1996 year
- Quantum Coherence of Continuum States in the Valence Band of GaAs Quantum Wells
T. Dekorsy, A. M. T. Kim, G. C. Cho, S. Hunsche, H. J. Bakker, H. Kurz, S. L. Chuang and K. Köhler
Phys. Rev. Lett. 77, 3045 (1996)
- Observation of Internal Transitions of Confined Excitons in GaAs/AlGaAs Quantum Wells
M. S. Salib, H. A. Nickel, G. S. Herold, A. Petrou, B. D. McCombe, R. Chen, K. K. Bajaj and W. Schaff
Phys. Rev. Lett. 77, 1135 (1996)
- Terahertz Dynamics of Excitons in GaAs/AlGaAs Quantum Wells
J. Cerne, J. Kono, M. S. Sherwin, M. Sundaram, A. C. Gossard, and G. E. W. Bauer
Phys. Rev. Lett. 77, 1131 (1996)
- Transient Linear Birefringence in GaAs Quantum Wells: Magnetic Field Dependence of Coherent Exciton Spin Dynamics
R. E. Worsley, N. J. Traynor, T. Grevatt, and R. T. Harley
Phys. Rev. Lett. 76, 3224 (1996)
- Flux-periodic resistance oscillations in arrays of superconducting weak links based on InAs-AlSb quantum wells with Nb electrodes
Mason Thomas, Hans-Richard Blank and K. C. Wong
Phys. Rev. B 54, R2311 (1996)
- Femtosecond luminescence measurements of the intersubband scattering rate in AlxGa1-xAs/GaAs quantum wells under selective excitation
M. Hartig, S. Haacke, B. Deveaud and L. Rota
Phys. Rev. B 54, R14269 (1996)
- Observation of a D- triplet transition in GaAs/AlxGa1-xAs multiple quantum wells
S. R. Ryu, Z. X. Jiang, W. J. Li, B. D. McCombe and W. Schaff
Phys. Rev. B 54, R11086 (1996)
- Direct and indirect excitons in coupled GaAs/Al0.30Ga0.70As double quantum wells separated by AlAs barriers
M. Bayer, V. B. Timofeev, F. Faller, T. Gutbrod, and A. Forchel
Phys. Rev. B 54, 8799 (1996)
- Electron-assisted exciton transfer and long-lived electrons and holes in GaAs/AlxGa1-xAs quantum wells
B. M. Ashkinadze, E. Tsidilkovski, E. Linder, E. Cohen, Arza Ron and L. N. Pfeiffer
Phys. Rev. B 54, 8728 (1996)
- Generalized eigenproblem method for surface and interface states: The complex bands of GaAs and AlAs
Timothy B. Boykin
Phys. Rev. B 54, 8107 (1996)
- Analytic solutions for the valence subband mixing at the zone center of a GaAs/AlxGa1-xAs quantum well under uniaxial stress perpendicular to the growth direction
G. Rau, P. C. Klipstein, V. Nikos Nicopoulos, and N. F. Johnson
Phys. Rev. B 54, 5700 (1996)
- Intersubband transitions in strained In0.07Ga0.93As/Al0.40Ga0.60As multiple quantum wells and their application to a two-colors photodetector
Danhong Huang and M. O. Manasreh
Phys. Rev. B 54, 5620 (1996)
- Picosecond time evolution of free electron-hole pairs into excitons in GaAs quantum wells
Rajesh Kumar, A. S. Vengurlekar, S. S. Prabhu, Jagdeep Shah and L. N. Pfeiffer
Phys. Rev. B 54, 4891 (1996)
- Photoinduced electron coupling in delta -doped GaAs/In0.18Ga0.82As quantum wells
Ikai Lo, M. J. Kao, W. C. Hsu, K. K. Kuo, Y. C. Chang, H. M. Weng, J. C. Chiang, and S. F. Tsay
Phys. Rev. B 54, 4774 (1996)
- Investigation of deep metastable traps in Si delta -doped GaAs/Al0.33Ga0.67As quantum-well samples using noise spectroscopy
D. D. Carey, S. T. Stoddart, and S. J. Bending, J. J. Harris and C. T. Foxon
Phys. Rev. B 54, 2813 (1996)
- Effect of exciton-carrier thermodynamics on the GaAs quantum well photoluminescence
H. W. Yoon, D. R. Wake, and J. P. Wolfe
Phys. Rev. B 54, 2763 (1996)
- Transport mechanism of Gamma - and X-band electrons in AlxGa1-xAs/AlAs/GaAs double-barrier quantum-well infrared photodetectors
T. Osotchan, V. W. L. Chin, and T. L. Tansley
Phys. Rev. B 54, 2059 (1996)
- Monte Carlo simulation of intersubband relaxation in wide, uniformly doped GaAs/AlxGa1-xAs quantum wells
Manfred Dür,Stephen M. Goodnick and Paolo Lugli
Phys. Rev. B 54, 17794 (1996)
- Strong interaction of Fermi-edge singularity and exciton related to N=2 subband in a modulation-doped AlxGa1-xAs/InyGa1-yAs/GaAs quantum well
S. J. Xu, S. J. Chua, X. H. Tang, and X. H. Zhang
Phys. Rev. B 54, 17701 (1996)
- Excitons bound at interacting acceptors in AlxGa1-xAs/GaAs quantum wells
A. C. Ferreira, P. O. Holtz, B. Monemar, M. Sundaram, K. Campman, J. L. Merz, and A. C. Gossard
Phys. Rev. B 54, 16994 (1996)
- Exciton properties in p-type GaAs/AlxGa1-xAs quantum wells in the high doping regime
A. C. Ferreira, P. O. Holtz, B. E. Sernelius, I. Buyanova, B. Monemar, O. Mauritz, U. Ekenberg, M. Sundaram, K. Campman, J. L. Merz, and A. C. Gossard
Phys. Rev. B 54, 16989 (1996)
- Two-dimensional excitonic emission in InAs submonolayers
Z. L. Yuan, Z. Y. Xu, B. Z. Zheng, J. Z. Xu, S. S. Li, Weikun Ge, Y. Wang, J. Wang, L. L. Chang, P. D. Wang, C. M. Sotomayor Torres and N. N. Ledentsov
Phys. Rev. B 54, 16919 (1996)
- Energy levels of D0 and D- in graded quantum-well structures of GaAs/Ga1-xAlxAs under magnetic fields
Jia
Phys. Rev. B 54, 16786 (1996)
- Direct observation of above-barrier quasibound states in InxGa1-xAs/AlAs/GaAs quantum wells
C. D. Lee, J. S. Son, J. Y. Leem, S. K. Noh, Kyu
Phys. Rev. B 54, 1541 (1996)
- Optimization of the confinement energy of quantum-wire states in T-shaped GaAs/AlxGa1-xAs structures
W. Langbein, H. Gislason, and J. M. Hvam
Phys. Rev. B 54, 14595 (1996)
- Percolation of carriers through low potential channels in thick AlxGa1-xAs (x<0.35) barriers
D. S. Kim, H. S. Ko, Y. M. Kim, S. J. Rhee, S. C. Hohng, Y. H. Yee, W. S. Kim, J. C. Woo, H. J. Choi, J. Ihm, D. H. Woo and K. N. Kang
Phys. Rev. B 54, 14580 (1996)
- Binding energy of the complex (D+-X) with Gamma -X mixing in GaAs/AlAs quantum wells
I. C. da Cunha Lima, A. Ghazali andP. D. Emmel
Phys. Rev. B 54, 13996 (1996)
- High-pressure study of optical transitions in strained In0.2Ga0.8As/GaAs multiple quantum wells
G. H. Li, A. R. Goñi, K. Syassen, H. Q. Hou, W. Feng, and J. M. Zhou
Phys. Rev. B 54, 13820 (1996)
- Influence of the kinetic energy of electrons on the formation of excitons in a shallow InxGa1-xAs/GaAs quantum well
J. Kovac, H. Schweizer, M. H. Pilkuhn and H. Nickel
Phys. Rev. B 54, 13440 (1996)
- Magneto-optical experiments on GaAs/InxGa1-xAs/AlyGa1-yAs modulation-doped single quantum wells
F. Iikawa, M. L. F. Abbade, and J. A. Brum, A. A. Bernussi, R. G. Pereira and G. Borghs
Phys. Rev. B 54, 11360 (1996)
- Effect of the spin split-off band on optical absorption in p-type Ga1-xInxAsyP1-y quantum-well infrared detectors
J. R. Hoff, M. Razeghi and Gail J. Brown
Phys. Rev. B 54, 10773 (1996)
- Probing optical-phonon propagation in GaAs/AlxGa1-xAs quantum-well samples via their nonequilibrium population
P. Y. Yu, Zhenpeng Su, D. S. Kim, J. S. Khim, Y. S. Lim, Y. H. Yee, Y. H. Cho, J. S. Lee, J. H. Lee, J. S. Chang, B. D. Choe, D. H. Woo, E. J. Shin, D. Kim, K. Arya and J. J. Song
Phys. Rev. B 54, 10742 (1996)
- Electrical properties of undoped GaxIn1-xP/GaAs quantum wells
Said Elhamri, M. Ahoujja, R. S. Newrock, D. B. Mast, S. T. Herbert, W. C. Mitchel and Manijeh Razeghi
Phys. Rev. B 54, 10688 (1996)
- Effect of strain on a second-order van Hove singularity in AlxGa1-xAs/InyGa1-yAs quantum wells
M. Kemerink, P. M. Koenraad, and J. H. Wolter
Phys. Rev. B 54, 10644 (1996)
- Exciton and trion spectral line shape in the presence of an electron gas in GaAs/AlAs quantum wells
A. Manassen, E. Cohen, Arza Ron, E. Linder and L. N. Pfeiffer
Phys. Rev. B 54, 10609 (1996)
- Binding energies and envelope functions of light-hole excitons in GaAs/InxGa1-xAs/GaAs strained quantum wells
Z. S. Piao, M. Nakayama, and H. Nishimura
Phys. Rev. B 54, 10312 (1996)
- Self-aggregation of quantum dots for very thin InAs layers grown on GaAs
A. Polimeni, A. Patanè, M. Capizzi, F. Martelli, L. Nasi and G. Salviati
Phys. Rev. B 53, R4213 (1996)
- Negatively and positively charged excitons in GaAs/AlxGa1-xAs quantum wells
Gleb Finkelstein, Hadas Shtrikman, and Israel Bar-Joseph
Phys. Rev. B 53, R1709 (1996)
- Magnetic-field dependence of exciton spin relaxation in GaAs/AlxGa1-xAs quantum wells
R. T. Harley and M. J. Snelling
Phys. Rev. B 53, 9561 (1996)
- Successes and failures of the k
D. M. Wood and Alex Zunger
Phys. Rev. B 53, 7949 (1996)
- Intersubband resonances in InAs/AlSb quantum wells: Selection rules, matrix elements, and the depolarization field
R. J. Warburton, C. Gauer, A. Wixforth, J. P. Kotthaus, B. Brar and H. Kroemer
Phys. Rev. B 53, 7903 (1996)
- Reconstruction-dependent electron-hole recombination on GaAs(001) surfaces studied by using near-surface quantum wells
Hiroshi Yamaguchi, Kiyoshi Kanisawa, and Yoshiji Horikoshi
Phys. Rev. B 53, 7880 (1996)
- Absolute transmission, reflection, and absorption studies in GaAs/AlAs quantum wells containing a photoexcited electron gas
R. Harel, E. Cohen, E. Linder, Arza Ron and L. N. Pfeiffer
Phys. Rev. B 53, 7868 (1996)
- Exciton localization by potential fluctuations at the interface of InGaAs/GaAs quantum wells
F. Martelli,A. Polimeni, A. Patanè, M. Capizzi, P. Borri, M. Gurioli, M. Colocci, A. Bosacchi and S. Franchi
Phys. Rev. B 53, 7421 (1996)
- E1 transition in (113)-oriented GaAs/AlAs multiple quantum wells: Confinement effects and optical anisotropy
J. A. Prieto and G. Armelles
Phys. Rev. B 53, 6912 (1996)
- Role of excitons in double Raman resonances in GaAs quantum wells
L. Viña, J. M. Calleja, A. Cros, A. Cantarero, T. Berendschot, J. A. A. J. Perenboom and K. Ploog
Phys. Rev. B 53, 3975 (1996)
- Self-consistent determination of the band offsets in InAsxP1-x/InP strained-layer quantum wells and the bowing parameter of bulk InAsxP1-x
M. Beaudoin, A. Bensaada, R. Leonelli, P. Desjardins, R. A. Masut, L. Isnard, A. Chennouf and G. L'Espérance
Phys. Rev. B 53, 1990 (1996)
- Intrawell and interwell magnetoexcitons in InxGa1-xAs/GaAs coupled double quantum wells
A. B. Dzyubenko and A. L. Yablonskii
Phys. Rev. B 53, 16355 (1996)
- Evidence for resonant electron capture and charge buildup in GaAs/AlxGa1-xAs quantum wells
K. Muraki, A. Fujiwara, S. Fukatsu, Y. Shiraki and Y. Takahashi
Phys. Rev. B 53, 15477 (1996)
- Thermally activated intersubband and hopping transport in center-doped p-type GaAs/AlxGa1-xAs quantum wells
A. V. Buyanov, A. C. Ferreira, E. Söderström, I. A. Buyanova, P. O. Holtz, B. Sernelius, B. Monemar, M. Sundaram, K. Campman, J. L. Merz, and A. C. Gossard
Phys. Rev. B 53, 1357 (1996)
- Length dependence of quantized conductance in ballistic constrictions fabricated on InAs/AlSb quantum wells
S. J. Koester, B. Brar, C. R. Bolognesi, E. J. Caine, A. Patlach, E. L. Hu, H. Kroemer and M. J. Rooks
Phys. Rev. B 53, 13063 (1996)
- Photoluminescence due to positively charged excitons in undoped GaAs/AlxGa1-xAs quantum wells
J. L. Osborne, A. J. Shields, M. Pepper, F. M. Bolton and D. A. Ritchie
Phys. Rev. B 53, 13002 (1996)
- Radiative recombination in cylindrical GaAs-(Ga,Al)As quantum-well wires under quasistationary excitation conditions
S. T. Pérez
Phys. Rev. B 53, 12985 (1996)
- Interband transitions in AlxGa1-xAs/AlAs quantum-well structures
S. T. Lee, J. Haetty, A. Petrou, Pawel Hawrylak, M. Dutta, J. Pamulapati, P. G. Newman, and M. Taysing
Phys. Rev. B 53, 12912 (1996)
- L-band recombination in InxGa1-xP/In0.5Al0.5P multiple quantum wells
D. Patel, K. Interholzinger, P. Thiagarajan, G. Y. Robinson, and C. S. Menoni
Phys. Rev. B 53, 12633 (1996)
- Microwave modulation of circularly polarized exciton photonluminescence in GaAs/AlAs multiple quantum wells
Z. Chen
Phys. Rev. B 53, 10921 (1996)
- Hydrostatic-pressure coefficient of the direct band-gap energy of AlxGa1-xAs for x=0-0.35
Hyeonsik M. Cheong, J. H. Burnett, W. Paul, P. F. Hopkins, K. Campman, and A. C. Gossard
Phys. Rev. B 53, 10916 (1996)
- Hydrostatic-pressure determination of tensile-strained GaxIn1-xP-(AlyGa1-y)0.52In0.48P quantum-well band offsets
O. P. Kowalski, J. W. Cockburn, D. J. Mowbray, M. S. Skolnick, M. D. Dawson, G. Duggan, and A. H. Kean
Phys. Rev. B 53, 10830 (1996)
- Electron effective mass and nonparabolicity in Ga0.47In0.53As/InP quantum wells
C. Wetzel, R. Winkler, M. Drechsler B. K. Meyer, U. Rössler, J. Scriba, J. P. Kotthaus, V. Härle and F. Scholz
Phys. Rev. B 53, 1038 (1996)
- Pressure dependence of the photoluminescence of strained (001) and (111) InxGa1-xAs quantum wells
J. L. Sly and D. J. Dunstan
Phys. Rev. B 53, 10116 (1996)