Quantum Wells in electric field
- Nature of damped current oscillations in the formation of a static acoustoelectric domain in a n -InGaAs/GaAs quantum-well heterostructure
P. A. Belevskiĭ, M. N. Vinoslavskiĭ, V. N. Poroshin and I. V. Stroganova
Semiconductors, 2008, Volume 42, Number 5, 05890592
- High-frequency properties of double-well nanostructures
V. F. Elesin and I. Yu. Kateev
Semiconductors, 2008, Volume 42, Number 5, 05710575
- An increase in the electron mobility in the two-barrier AlGaAs/GaAs/AlGaAs heterostructure as a result of introduction of thin InAs barriers for polar optical phonons into the GaAs quantum well
Yu. Požela, K. Požela, V. Jucienė, S. Balakauskas, V. P. Evtikhiev, A. S. Schkolnik, Yu. Storasta and A. Mekys
Semiconductors, 2007, Volume 41, Number 12, 14391444
- Electric-field-controlled effects of spatial recurrence and multiplication of electron waves in two-dimensional semiconductor nanostructures
V. A. Petrov and A. V. Nikitin
Semiconductors, 2006, Volume 40, Number 8, 09490958
- High-frequency nonlinear response of double-well nanostructures
V. F. Elesin and I. Yu. Kateev
Semiconductors, 2005, Volume 39, Number 9, 10711075
- Zero-phonon and dipole Γ-X electron transitions in GaAs/AlAs quantum-well heterostructures in a longitudinal electric field
V. Ya. Aleshkin and A. A. Andronov
Semiconductors, 2000, Volume 34, Number 5, 05750582
- Wurtzite structure effects on spin splitting in GaN∕AlN quantum wells
Ikai Lo, W. T. Wang, M. H. Gau, S. F. Tsay, and J. C. Chiang
Phys. Rev. B 72, 245329 (2005)
- Electric field dependence of spin coherence in (001) GaAs/AlxGa1
Wayne H. Lau, Michael E. Flatté
Phys. Rev. B 72, 161311(R) (2005)
- Parameter regime of a resonance quantum switch
N. T. Bagraev, A. B. Mikhailova, B. S. Pavlov, L. V. Prokhorov, and A. M. Yafyasov
Phys. Rev. B 71, 165308 (2005)