Bibliografic database on Semiconductors, Heterostructures and Biophysics

Carrier Capture into the Quantum Wells

• Resonance transfer of charge carriers in Si/CaF2 periodic nanostructures via trap states in insulator
  Yu. A. Berashevich, A. L. Danilyuk and V. E. Borisenko
  Semiconductors, 2002, Volume 36, Number 6, 06790684
• Theory of carrier dynamics and time resolved reflectivity in InxMn1−xAs∕GaSb heterostructures
  G. D. Sanders, C. J. Stanton, J. Wang, J. Kono, A. Oiwa, H. Munekata
  Phys. Rev. B 72, 245302 (2005)
• Carrier dynamics in an InGaAs dots-in-a-well structure formed by atomic-layer epitaxy
  Y. M. Park, Y. J. Park, K. M. Kim, J. C. Shin, J. D. Song, J. I. Lee, and K.-H. Yoo
  Phys. Rev. B 70, 035322 (2004)
• Many-body theory of carrier capture and relaxation in semiconductor quantum-dot lasers
  T. R. Nielsen, P. Gartner, and F. Jahnke
  Phys. Rev. B 69, 235314 (2004)
• Resonant states induced by impurities in heterostructures
  A. Blom, M. A. Odnoblyudov, I. N. Yassievich and K. A. Chao
  Phys. Rev. B 65, 155302 (2002)
• Electron scattering and capture rates in quantum wells by emission of hybrid optical phonons
  V. N. Stavrou, C. R. Bennett, O. M. M. Al-Dossary, and M. Babiker
  Phys. Rev. B 63, 205304 (2001)
• Carrier capture in ultrathin InAs/GaAs quantum wells
  J. Brübach, A. Yu. Silov, J. E. M. Haverkort, W. van der Vleuten, and J. H. Wolter
  Phys. Rev. B, 16833 (2000)
• Calculation of capture of carriers by quantum wells
  S. A. Levetas and M. J. Godfrey
  Phys. Rev. B 59, 10202 (1999)
• Model for the effect of finite phase-coherence length on resonant transmission and capture by quantum wells
  G. A. Baraff
  Phys. Rev. B 58, 13799 (1998)
• Competition effects in the carrier capture into InxGa1-xAs/GaAs double-quantum-well structures
  P. Borri, M. Gurioli, M. Colocci, F. Martelli and M. Capizzi
  Phys. Rev. B 56, 9228 (1997)
• Carrier capture times in quantum-well, -wire, and -box distributed-feedback lasers characterized by dynamic lasing emission measurements
  Jian Wang Griesinger, U.A. Geiger, M. Scholz, F. Schweizer, H.C.
  IEEE J. Select. Topics Quantum Electron., 3, 223 (1997)
• Exciton capture by shallow quantum wells in separate confinement heterostructures
  O. Heller and G. Bastard
  Phys. Rev. B 54, 5629 (1996)
• Electron capture in quantum wells via scattering by electrons, holes, and optical phonons
  Karol Kálna and Martin Mosko
  Phys. Rev. B 54, 17730 (1996)
• Evidence for resonant electron capture and charge buildup in GaAs/AlxGa1-xAs quantum wells
  K. Muraki, A. Fujiwara, S. Fukatsu, Y. Shiraki and Y. Takahashi
  Phys. Rev. B 53, 15477 (1996)
• Emission dynamics of dot and wire DFB lasers
  Jian Wang Griesinger, U.A. Geiger, M. Ottenwaelder, D. Scholz, F. Schweizer, H.
  IEEE J. Phot. Technol. Lett., 8, 1585 (1996)
• Electron escape rate from coupled multiple quantum wells: Effects of coherence length and hopping
  T. Kagawa, J. Kuhl, W. W. Rühle, Y. Kawamura and H. Iwamura
  Phys. Rev. B 51, 7772 (1995)
• Dynamics of carrier-capture processes in GaxIn1-xAs/GaAs near-surface quantum wells
  J. Dreybrodt, F. Daiminger, J. P. Reithmaier, and A. Forchel
  Phys. Rev. B 51, 4657 (1995)
• Resonant electron capture in AlxGa1-xAs/AlAs/GaAs quantum wells
  A. Fujiwara, Y. Takahashi, S. Fukatsu, Y. Shiraki and R. Ito
  Phys. Rev. B 51, 2291 (1995)
• Enhancement of nonradiative recombination due to resonant electron capture in AlxGa1-xAs/GaAs quantum-well structures
  A. Fujiwara, K. Muraki, S. Fukatsu, Y. Shiraki and R. Ito
  Phys. Rev. B 51, 14324 (1995)
• Space-charge-mediated capture of electrons and holes in a quantum well
  B. K. Ridley
  Phys. Rev. B 50, 1717 (1994)
• Nonradiative recombination via strongly localized defects in quantum wells
  P. Michler, T. Forner, V. Hofsä&bgr;, F. Prins, K. Zieger, F. Scholz, and A. Hangleiter
  Phys. Rev. B 49, 16632 (1994)
• Above-barrier resonant transitions in AlxGa1-xAs/AlAs/GaAs heterostructures
  Marcello Colocci, Juan Martinez
  Phys. Rev. B 48, 8089 (1993)
• Excitation-intensity-dependent photoluminescence quenching due to electric-field screening by photocarriers captured in single-quantum-well structures
  S. Fafard, E. Fortin and J. L. Merz
  Phys. Rev. B 48, 11062 (1993)
• Exciton dynamics in InxGa1-xAs/GaAs quantum-well heterostructures: Competition between capture and thermal emission
  G. Bacher, C. Hartmann, H. Schweizer, T. Held, G. Mahler and H. Nickel
  Phys. Rev. B 47, 9545 (1993)
• Electron and hole capture in multiple-quantum-well structures
  D. Morris, B. Deveaud, A. Regreny, and P. Auvray
  Phys. Rev. B 47, 6819 (1993)
• Extended, monolayer flat islands and exciton dynamics in Ga0.47In0.53As/InP quantum-well structures
  X. Liu, S. Nilsson, L. Samuelson, W. Seifert and P. L. Souza
  Phys. Rev. B 47, 2203 (1993)
• Carrier capture into a semiconductor quantum well
  P. W. M. Blom, C. Smit, J. E. M. Haverkort, and J. H. Wolter
  Phys. Rev. B 47, 2072 (1993)
• Ultrafast optical evidence for resonant electron capture in quantum wells
  M. R. X. Barros, P. C. Becker, D. Morris, B. Deveaud, A. Regreny and F. Beisser
  Phys. Rev. B 47, 10951 (1993)
• Density dependence of the electron-hole plasma lifetime in semiconductor quantum wells
  G. Bongiovanni and J. L. Staehli
  Phys. Rev. B 46, 9861 (1992)
• Energy levels in quantum wells with capping barrier layer of finite size: Bound states and oscillatory behavior of the continuum states
  S. Fafard
  Phys. Rev. B 46, 4659 (1992)
• Dynamics of carrier transport and carrier capture in In1-xGaxAs/InP heterostructures
  R. Kersting, R. Schwedler, K. Wolter, K. Leo, and H. Kurz
  Phys. Rev. B 46, 1639 (1992)
• Decay measurements of free- and bound-exciton recombination in doped GaAs/AlxGa1-xAs quantum wells
  J. P. Bergman, P. O. Holtz, B. Monemar, M. Sundaram, J. L. Merz, and A. C. Gossard
  Phys. Rev. B 43, 4765 (1991)
• Optical studies of vertical ambipolar transport and interface recombination velocities in GaAs/Al0.5Ga0.5As double-quantum-well heterostructures
  H. Hillmer, A. Forchel, T. Kuhn, G. Mahler and H. P. Meier
  Phys. Rev. B 43, 13992 (1991)