1995 year
- Magnetic-Field-Induced Spin-Conserving and Spin-Flip Intersubband Transitions in InAs Quantum Wells
C. Gauer, A. Wixforth, J. P. Kotthaus, M. Kubisa, W. Zawadzki, B. Brar and H. Kroemer
Phys. Rev. Lett. 74, 2772 (1995)
- Optically detected far-infrared resonances in doped GaAs quantum wells
J. Kono, S. T. Lee, M. S. Salib, G. S. Herold, A. Petrou, and B. D. McCombe
Phys. Rev. B 52, R8654 (1995)
- Magneto-optical spectroscopy of positively charged excitons in GaAs quantum wells
A.J. Shields, J.L. Osborne, M.Y. Simmons, M. Pepper, and D.A. Ritchie
Phys. Rev. B 52, R5523 (1995)
- Variation of the wave-function localization on the monolayer scale in GaSb quantum wells probed by magnetoluminescence
P. V. Giugno, A. L. Convertino, R. Rinaldi, R. Cingolani, J. Massies and M. Leroux
Phys. Rev. B 52, R11591 (1995)
- Exciton/biexciton energies in rectangular GaAs/AlxGa1-xAs quantum-well wires including finite Al-graded band offsets with application to third-order optical susceptibilities
Frank L. Madarasz, Frank Szmulowicz and F. Kenneth Hopkins
Phys. Rev. B 52, 8964 (1995)
- Confinement effect in a quantum well dot induced by an InP stressor
J. Tulkki and A. Heinämäki
Phys. Rev. B 52, 8239 (1995)
- Spin-triplet negatively charged excitons in GaAs quantum wells
A. J. Shields, M. Pepper, M. Y. Simmons and D. A. Ritchie
Phys. Rev. B 52, 7841 (1995)
- Current characteristics of the double-barrier Al0.25Ga0.75As/Al0.45Ga0.55As/GaAs single-quantum-well structures
T. Osotchan, V. W. L. Chin, and T. L. Tansley
Phys. Rev. B 52, 5202 (1995)
- Linewidth analysis of the photoluminescence of InxGa1-xAs/GaAs quantum wells (x=0.09, 0.18, 1.0)
A. Patanè, A. Polimeni, M. Capizzi and F. Martelli
Phys. Rev. B 52, 2784 (1995)
- Influence of electron temperature and carrier concentration on electron
S.
Phys. Rev. B 52, 1874 (1995)
- Infrared absorption due to two-dimensional-electron-gas collective excitation in GaAs/AlxGa1-xAs multiple-quantum-well structures
Qin
Phys. Rev. B 52, 1848 (1995)
- Warm-electron power loss in GaAs/Ga1-xAlxAs multiple quantum wells: Well-width dependence
N. Balkan, H. Çelik, A. J. Vickers and M. Cankurtaran
Phys. Rev. B 52, 17210 (1995)
- Magnetophotoluminescence measurement of the formation time of an exciton in AlxGa1-xAs/GaAs quantum-well structures
J. B. Zhu, H. I. Jeon, E.
Phys. Rev. B 52, 16353 (1995)
- Exciton recombination dynamics in InxGa1-xAs/GaAs quantum wells
Haiping Yu, Christine Roberts, and Ray Murray
Phys. Rev. B 52, 1493 (1995)
- Optical-phonon emission in GaAs/AlAs multiple-quantum-well structures determined by hot-electron luminescence
V. F. Sapega, M. P. Chamberlain, T. Ruf, M. Cardona, D. N. Mirlin, K. Tötemeyer, A. Fischer, and K. Eberl
Phys. Rev. B 52, 14144 (1995)
- Radiative states in type-II GaSb/GaAs quantum wells
N. N. Ledentsov, J. Böhrer, M. Beer, F. Heinrichsdorff, M. Grundmann, D. Bimberg, S. V. Ivanov, B. Ya. Meltser, S. V. Shaposhnikov, I. N. Yassievich, N. N. Faleev, P. S. Kop
Phys. Rev. B 52, 14058 (1995)
- Direct and indirect magnetoexcitons in symmetric InxGa1-xAs/GaAs coupled quantum wells
L. V. Butov, A. Zrenner, G. Abstreiter, A. V. Petinova and K. Eberl
Phys. Rev. B 52, 12153 (1995)
- Optically detected cyclotron resonance on GaAs/AlxGa1-xAs quantum wells and quantum wires
D. M. Hofmann, M. Drechsler, C. Wetzel, B. K. Meyer,F. Hirler, R. Strenz, G. Abstreiter, G. Böhm, and G. Weimann
Phys. Rev. B 52, 11313 (1995)
- Carrier effective masses in symmetrically strained (GaIn)As/Ga(PAs) multiple-quantum-well structures
M. Volk, S. Lutgen, T. Marschner, W. Stolz, E. O. Göbel, P. C. M. Christianen and J. C. Maan
Phys. Rev. B 52, 11096 (1995)
- Binding energies and oscillator strengths of excitons in thin GaAs/Ga0.7Al0.3As quantum wells
V. Voliotis, R. Grousson, P. Lavallard and R. Planel
Phys. Rev. B 52, 10725 (1995)
- Normalized reflection spectra in GaAs/InxGa1-xAs single quantum wells: Structure characterizations and excitonic properties
A. D
Phys. Rev. B 52, 10713 (1995)
- Exciton states in two-dimensional systems of GaAs/AlAs multi-quantum-well structures under high magnetic fields
T. Yasui, Y. Segawa, Y. Aoyagi, Y. Iimura, G. E. W. Bauer, I. Mogi and G. Kido
Phys. Rev. B 51, 9813 (1995)
- Intersubband transitions in InAs/AlSb quantum wells studied by resonant Raman scattering
J. Wagner, J. Schmitz, F. Fuchs, J. D. Ralston, P. Koidl and D. Richards
Phys. Rev. B 51, 9786 (1995)
- Excitonic properties and resonance widths in biased (Ga,In)As-GaAs double quantum wells
Pierre Bigenwald and Bernard Gil
Phys. Rev. B 51, 9780 (1995)
- Nanoroughness localization of excitons in GaAs multiple quantum wells studied by transient four-wave mixing
D. Birkedal, V. G. Lyssenko, K.
Phys. Rev. B 51, 7977 (1995)
- Breakdown of the quantum Hall effect in InAs/AlSb quantum wells due to counterflowing edge channels
B.J. van Wees, G.I. Meijer, J.J. Kuipers, T.M. Klapwijk, W. van de Graaf and G. Borghs
Phys. Rev. B 51, 7973 (1995)
- Zeeman splitting and g factor of heavy-hole excitons in InxGa1-xAs/GaAs quantum wells
N. J. Traynor, R. T. Harley and R. J. Warburton
Phys. Rev. B 51, 7361 (1995)
- Electronic and acoustic-phonon inter-Landau-level Raman scattering in GaAs/AlxGa1-xAs multiple quantum wells
A. Fainstein, T. Ruf, M. Cardona, V. I. Belitsky and A. Cantarero
Phys. Rev. B 51, 7064 (1995)
- Microscopic calculation of the electron
Insook Lee, S. M. Goodnick, M. Gulia, aE. Molinari and P. Lugli
Phys. Rev. B 51, 7046 (1995)
- Theoretical and experimental investigations of the electronic structure for selectively delta -doped strained InxGa1-xAs/GaAs quantum wells
Mao
Phys. Rev. B 51, 5038 (1995)
- Simple trial function for shallow donor D0 states in GaAs-Ga1-xAlxAs quantum-well structures
F. J. Betancur and I. D. Mikhailov
Phys. Rev. B 51, 4982 (1995)
- Dynamics of carrier-capture processes in GaxIn1-xAs/GaAs near-surface quantum wells
J. Dreybrodt, F. Daiminger, J. P. Reithmaier, and A. Forchel
Phys. Rev. B 51, 4657 (1995)
- Magneto-optical absorption spectrum of a D- ion in a GaAs-Ga0.75Al0.25As quantum well
M. Fujito, A. Natori, and H. Yasunaga
Phys. Rev. B 51, 4637 (1995)
- Energy gaps in strained In1-xGaxAs/In1-yGayAszP1-z quantum wells grown on (001) InP
R. Weihofen, G. Weiser, Ch. Starck, and R. J. Simes
Phys. Rev. B 51, 4296 (1995)
- Spin relaxation in intrinsic GaAs quantum wells: Influence of excitonic localization
L. Muñoz, E. Pérez, L. Viña and K. Ploog
Phys. Rev. B 51, 4247 (1995)
- Band nonparabolicity and central-cell corrections for D- centers in GaAs quantum wells
E. R. Mueller, D. M. Larsen, W. D. Goodhue, and J. Waldman
Phys. Rev. B 51, 2326 (1995)
- Resonant electron capture in AlxGa1-xAs/AlAs/GaAs quantum wells
A. Fujiwara, Y. Takahashi, S. Fukatsu, Y. Shiraki and R. Ito
Phys. Rev. B 51, 2291 (1995)
- Donor 1s-2p
A. Latgé, N. Porras
Phys. Rev. B 51, 2259 (1995)
- Photoluminescence study of silicon donors in n-type modulation-doped GaAs/AlAs quantum wells
S. T. Lee, A. Petrou, M. Dutta, J. Pamulapati, P. G. Newman and L. P. Fu
Phys. Rev. B 51, 1942 (1995)
- Quenching of excitonic optical transitions by excess electrons in GaAs quantum wells
A.J. Shields, M. Pepper, D.A. Ritchie, M.Y. Simmons, and G.A.C. Jones
Phys. Rev. B 51, 18049 (1995)
- Raman scattering due to interface optical phonons in GaAs/AlAs multiple quantum wells
A. J. Shields, M. P. Chamberlain, M. Cardona, and K. Eberl
Phys. Rev. B 51, 17728 (1995)
- Optical measurements of electronic band structure in tensile strain (Ga,In)P-(Al,Ga,In)P quantum wells
Martin D. Dawson, Geoffrey Duggan and D. J. Arent
Phys. Rev. B 51, 17660 (1995)
- Phonon broadening of excitons in GaAs/AlxGa1-xAs quantum wells
D. Gammon, S. Rudin, T. L. Reinecke, D. S. Katzer, and C. S. Kyono
Phys. Rev. B 51, 16785 (1995)
- Enhancement of nonradiative recombination due to resonant electron capture in AlxGa1-xAs/GaAs quantum-well structures
A. Fujiwara, K. Muraki, S. Fukatsu, Y. Shiraki and R. Ito
Phys. Rev. B 51, 14324 (1995)
- LO-phonon emission in an AlxGa1-xAs-GaAs-AlyGa1-yAs single quantum well with two occupied electronic subbands
W. Xu
Phys. Rev. B 51, 13294 (1995)
- Influence of interface localization on the binding energy of acceptor bound excitons in narrow GaAs/AlxGa1-xAs quantum wells
C. I. Harris, B. Monemar, H. Kalt, P. O. Holtz, M. Sundaram, J. L. Merz, and A. C. Gossard
Phys. Rev. B 51, 13221 (1995)
- Calculation and photoresponse measurement of the bound-to-continuum infrared absorption in p-type GaAs/AlxGa1-xAs quantum wells
Frank Szmulowicz and Gail J. Brown
Phys. Rev. B 51, 13203 (1995)
- Hole relaxation in p-type InxGa1-xAs/AlyGa1-yAs quantum wells observed by ultrafast midinfrared spectroscopy
Z. Xu, P. M. Fauchet, C. W. Rella, B. A. Richman, H. A. Schwettman and G. W. Wicks
Phys. Rev. B 51, 10631 (1995)