1997 year
- Type II Band Alignment in Si1-xGex/Si(001) Quantum Wells: The Ubiquitous Type I Luminescence Results from Band Bending
M. L. W. Thewalt, D. A. Harrison, C. F. Reinhart, J. A. Wolk, H. Lafontaine
Phys. Rev. Lett. 79, 269 (1997)
- Band Alignment in Si1-yCy/Si(001) and Si1-xGex/Si1-yCy/Si(001) Quantum Wells by Photoluminescence under Applied [100] and
D. C. Houghton, G. C. Aers, N. L. Rowell, K. Brunner, W. Winter, and K. Eberl
Phys. Rev. Lett. 78, 2441 (1997)
- Electron spin resonance on a two-dimensional electron gas
N. Nestle, G. Denninger, M. Vidal, C. Weinzierl, K. Brunner, K. Eberl, and K. von Klitzing
Phys. Rev. B 56, R4359 (1997)
- Photoluminescence from Si/SiO2 single quantum wells by selective excitation
Yoshihiko Kanemitsu and Shinji Okamoto
Phys. Rev. B 56, R15561 (1997)
- Symmetry in the insulator
M. Hilke, D. Shahar, S. H. Song, D. C. Tsui, Y. H. Xie and Don Monroe
Phys. Rev. B 56, R15545 (1997)
- Metal-insulator transition at B=0 in p-type SiGe
P. T. Coleridge, R. L. Williams, Y. Feng, and P. Zawadzki
Phys. Rev. B 56, R12764 (1997)
- Scaling and the metal-insulator transition in Si/SiGe quantum wells
J. Lam, M. D'Iorio, D. Brown, and H. Lafontaine
Phys. Rev. B 56, R12741 (1997)
- Enhancement of bulklike second-order nonlinear susceptibility in SiGe/Si step wells and biasing-field controlled (Si5Ge5)100
Xinhui Zhang, Zhenghao Chen, Linzhen Xuan, Shaohua Pan, and Guozhen Yang
Phys. Rev. B 56, 15842 (1997)
- Recombination processes in SiGe/Si quantum wells measured by photoinduced absorption spectroscopy
E. Dekel, E. Ehrenfreund, D. Gershoni, P. Boucaud, I. Sagnes and Y. Campidelli
Phys. Rev. B 56, 15734 (1997)
- Recombination processes in SiGe/Si quantum wells measured by photoinduced absorption spectroscopy
E. Dekel, E. Ehrenfreund, D. Gershoni, P. Boucaud, I. Sagnes and Y. Campidelli
Phys. Rev. B 56, 15734 (1997)
- Quantum confinement effect in silicon quantum-well layers
Jian-Bai Xia and K. W. Cheah
Phys. Rev. B 56, 14925 (1997)