2001 year
- Mechanisms for the Generation of Coherent Longitudinal-Optical Phonons in GaAs/AlGaAs Multiple Quantum Wells
K. J. Yee, Y. S. Lim, T. Dekorsy, and D. S. Kim
Phys. Rev. Lett. 86, 1630 (2001)
- Time-resolved photoluminescence of InxGa1
C. K. Choi, Y. H. Kwon, B. D. Little, G. H. Gainer, J. J. Song, Y. C. Chang, S. Keller, U. K. Mishra, and S. P. DenBaars
Phys. Rev. B 64, 245339 (2001)
- Interface modulation and quantum well to quantum wire crossover in semiconductor heterostructures
T. G. Dargam, R. B. Capaz and Belita Koiller
Phys. Rev. B 64, 245327 (2001)
- Electrostatic fields and compositional fluctuations in (In,Ga)N/GaN multiple quantum wells grown by plasma-assisted molecular-beam epitaxy
Patrick Waltereit, Oliver Brandt, Jens Ringling, and Klaus H. Ploog
Phys. Rev. B 64, 245305 (2001)
- Significant strain dependence of piezoelectric constants in InxGa1
G. Vaschenko, D. Patel, C. S. Menoni, N. F. Gardner, J. Sun, W. Götz, C. N. Tomé and B. Clausen
Phys. Rev. B 64, 241308 (2001)
- Scanning tunneling spectroscopy of quantum well and surface states of thin Ag films grown on GaAs(110)
C.-S. Jiang, H.-B. Yu, X.-D. Wang, C.-K. Shih, and Ph. Ebert
Phys. Rev. B 64, 235410 (2001)
- Hybridization of electron, light-hole, and heavy-hole states in InAs/GaSb quantum wells
A. Zakharova, S. T. Yen and K. A. Chao
Phys. Rev. B 64, 235332 (2001)
- Theory of coherent acoustic phonons in InxGa1
G. D. Sanders, C. J. Stanton and Chang Sub Kim
Phys. Rev. B 64, 235316 (2001)
- Quantum-confined Stark effects of an exciton bound to an ionized donor in a GaAs/Ga1
I. Essaoudi, B. Stébé, and A. Ainane
Phys. Rev. B 64, 235311 (2001)
- Crossover from coherent to incoherent excitation of two-dimensional plasmons in GaAs/AlxGa1
N. Sekine , K. Hirakawa, M. Voßebürger, P. Haring Bolivar, and H. Kurz
Phys. Rev. B 64, 201323 (2001)
- Optical studies of strain effects in quantum wells grown on (311) and (100) GaAs substrates
S. L. S. Freire, J. E. T. Reis, L. A. Cury, F. M. Matinaga, J. F. Sampaio and F. E. G. Guimarães
Phys. Rev. B 64, 195325 (2001)
- Origin of enhanced dynamic nuclear polarization and all-optical nuclear magnetic resonance in GaAs quantum wells
G. Salis, D. D. Awschalom, Y. Ohno and H. Ohno
Phys. Rev. B 64, 195304 (2001)
- Strain-dependent optical emission in In1
H. A. P. Tudury, M. K. K. Nakaema, F. Iikawa, J. A. Brum, E. Ribeiro, W. Carvalho, Jr., A. A. Bernussi, and A. L. Gobbi
Phys. Rev. B 64, 153301 (2001)
- Plasmons in coupled electron-hole double quantum wells
G. R. Aizin, B. Laikhtman and Godfrey Gumbs
Phys. Rev. B 64, 125317 (2001)
- Effect of band anticrossing on the optical transitions in GaAs1
J. Wu, W. Shan, W. Walukiewicz, K. M. Yu, J. W. Ager III, E. E. Haller, H. P. Xin, and C. W. Tu
Phys. Rev. B 64, 085320 (2001)
- Influence of a magnetic field on an exciton bound to an ionized donor impurity in GaAs/Ga1
B. Stébé, I. Essaoudi, A. Ainane and M. Saber
Phys. Rev. B 64, 085304 (2001)
- Specific features of the indirect exciton luminescence line in GaAs/AlxGa1
V. V. Krivolapchuk, E. S. Moskalenko, and A. L. Zhmodikov
Phys. Rev. B 64, 045313 (2001)
- Indirect barrier electron-hole gas transitions in mixed type-I
R. Guliamov, E. Lifshitz, E. Cohen, Arza Ron and L. N. Pfeiffer
Phys. Rev. B 64, 035314 (2001)
- Polarization dynamics and optical selection rules for excitonic transitions in strained quantum wells
Scot A. Hawkins, Martin J. Stevens, and Arthur L. Smirl
Phys. Rev. B 64, 035302 (2001)
- Magnetophotoluminescence of GaN/AlxGa1
P. A. Shields, R. J. Nicholas, N. Grandjean and J. Massies
Phys. Rev. B 63, 245319 (2001)
- Microscopic characterization of InAs/In0.28GaSb0.72/InAs/AlSb laser structure interfaces
W. Barvosa-Carter, M. E. Twigg, M. J. Yang, and L. J. Whitman
Phys. Rev. B 63, 245311 (2001)
- Temperature dependence and origin of InP(100) reflectance anisotropy down to 20 K
S. Visbeck, T. Hannappel, M. Zorn, J.-T. Zettler and F. Willig
Phys. Rev. B 63, 245303(2001)
- Mesoscopic-capacitor effect in GaN/AlxGa1
A. Di Carlo, A. Reale, P. Lugli, G. Traetta, M. Lomascolo, A. Passaseo, R. Cingolani, A. Bonfiglio, M. Berti, E. Napolitani, M. Natali, S. K. Sinha, A. V. Drigo, A. Vinattieri and M. Colocci
Phys. Rev. B 63, 235305 (2001)
- Photoluminescence of (111) InxGa1
N. W. A. van Uden, J. R. Downes, and D. J. Dunstan
Phys. Rev. B 63, 233304 (2001)
- Exact symmetries of electron Bloch states and optical selection rules in [001] GaAs/AlAs quantum wells and superlattices
P. Tronc and Yu. E. Kitaev
Phys. Rev. B 63, 205326 (2001)
- Spectroscopy of strain-induced quantum dots in GaAs/AlxGa1
W. V. Schoenfeld, C. Metzner, E. Letts, and P. M. Petroff
Phys. Rev. B 63, 205319 (2001)
- Photoluminescence of a low-density two-dimensional hole gas in a GaAs quantum well: Observation of valence-band Landau levels
S. Glasberg, H. Shtrikman, and I. Bar-Joseph
Phys. Rev. B 63, 201308 (2001)
- Origin of beat patterns in the quantum magnetoresistance of gated InAs/GaSb and InAs/AlSb quantum wells
A. C. H. Rowe, J. Nehls, R. A. Stradling and R. S. Ferguson
Phys. Rev. B 63, 201307 (2001)
- Origin of beat patterns in the quantum magnetoresistance of gated InAs/GaSb and InAs/AlSb quantum wells
A. C. H. Rowe, J. Nehls, R. A. Stradling and R. S. Ferguson
Phys. Rev. B 63, 201307 (2001)
- Effect of hydrogen on the electronic properties of InxGa1
A. Polimeni, G. Baldassarri H. v., H. M. Bissiri, M. Capizzi, M. Fischer, M. Reinhardt, and A. Forchel
Phys. Rev. B 63, 201304 (2001)
- Effect of nitrogen on the temperature dependence of the energy gap in InxGa1
A. Polimeni, M. Capizzi, M. Geddo, M. Fischer, M. Reinhardt, and A. Forchel
Phys. Rev. B 63, 195320 (2001)
- Electronic structure of beryllium acceptors confined in GaAs/AlxGa1
Q. X. Zhao, S. Wongmanerod, M. Willander, P. O. Holtz, S. M. Wang, and M. Sadeghi
Phys. Rev. B 63, 195317 (2001)
- Picosecond far-infrared studies of intra-acceptor dynamics in bulk GaAs and -doped AlAs/GaAs quantum wells
M. P. Halsall, P. Harrison, J.-P. R. Wells, I. V. Bradley, and H. Pellemans
Phys. Rev. B 63, 155314 (2001)
- Picosecond far-infrared studies of intra-acceptor dynamics in bulk GaAs and -doped AlAs/GaAs quantum wells
M. P. Halsall, P. Harrison, J.-P. R. Wells, I. V. Bradley, and H. Pellemans
Phys. Rev. B 63, 155314 (2001)
- Electron-hole plasma emission from In0.3Ga0.7N/GaN multiple quantum wells
M. Hao, S. J. Chua, X. H. Zhang, W. Wang, E. K. Sia, L. S. Wang, A. Raman, P. Li and W. Liu
Phys. Rev. B 63, 121308 (2001)
- Temperature dependence of exciton linewidths in InSb quantum wells
N. Dai, F. Brown, R. E. Doezema, S. J. Chung, and M. B. Santos
Phys. Rev. B 63, 115321 (2001)
- Optical generation of spatially separated electron and hole gases in intrinsic GaAs/AlxGa1
S. Glasberg, H. Shtrikman, and I. Bar-Joseph
Phys. Rev. B 63, 113302 (2001)
- Large terrace formation and modulated electronic states in (110) GaAs quantum wells
Masahiro Yoshita, Naoki Kondo, Hiroyuki Sakaki, Motoyoshi Baba and Hidefumi Akiyama
Phys. Rev. B 63, 075305 (2001)
- Exclusion principle and screening of excitons in GaN/AlxGa1
Pierre Bigenwald, Alexey Kavokin, Bernard Gil, and Pierre Lefebvre
Phys. Rev. B 63, 035315 (2001)
- Collective excitations in symmetric p-type GaAs/AlxGa1
Shun-Jen Cheng and Rolf R. Gerhardts
Phys. Rev. B 63, 035314 (2001)
- Type I band alignment in the GaNxAs1
I. A. Buyanova, G. Pozina, P. N. Hai, W. M. Chen, H. P. Xin and C. W. Tu
Phys. Rev. B 63, 033303 (2001)