2000 year
- Coherent Acoustic Phonon Oscillations in Semiconductor Multiple Quantum Wells with
Chi-Kuang Sun, Jian-Chin Liang, and Xiang-Yang Yu
Phys. Rev. Lett. 84, 179 (2000)
- Carrier capture in ultrathin InAs/GaAs quantum wells
J. Brübach, A. Yu. Silov, J. E. M. Haverkort, W. van der Vleuten, and J. H. Wolter
Phys. Rev. B, 16833 (2000)
- Occupation of the double subbands by the two-dimensional electron gas in the triangular quantum well at AlxGa1
Z. W. Zheng, B. Shen, R. Zhang, Y. S. Gui, C. P. Jiang, Z. X. Ma, G. Z. Zheng, S. L. Guo, Y. Shi, P. Han, Y. D. Zheng, T. Someya, and Y. Arakawa
Phys. Rev. B 62, R7739 (2000)
- Photoluminescence and radiative lifetime of trions in GaAs quantum wells
Axel Esser, Erich Runge, Roland Zimmermann and Wolfgang Langbein
Phys. Rev. B 62, 8232 (2000)
- Photoluminescence and radiative lifetime of trions in GaAs quantum wells
Axel Esser, Erich Runge, Roland Zimmermann and Wolfgang Langbein
Phys. Rev. B 62, 8232 (2000)
- Magneto-optical study of excitonic states in In0.045Ga0.955As/GaAs multiple coupled quantum wells
T. Wang, M. Bayer, A. Forchel, N. A. Gippius, and V. Kulakovskii
Phys. Rev. B 62, 7433 (2000)
- Fine structure of excitons in a quantum well in the presence of a nonhomogeneous magnetic
J. A. K. Freire, F. M. Peeters, A. Matulis, V. N. Freire and G. A. Farias
Phys. Rev. B 62, 7316 (2000)
- Internal transitions of confined neutral magnetoexcitons in GaAs/AlxGa1
H. A. Nickel,1 G. Kioseoglou,1 T. Yeo,1 H. D. Cheong, A. Petrou, B. D. McCombe, D. Broido, K. K. Bajaj, and R. A. Lewis
Phys. Rev. B 62, 2773 (2000)
- Optical properties of GaSb/Al0.4Ga0.6Sb multiple quantum wells
C. Bottazzi, A. Parisini, L. Tarricone, R. Magnanini, and A. Baraldi
Phys. Rev. B 62, 2731 (2000)
- Strain and crystallographic orientation effects on the valence subbands of wurtzite quantum wells
Francisco Mireles and Sergio E. Ulloa
Phys. Rev. B 62, 2562 (2000)
- Anisotropy of the electron g factor in lattice-matched and strained-layer III-V quantum wells
A. Malinowski and R. T. Harley
Phys. Rev. B 62, 2051 (2000)
- Polarization charge screening and indium surface segregation in (In,Ga)N/GaN single and
O. Mayrock, H.-J. Wünsche, and F. Henneberger
Phys. Rev. B 62, 16870 (2000).
- Magneto-optical studies of highly p-type modulation-doped GaAs/AlxGa1
S. Wongmanerod, P. P. Paskov, P. O. Holtz, B. Monemar, O. Mauritz, K. Reginski and M. Bugajski
Phys. Rev. B 62, 15952 (2000)
- Excitonic photoluminescence quenching by impact ionization of excitons and donors in GaAs/Al0.35Ga0.65As quantum wells with an in-plane electric field
J. Kundrotas, G. Valuis, A. sna, A. Kundrotait, A. Dargys, A. Suiedlis, J. Gradauskas, S. Amontas and K. Köhler
Phys. Rev. B 62, 15871 (2000)
- Peak position of the intersubband absorption spectrum of quantum wells with controlled electron concentrations
S. Tsujino, M. Rüfenacht, H. Nakajima, T. Noda, C. Metzner, and H. Sakaki
Phys. Rev. B 62, 1560 (2000)
- Coherent control and enhancement of refractive index in an asymmetric double quantum well
S. M. Sadeghi, H. M. van Driel, and J. M. Fraser
Phys. Rev. B 62, 15386 (2000)
- Bound exciton effect and carrier escape mechanisms in temperature-dependent surface
Shouvik Datta, B. M. Arora, and Shailendra Kumar
Phys. Rev. B 62, 13604 (2000).
- Modulation of the luminescence spectra of InAs self-assembled quantum dots by resonant tunneling through a quantum well
A. Patanè, A. Polimeni, L. Eaves, P. C. Main, M. Henini, A. E. Belyaev, Yu. V. Dubrovskii, P. N. Brounkov, E. E. Vdovin, Yu. N. Khanin and G. Hill
Phys. Rev. B 62, 13595 (2000)
- Spin relaxation in GaAs/AlxGa1
A. Malinowski, R. S. Britton, T. Grevatt, R. T. Harley, D. A. Ritchie and M. Y. Simmons
Phys. Rev. B 62, 13034 (2000)
- Excitons, biexcitons, and electron-hole plasma in a narrow 2.8-nm GaAs/AlxGa1
Qiang Wu, Robert D. Grober, D. Gammon and D. S. Katzer
Phys. Rev. B 62, 13022 (2000)
- Mechanism for photoluminescence in an InyAs1
J. C. Fan, W. K. Hung, Y. F. Chen, J. S. Wang and H. H. Lin
Phys. Rev. B 62, 10990 (2000)
- Magnetoresistance and electronic structure of asymmetric GaAs/Al0.3Ga0.7As double quantum
O. N. Makarovskii, L. Smrka, P. Vaek, T. Jungwirth, M. Cukr, and L. Jansen
Phys. Rev. B 62, 10908 (2000)
- Internal transitions of confined magnetoexcitons in GaAs-(Ga,Al)As quantum wells
C. A. Duque, C. L. Beltrán, A. Montes, N. Porras-Montenegro and L. E. Oliveira
Phys. Rev. B 61, 9936 (2000)
- Phase diagram of a two-dimensional liquid in GaAs/AlxGa1
V. B. Timofeev, A. V. Larionov, M. Grassi-Alessi, M. Capizzi and J. M. Hvam
Phys. Rev. B 61, 8420 (2000)
- Theoretical comparative study of negatively and positively charged excitons in GaAs/Ga1
B. Stébé, A. Moradi, and F. Dujardin
Phys. Rev. B 61, 7231 (2000)
- Spontaneous polarization effects in GaN/AlxGa1
J. Simon, R. Langer, A. Barski, and N. T. Pelekanos
Phys. Rev. B 61, 7211 (2000)
- Reflectance-based optically detected resonance studies of neutral and negatively charged donors in GaAs/AlxGa1
G. Kioseoglou, H. D. Cheong, T. Yeo, H. A. Nickel, A. Petrou, B. D. McCombe, A. Yu. Sivachenko, A. B. Dzyubenko and W. Schaff
Phys. Rev. B 61, 5556 (2000)
- Crossing behavior of the singlet and triplet state of the negatively charged magnetoexciton in a GaAs/Al0.55Ga0.45As quantum well
F. M. Munteanu, Yongmin Kim, C. H. Perry, D. G. Rickel, J. A. Simmons and J. L. Reno
Phys. Rev. B 61, 4731 (2000)
- Charged excitons in a low magnetic field in GaAs/Ga1
B. Stébé and A. Moradi
Phys. Rev. B 61, 2888 (2000)
- Many-body effects in highly p-type modulation-doped GaAs/AlxGa1
S. Wongmanerod, B. E. Sernelius, P. O. Holtz, B. Monemar, O. Mauritz, K. Reginski and M. Bugajski
Phys. Rev. B 61, 2794 (2000)
- Impurity cyclotron resonance lines of barrier donor electrons in quantum wells
David M. Larsen and Herbert L. Fox
Phys. Rev. B 61, 16720 (2000)
- Optical properties of heavily doped GaN/(Al,Ga)N multiple quantum wells grown on 6H-SiC(0001) by reactive molecular-beam epitaxy
A. Thamm, O. Brandt, J. Ringling, A. Trampert, K. H. Ploog, O. Mayrock, H.-J. Wünsche, and F. Henneberger
Phys. Rev. B 61, 16025 (2000)
- Free-electron density effects on the exciton dynamics in coupled quantum wells
A. Hernández-Cabrera and P. Aceituno
Phys. Rev. B 61, 15873 (2000)
- Electron-hole plasma effect on excitons in GaN/AlxGa1
Pierre Bigenwald, Alexey Kavokin, Bernard Gil and Pierre Lefebvre
Phys. Rev. B 61, 15621 (2000)
- Carrier-carrier scattering in GaAs/AlxGa1
K. W. Sun, T. S. Song, C.-K. Sun, J. C. Wang, M. G. Kane, S. Y. Wang and C. P. Lee
Phys. Rev. B 61, 15592 (2000)
- Temperature dependence of photoresponse in p-type GaAs/AlxGa1
F. Szmulowicz, A. Shen, H. C. Liu, G. J. Brown, Z. R. Wasilewski and M. Buchanan
Phys. Rev. B 61, 13798 (2000)
- InAs-AlSb quantum wells in tilted magnetic fields
S. Brosig, K. Ensslin, A. G. Jansen, C. Nguyen, B. Brar, M. Thomas, and H. Kroemer
Phys. Rev. B 61, 13045 (2000)
- Tight-binding description of the band-edge states in GaAs/AlAs quantum wells and superlattices
J. G. Menchero, T. G. Dargam, and Belita Koiller
Phys. Rev. B 61, 13021 (2000)
- Competition between radiative decay and energy relaxation of carriers in disordered InxGa1
M. Grassi Alessi, F. Fragano, A. Patanè, M. Capizzi, E. Runge and R. Zimmermann
Phys. Rev. B 61, 10985 (2000)
- Center-of-mass properties of the exciton in quantum wells
A. Siarkos, E. Runge, and R. Zimmermann
Phys. Rev. B 61, 10854 (2000)