1998 year
- Optically Pumped Nuclear Magnetic Resonance Measurements of the Electron Spin Polarization in GaAs Quantum Wells near Landau Level Filling Factor nu = 1 / 3
P. Khandelwal, N. N. Kuzma, S. E. Barrett, L. N. Pfeiffer, and K. W. West
Phys. Rev. Lett. 81, 673 (1998)
- Femtosecond Four-Wave Mixing Experiments on GaAs Quantum Wells Using Two Independently Tunable Lasers
D. S. Kim, J. Y. Sohn, J. S. Yahng, Y. H. Ahn, K. J. Yee, D. S. Yee, Y. D. Jho, S. C. Hohng, D. H. Kim, W. S. Kim, J. C. Woo, T. Meier, S. W. Koch, D. H. Woo, E. K. Kim, S. H. Kim and C. S. Kim
Phys. Rev. Lett. 80, 4803 (1998)
- Quantum confined Stark effect due to built-in internal polarization fields in (Al,Ga)N/GaN quantum wells
M. Leroux, N. Grandjean, M. Laügt, J. Massies, B. Gil, P. Lefebvre and P. Bigenwald
Phys. Rev. B 58, R13371 (1998)
- Pressure dependence of optical transitions in In0.15Ga0.85N/GaN multiple quantum wells
W. Shan, J. W. Ager III, W. Walukiewicz, E. E. Haller, M. D. McCluskey, N. M. Johnson, and D. P. Bour
Phys. Rev. B 58, R10191 (1998)
- Effect of the hole subband mixing on the spin splitting of heavy-hole excitons in coupled In0.045Ga0.955As/GaAs double quantum wells
T. Wang, M. Bayer, and A. Forchel
Phys. Rev. B 58, R10183 (1998)
- Multiple resonances involving magnetoexcitons in a GaAs/Al0.30Ga0.70As quantum well
M. Bayer, T. L. Reinecke, S. N. Walck, V. B. Timofeev and A. Forchel
Phys. Rev. B 58, 9648 (1998)
- Binding energies of ground and excited donor states bound to X valleys in GaAs/AlAs type-II quantum wells
Gleise N. Carneiro and Gerald Weber
Phys. Rev. B 58, 7829 (1998)
- Interface effects on magnetopolarons in GaAs/AlxGa1-xAs quantum wells at high magnetic fields
G. Q. Hai, F. M. Peeters, N. Studart, Y. J. Wang and B. D. McCombe
Phys. Rev. B 58, 7822 (1998)
- Saturation spectroscopy and electronic-state lifetimes in a magnetic field in InAs/AlxGa1-xSb single quantum wells
S. K. Singh, B. D. McCombe, J. Kono, S. J. Allen, Jr., I. Lo,W. C. Mitchel and C. E. Stutz
Phys. Rev. B 58, 7286 (1998)
- Peculiarities of photoluminescence in pseudomorphic modulation-doped Al0.2Ga0.8As/In0.1Ga0.9As/GaAs quantum wells
H. Kissel, U. Müller, C. Walther, W. T. Masselink, Yu. I. Mazur, G. G. Tarasov, and Z. Ya. Zhuchenko
Phys. Rev. B 58, 4754 (1998)
- Many-body effects in highly acceptor-doped GaAs/AlxGa1-xAs quantum wells
P. O. Holtz, A. C. Ferreira, B. E. Sernelius, A. Buyanov, B. Monemar, O. Mauritz, U. Ekenberg, M. Sundaram, K. Campman, J. L. Merz, and A. C. Gossard
Phys. Rev. B 58, 4624 (1998)
- Fractional-dimensional approach for excitons in GaAs-Ga1-xAlxAs quantum wells
A. Matos-Abiague, L. E. Oliveira and M. de Dios-Leyva
Phys. Rev. B 58, 4072 (1998)
- Above-barrier states in InxGa1-xAs/GaAs multiple quantum wells with a thin cap layer
T. Worren, K. B. Ozanyan, O. Hunderi and
Phys. Rev. B 58, 3977 (1998)
- Transition from direct to indirect band structure induced by the AlSb layer inserted in the GaSb/AlSb quantum well
T. Wang, F. Kieseling, and A. Forchel
Phys. Rev. B 58, 3594 (1998)
- Anomalous transport and luminescence of indirect excitons in AlAs/GaAs coupled quantum wells as evidence for exciton condensation
L. V. Butov and A. I. Filin
Phys. Rev. B 58, 1980 (1998)
- Spin splitting in the electron subband of asymmetric GaAs/AlxGa1-xAs quantum wells: The multiband envelope function approach
L. Wissinger, U. Rössler, R. Winkler, B. Jusserand and D. Richards
Phys. Rev. B 58, 15375 (1998)
- Many-particle effects in Be- delta -doped GaAs/AlxGa1-xAs quantum wells
M. Kemerink, P. M. M. Thomassen, P. M. Koenraad, P. A. Bobbert, J. C. M. Henning, and J. H. Wolter
Phys. Rev. B 58, 1424 (1998)
- Charged exciton dynamics in GaAs quantum wells
G. Finkelstein, V. Umansky, I. Bar-Joseph, V. Ciulin, S. Haacke, J.-D. Ganière, and B. Deveaud
Phys. Rev. B 58, 12637 (1998)
- Electron mobility in a GaAs/AlAs quantum well with a thin AlAs middle barrier
X. F. Wang, I. C. da Cunha Lima and X. L. Lei
Phys. Rev. B 58, 12609 (1998)
- Thomas-Fermi approximation in a tight-binding calculation of delta -doped quantum wells in GaAs
S. Vlaev and L. M. Gaggero-Sager
Phys. Rev. B 58, 1142 (1998)
- Exciton binding energies in polar quantum wells with finite potential barriers
Ruisheng Zheng and Mitsuru Matsuura
Phys. Rev. B 58, 10769 (1998)
- Magnetic-field-induced delocalization in center-doped GaAs/AlxGa1-xAs multiple quantum wells
C. H. Lee, Y. H. Chang, Y. W. Suen and H. H. Lin
Phys. Rev. B 58, 10629 (1998)
- Recombination dynamics of free and localized excitons in GaN/Ga0.93Al0.07N quantum wells
P. Lefebvre, J. Allègre, B. Gil, A. Kavokine, H. Mathieu, W. Kim, A. Salvador, A. Botchkarev and Hadis Morkoç
Phys. Rev. B 57, R9447 (1998)
- Reduction of oscillator strength due to piezoelectric fields in GaN/AlxGa1-xN quantum wells
Jin Seo Im, H. Kollmer, J. Off, A. Sohmer, F. Scholz, and A. Hangleiter
Phys. Rev. B 57, R9435 (1998)
- Oscillations of intersubband electron relaxation in a GaAs/AlxGa1-xAs wide single quantum well near the single- to double-layer transition
L. V. Kulik, L. V. Butov, A. A. Shashkin, and V. T. Dolgopolov
Phys. Rev. B 57, R12677 (1998)
- Bose-Einstein statistics of an excitonic gas in two dimensions: Excitons and biexcitons in a GaAs quantum well
J. C. Kim and J. P. Wolfe
Phys. Rev. B 57, 9861 (1998)
- Localization of excitons in thermally annealed In0.14Ga0.86As/GaAs quantum wells studied by time-integrated four-wave mixing
W. Braun, L. V. Kulik, T. Baars, M. Bayer, and A. Forchel
Phys. Rev. B 57, 7196 (1998)
- Thomas-Fermi approximation in p-type delta -doped quantum wells of GaAs and Si
L. M. Gaggero-Sager, M. E. Mora-Ramos and D. A. Contreras-Solorio
Phys. Rev. B 57, 6286 (1998)
- Nonlinear photoluminescence in GaAs/AlxGa1-xAs quantum wells
T. Baars and M. Gal
Phys. Rev. B 57, 3974 (1998)
- Electron
Francisco A. P. Osório, Marcelo Z. Maialle and Oscar Hipólito
Phys. Rev. B 57, 1644 (1998)
- In-plane magnetoresistance studies of an extremely coupled double quantum well
M. A. Blount, J. A. Simmons, and S. K. Lyo
Phys. Rev. B 57, 14882 (1998)
- Observation of Landau levels and excitons at room temperature in In0.53Ga0.47As/InP quantum wells
O. Jaschinski, M. Vergöhl, J. Schoenes, A. Schlachetzki and P. Bönsch
Phys. Rev. B 57, 13086 (1998)
- Intrasubband and intersubband transitions in lightly and heavily doped GaAs/AlxGa1-xAs multiple quantum wells
Qin-Sheng Zhu, X. B. Wang, Z. T. Zhong, X. C. Zhou, Y. P. He, Z. P. Cao, G. Z. Zhang, J. Xiao, X. H. Sun, H. Z. Yang and Q. G. Du
Phys. Rev. B 57, 12388 (1998)
- Spin-orbit interaction in a two-dimensional electron gas in a InAs/AlSb quantum well with gate-controlled electron density
J. P. Heida, B. J. van Wees, J. J. Kuipers, T. M. Klapwijk and G. Borghs
Phys. Rev. B 57, 11911 (1998)