dots: Strain distribution, optical phonons, and electronic structure**

M. Grundmann, O. Stier, and D. Bimberg

Phys. Rev. B**52**, 11969 (1995)**Temperature dependence of luminescence efficiency, exciton transfer, and exciton localization in GaAs/AlxGa1-xAs quantum wires and quantum dots**

Yong Zhang, M. D. Sturge, K. Kash, B. P. van der Gaag, A. S. Gozdz, L. T. Florez, and J. P. Harbison

Phys. Rev. B**51**, 13303 (1995)**State mixing in InAs/GaAs quantum dots at the pressure-induced Gamma -X crossing**

G. H. Li, A. R. Goñi, K. Syassen, O. Brandt, and K. Ploog

Phys. Rev. B**50**, 18420 (1994)**Lasing action of Ga0.67In0.33As/GaInAsP/InP tensile-strained quantum-box laser**

Hirayama, H. Matsunaga, K. Asada, M. Suematsu, Y.

Electron. Lett.,**30**, 142 (1994)**Optical and structural properties of metalorganic-vapor-phase-epitaxy-grown InAs quantum wells and quantum dots in InP**

R. Leonelli, C. A. Tran, J. L. Brebner, J. T. Graham, R. Tabti, R. A. Masut and S. Charbonneau

Phys. Rev. B**48**, 11135 (1993)### 2004

### 2003