1999 year
- Imaging Spectroscopy of Two-Dimensional Excitons in a Narrow GaAs/AlGaAs Quantum Well
Qiang Wu, Robert D. Grober, D. Gammon and D. S. Katzer
Phys. Rev. Lett. 83, 2652 (1999)
- Reduction of Spin Polarization near Landau Filling Factor = 3 in GaAs/AlGaAs Quantum Wells
Yi-Qiao Song, Boyd M. Goodson, K. Maranowski and A. C. Gossard
Phys. Rev. Lett. 82, 2768 (1999)
- Zero-field spin splitting in InAs-AlSb quantum wells revisited
S. Brosig, K. Ensslin, R. J. Warburton, C. Nguyen, B. Brar, M. Thomas, and H. Kroemer
Phys. Rev. B 60, R13989 (1999)
- Magnetocapacitance and far-infrared photoconductivity in GaSb/InAs composite quantum wells
M. J. Yang, C. H. Yang, and B. R. Bennett
Phys. Rev. B 60, R13958 (1999)
- Charged excitonic complexes in GaAs/Al0.35Ga0.65As p-i-n double quantum wells
V. B. Timofeev, A. V. Larionov, M. Grassi Alessi, M. Capizzi, A. Frova and J. M. Hvam
Phys. Rev. B 60, 8897 (1999)
- Magneto-optics of the spatially separated electron and hole layers in GaAs/AlxGa1
L. V. Butov, A. A. Shashkin, V. T. Dolgopolov, K. L. Campman and A. C. Gossard
Phys. Rev. B 60, 8753 (1999)
- Birefringence in the transparency region of GaAs/AlAs multiple quantum wells
A. A. Sirenko, P. Etchegoin, A. Fainstein, K. Eberl and M. Cardona
Phys. Rev. B 60, 8253 (1999)
- Larmor beats and conduction electron g factors in InxGa1
A. Malinowski, D. J. Guerrier, N. J. Traynor, and R. T. Harley
Phys. Rev. B 60, 7728 (1999)
- Interface-related exciton-energy blueshift in GaN/AlxGa1
H. Wang, G. A. Farias, and V. N. Freire
Phys. Rev. B 60, 5705 (1999)
- Weak localization in Al0.5Ga0.5As/GaAs p-type quantum wells
S. Pedersen, C. B. Sørensen, A. Kristensen, P. E. Lindelof, L. E. Golub and N. S. Averkiev
Phys. Rev. B 60, 4880 (1999)
- Binding energy and dephasing of biexcitons in In0.18Ga0.82As/GaAs single quantum wells
P. Borri, W. Langbein, J. M. Hvam and F. Martelli
Phys. Rev. B 60, 4505 (1999)
- Optical control of the two-dimensional electron-gas density in single asymmetric quantum wells: Magnetic-field effect
A. J. C. Cardoso, Fanyao Qu, and P. C. Morais
Phys. Rev. B 60, 4501 (1999)
- Optical properties of GaAs/Al1
G. Rau, A. R. Glanfield, P. C. Klipstein, N. F. Johnson and G. W. Smith
Phys. Rev. B 60, 1900 (1999)
- Band structure of coupled InAs/GaSb quantum wells
S. de-Leon, L. D. Shvartsman, and B. Laikhtman
Phys. Rev. B 60, 1861 (1999)
- Segregation, interface morphology, and the optical properties of GaAs/AlAs quantum wells: A theoretical study
Belita Koiller, R. B. Capaz and H. Chacham
Phys. Rev. B 60, 1787 (1999)
- Exciton-electron dynamics studied by microwave photoconductivity and photoluminescence in undoped GaAs/Al0.3Ga0.7As quantum wells
M. Kozhevnikov, B. M. Ashkinadze, E. Cohen, Arza Ron and Hadas Shtrikman
Phys. Rev. B 60, 16894 (1999)
- Electron and hole microwave cyclotron resonance in photoexcited undoped GaAs/Al0.3Ga0.7As multiple quantum wells
M. Kozhevnikov, E. Cohen, Arza Ron and Hadas Shtrikman
Phys. Rev. B 60, 16885 (1999)
- Electric-field-induced anti-Stokes photoluminescence in an asymmetric GaAs/(Al,Ga)As double quantum well superlattice
L. Schrottke, R. Hey, and H. T. Grahn
Phys. Rev. B 60, 16635 (1999)
- Magneto-optical studies of the correlation between interface microroughness parameters and the photoluminescence line shape in GaAs/Ga0.7Al0.3As quantum wells
J. B. B. de Oliveira, E. A. Meneses and E. C. F. da Silva
Phys. Rev. B 60, 1519 (1999)
- Density dependence of carrier-carrier-induced intersubband scattering in GaAs/AlxGa1
M. Hartig, J. D. Ganière, P. E. Selbmann, B. Deveaud and L. Rota
Phys. Rev. B 60, 1500 (1999)
- Effect of the insertion of an ultrathin AlP layer on the optical properties of GaAsP/GaP quantum wells
K. Arimoto, T. Sugita, N. Usami, and Y. Shiraki
Phys. Rev. B 60, 13735 (1999)
- Ordered Hamiltonian and matching conditions for heterojunctions with wurtzite symmetry: GaN/AlxGa1
Francisco Mireles and Sergio E. Ulloa
Phys. Rev. B 60, 13659 (1999)
- Positive and negative persistent photoconductivity in a two-side-doped In0.53Ga0.47As/In0.52Al0.48As quantum well
D. R. Hang, Y. F. Chen, F. F. Fang and W. I. Wang
Phys. Rev. B 60, 13318 (1999)
- Transient enhanced intermixing of arsenic-rich nonstoichiometric AlAs/GaAs quantum wells
R. Geursen, I. Lahiri, M. Dinu, M. R. Melloch and D. D. Nolte
Phys. Rev. B 60, 10926 (1999)
- Indium segregation effects in (111)B-grown (In,Ga)As/GaAs piezoelectric quantum wells
Philippe Ballet, Pierre Disseix, Joël Leymarie, Aimé Vasson, Anne-Marie Vasson and Robert Grey
Phys. Rev. B 59, R5308 (1999)
- Comparative study of the negatively and positively charged excitons in GaAs quantum wells
Shmuel Glasberg, Gleb Finkelstein, Hadas Shtrikman, and Israel Bar-Joseph
Phys. Rev. B 59, R10425 (1999)
- Observation of long-lived oblique excitons in GaN-AlGaN multiple quantum wells
B. Gil, P. Lefebvre, J. Allègre, H. Mathieu, N. Grandjean, M. Leroux, J. Massies, P. Bigenwald and P. Christol
Phys. Rev. B 59, R10246 (1999)
- Photoluminescence studies of 100 and 111 InxGa1
T. Sauncy, M. Holtz, O. Brafman, D. Fekete, and Y. Finkelstein
Phys. Rev. B 59, 5056 (1999)
- Excitation intensity dependence of photoluminescence from narrow 100- and 111A-grown InxGa1
T. Sauncy, M. Holtz, O. Brafman, D. Fekete, and Y. Finkelstein
Phys. Rev. B 59, 5049 (1999)
- Photomodulated reflectance of InxGa1
P. J. Klar, G. Rowland, P. J. S. Thomas, A. Onischenko, T. E. Sale, T. J. C. Hosea and R. Grey
Phys. Rev. B 59, 2902 (1999)
- Well-width dependence of exciton-phonon scattering in InxGa1
P. Borri, W. Langbein, J. M. Hvam and F. Martelli
Phys. Rev. B 59, 2215 (1999)
- Persistent photoconductivity in semimetallic AlxGa1
L. C. Tsai, J. C. Fan, Y. F. Chen and Ikai Lo
Phys. Rev. B 59, 2174 (1999)
- Photoluminescence kinetics of indirect excitons in GaAs/AlxGa1
L. V. Butov, A. Imamoglu, A. V. Mintsev, K. L. Campman and A. C. Gossard
Phys. Rev. B 59, 1625 (1999)
- Optical study of Al0.4Ga0.6Sb/GaSb single quantum wells
R. Ferrini, M. Geddo, G. Guizzetti, M. Patrini, S. Franchi, C. Bocchi, E. Kh. Mukhamedzhanov, A. Baraldi and R. Magnanini
Phys. Rev. B 59, 15395 (1999)
- Time-resolved photoluminescence as a probe of internal electric fields in GaN-(GaAl)N quantum wells
Pierre Lefebvre, Jacques Allègre, Bernard Gil, Henry Mathieu, Nicolas Grandjean, Mathieu Leroux, Jean Massies and Pierre Bigenwald
Phys. Rev. B 59, 15363 (1999)
- Comparison of cooling rates for hot carriers in GaAs/AlAs quantum wells based on macroscopic and microscopic phonon modelsc
Jian-zhong Zhang, Bang-fen Zhu and Kun Huang
Phys. Rev. B 59, 13184 (1999)
- Dimensionality of excitons in laser-diode structures composed of InxGa1
Yukio Narukawa, Yoichi Kawakami, Shigeo Fujita and Shuji Nakamura
Phys. Rev. B 59, 10283 (1999)
- Exciton dynamics in GaAs/AlxGa1
K. Litvinenko, D. Birkedal, V. G. Lyssenko and J. M. Hvam
Phys. Rev. B 59, 10255 (1999)