1995 year
- Exciton/biexciton energies in rectangular GaAs/AlxGa1-xAs quantum-well wires including finite Al-graded band offsets with application to third-order optical susceptibilities
Frank L. Madarasz, Frank Szmulowicz and F. Kenneth Hopkins
Phys. Rev. B 52, 8964 (1995)
- Admittance spectroscopy studies of boron delta -doped Si quantum wells
Jian
Phys. Rev. B 52, 8959 (1995)
- Dynamics of exciton diffusion in SiGe quantum wells on a ssV-groove patterned Si substrate
N. Usami, H. Akiyama, Y. Shiraki and S. Fukatsu
Phys. Rev. B 52, 5132 (1995)
- Time-resolved photoluminescence of pseudomorphic SiGe quantum wells
A. Zrenner, B. Fröhlich, J. Brunner, and G. Abstreiter
Phys. Rev. B 52, 16608 (1995)
- Quantum confinement of holes in Si1-xGex/Si quantum wells studied by admittance spectroscopy
Fang Lu, Jiayu Jiang, Henghui Sun, Dawei Gong, Xiangjiu Zhang, and Xun Wang
Phys. Rev. B 51, 4213 (1995)
- Interfaces, confinement, and resonant Raman scattering in Ge/Si quantum wells
O. Brafman, M. A. Araújo Silva, F. Cerdeira, R. Manor and J. C. Bean
Phys. Rev. B 51, 17800 (1995)
- Free-carrier and intersubband infrared absorption in p-type Si1-xGex/Si multiple quantum wells
S. Zanier, J. M. Berroir, Y. Guldner, J. P. Vieren, I. Sagnes, F. Glowacki, Y. Campidelli, and P. A. Badoz
Phys. Rev. B 51, 14311 (1995)