Technolodgy
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Semiconductors, 2008, Volume 42, Number 7, 08050812
- Effect of quantum confinement on optical properties of Ge nanocrystals in GeO2 films
E. B. Gorokhov, V. A. Volodin, D. V. Marin, D. A. Orekhov, A. G. Cherkov, A. K. Gutakovskii, V. A. Shvets, A. G. Borisov and M. D. Efremov
Semiconductors, 2005, Volume 39, Number 10, 11681175
- Properties of self-organized SiGe nanostructures formed by ion implantation
Yu. N. Parkhomenko, A. I. Belogorokhov, N. N. Gerasimenko, A. V. Irzhak and M. G. Lisachenko
Semiconductors, 2004, Volume 38, Number 5, 05720575
- Room-temperature 1.5
A. A. Tonkikh, G. E. Tsyrlin, V. G. Talalaev, B. V. Novikov, V. A. Egorov, N. K. Polyakov, Yu. B. Samsonenko, V. M. Ustinov, N. D. Zakharov and P. Werner
Semiconductors, 2003, Volume 37, Number 12, 14061410
- Stark effect in vertically coupled quantum dots in InAs-GaAs heterostructures
M. M. Sobolev, V. M. Ustinov, A. E. Zhukov, Yu. G. Musikhin and N. N. Ledentsov
Semiconductors, 2002, Volume 36, Number 9, 10131019
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Semiconductors, 2002, Volume 36, Number 7, 08160820
- Anisotropy of the spatial distribution of In(Ga)As quantum dots in In(Ga)As-GaAs multilayer heterostructures studied by X-ray and synchrotron diffraction and transmission electron microscopy
N. N. Faleev, Yu. G. Musikhin, A. A. Suvorova, A. Yu. Egorov, A. E. Zhukov, A. R. Kovsh, V. M. Ustinov, M. Tabuchi and Y. Takeda
Semiconductors, 2001, Volume 35, Number 8, 09320940
- Stacked InAs/InGaAs quantum dot heterostructures for optical sources emitting in the 1.3
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Semiconductors, 2000, Volume 34, Number 5, 05940597
- Silicon-germanium nanostructures with quantum dots: Formation mechanisms and electrical properties
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Semiconductors, 2000, Volume 34, Number 11, 12291247
- InGaAs/InP heterostructures with strained quantum wells and quantum dots (λ=1.5
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Semiconductors, 1999, Volume 33, Number 9, 10071009
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