1998 year
- Continuous stimulated emission at T = 293 K from separate-confinement heterostructure diode lasers with one layer of InAs quantum dots grown on vicinal GaAs(001) surfaces misoriented in the [010] direction in the active region
V. P. Evtikhiev, I. V. Kudryashov, E. Yu. Kotel'nikov, V. E. Tokranov, A. N. Titkov, I. S. Tarasov, and Zh. I. Alferov
Semicond., 32, 1323 (1998)
- Stable and Metastable InGaAs/GaAs Island Shapes and Surfactantlike Suppression of the Wetting Transformation
R. Leon, C. Lobo, J. Zou, T. Romeo, and D. J. H. Cockayne
Phys. Rev. Lett. 81, 2486 (1998)
- Quantum Wires Formed from Coupled InAs/GaAs Strained Quantum Dots
Craig Pryor
Phys. Rev. Lett. 80, 3579 (1998)
- Island Size Scaling in InAs/GaAs Self-Assembled Quantum Dots
Y. Ebiko, S. Muto, D. Suzuki, S. Itoh, K. Shiramine, T. Haga, Y. Nakata and N. Yokoyama
Phys. Rev. Lett. 80, 2650 (1998)
- Zeeman splitting of excitons and biexcitons in single In0.60Ga0.40As/GaAs self-assembled quantum dots
A. Kuther, M. Bayer, A. Forchel, A. Gorbunov, V. B. Timofeev, F. Schäfer and J. P. Reithmaier
Phys. Rev. B 58, R7508 (1998)
- Tunable intersublevel transitions in self-forming semiconductor quantum dots
R. Leon, S. Fafard, P. G. Piva, S. Ruvimov and Z. Liliental-Weber
Phys. Rev. B 58, R4262 (1998)
- Energy levels in self-assembled InAs/GaAs quantum dots above the pressure-induced Gamma -X crossover
I. E. Itskevich, S. G. Lyapin, I. A. Troyan, P. C. Klipstein, L. Eaves, P. C. Main, and M. Henini
Phys. Rev. B 58, R4250 (1998)
- Transmission-electron microscopy study of the shape of buried InxGa1-xAs/GaAs quantum dots
X. Z. Liao, J. Zou, X. F. Duan, D. J. H. Cockayne, R. Leon and C. Lobo
Phys. Rev. B 58, R4235 (1998)
- Raman study of interface modes subjected to strain in InAs/GaAs self-assembled quantum dots
Yu. A. Pusep, G. Zanelatto, S. W. da Silva, J. C. Galzerani, P. P. Gonzalez-Borrero, A. I. Toropov and P. Basmaji
Phys. Rev. B 58, R1770 (1998)
- Structural and radiative evolution in quantum dots near the InxGa1-xAs/GaAs Stranski-Krastanow transformation
R. Leon and S. Fafard
Phys. Rev. B 58, R1726 (1998)
- Blue-light emission from GaN self-assembled quantum dots due to giant piezoelectric effect
F. Widmann, J. Simon, B. Daudin, G. Feuillet, J. L. Rouvière, N. T. Pelekanos and G. Fishman
Phys. Rev. B 58, R15989 (1998)
- Composition of InAs quantum dots on GaAs(001): Direct evidence for (In,Ga)As alloying
P. B. Joyce, T. J. Krzyzewski, G. R. Bell, B. A. Joyce and T. S. Jones
Phys. Rev. B 58, R15981 (1998)
- Polarized photoluminescence spectroscopy of single self-assembled InAs quantum dots
Y. Toda, S. Shinomori, K. Suzuki, and Y. Arakawa
Phys. Rev. B 58, R10147 (1998)
- Scanning transmission-electron microscopy study of InAs/GaAs quantum dots
P. D. Siverns, S. Malik, G. McPherson, D. Childs, C. Roberts, R. Murray, B. A. Joyce and H. Davock
Phys. Rev. B 58, R10127 (1998)
- Mode assignment of excited states in self-assembled InAs/GaAs quantum dots
Susumu Noda, Tomoki Abe, and Masatoshi Tamura
Phys. Rev. B 58, 7181 (1998)
- Effect of interfacial states on the binding energies of electrons and holes in InAs/GaAs quantum dots
A. J. Williamson and Alex Zunger
Phys. Rev. B 58, 6724 (1998)
- Exciton complexes in InxGa1-xAs/GaAs quantum dots
M. Bayer, T. Gutbrod, A. Forchel, V. D. Kulakovskii, A. Gorbunov, M. Michel, R. Steffen, and K. H. Wang
Phys. Rev. B 58, 4740 (1998)
- Photoluminescence of charged InAs self-assembled quantum dots
K. H. Schmidt, G. Medeiros-Ribeiro and P. M. Petroff
Phys. Rev. B 58, 3597 (1998)
- Electronic structures of InAs self-assembled quantum dots in an axial magnetic field
Shu-Shen Li and Jian-Bai Xia
Phys. Rev. B 58, 3561 (1998)
- InAs self-assembled quantum dots as controllable scattering centers near a two-dimensional electron gas
E. Ribeiro, E. Müller, T. Heinzel, H. Auderset, K. Ensslin, G. Medeiros-Ribeiro and P. M. Petroff
Phys. Rev. B 58, 1506 (1998)
- Resonant Raman scattering in InP/In0.48Ga0.52P quantum dot structures embedded in a waveguide
A. A. Sirenko, M. K. Zundel, T. Ruf, K. Eberl, and M. Cardona
Phys. Rev. B 58, 12633 (1998)
- Effects of interface-layers composition and strain distribution on the optical transitions of InAs quantum dots on InP
H. Folliot, S. Loualiche, B. Lambert, V. Drouot and A. Le Corre
Phys. Rev. B 58, 10700 (1998)
- In-plane polarized intraband absorption in InAs/GaAs self-assembled quantum dots
S. Sauvage, P. Boucaud, J.-M. Gérard and V. Thierry-Mieg
Phys. Rev. B 58, 10562 (1998)
- Rapid carrier relaxation in In0.4Ga0.6As/GaAs quantum dots characterized by differential transmission spectroscopy
T. S. Sosnowski, T. B. Norris, H. Jiang, J. Singh, K. Kamath, and P. Bhattacharya
Phys. Rev. B 57, R9423 (1998)
- Comparison of the electronic structure of InAs/GaAs pyramidal quantum dots with different facet orientations
Jeongnim Kim, Lin-Wang Wang, and Alex Zunger
Phys. Rev. B 57, R9408 (1998)
- Optical anisotropy in arrow-shaped InAs quantum dots
M. Henini, S. Sanguinetti*, S. C. Fortina, E. Grilli, M. Guzzi, G. Panzarini, L. C. Andreani, M. D. Upward, P. Moriarty, P. H. Beton, and L. Eaves
Phys. Rev. B 57, R6815 (1998)
- Magneto-optical studies of self-organized InAs/GaAs quantum dots
L. R. Wilson, D. J. Mowbray , M. S. Skolnick, M. Morifuji, M. J. Steer, I. A. Larkin and M. Hopkinson
Phys. Rev. B 57, R2073 (1998)
- Excitons in InP quantum dots
Huaxiang Fu and Alex Zunger
Phys. Rev. B 57, R15064 (1998)
- Magneto-optical properties of strain-induced InxGa1-xAs parabolic quantum dots
R. Rinaldi, R. Mangino, R. Cingolani, H. Lipsanen, M. Sopanen, J. Tulkki, M. Brasken and J. Ahopelto
Phys. Rev. B 57, 9763 (1998)
- Excited states and energy relaxation in stacked InAs/GaAs quantum dots
R. Heitz, A. Kalburge, Q. Xie, M. Grundmann, P. Chen, A. Hoffmann, A. Madhukar and D. Bimberg
Phys. Rev. B 57, 9050 (1998)
- Eight-band calculations of strained InAs/GaAs quantum dots compared with one-, four-, and six-band approximations
Craig Pryor
Phys. Rev. B 57, 7190 (1998)
- Carrier dynamics in type-II GaSb/GaAs quantum dots
F. Hatami, M. Grundmann, N. N. Ledentsov, F. Heinrichsdorff, R. Heitz, J. Böhrer, D. Bimberg, S. S. Ruvimov, and P. Werner, V. M. Ustinov, P. S. Kop
Phys. Rev. B 57, 4635 (1998)
- Self-consistent calculation of the electronic structure and electron-electron interaction in self-assembled InAs-GaAs quantum dot structures
L. R. C. Fonseca and J. L. Jimenez
Phys. Rev. B 57, 4017 (1998)
- Time-resolved luminescence of InP quantum dots in a Ga0.5In0.5P matrix: Carrier injection from the matrix
Tsuyoshi Okuno, Hong-Wen Ren, Mitsuru Sugisaki, Kenichi Nishi, Shigeo Sugou and Yasuaki Masumoto
Phys. Rev. B 57, 1386 (1998)
- Strain-energy distribution and electronic structure of InAs pyramidal quantum dots with uncovered surfaces: Tight-binding analysis
T. Saito, J. N. Schulman, and Y. Arakawa
Phys. Rev. B 57, 13016 (1998)
- Suppression of Ostwald ripening in In0.5Ga0.5As quantum dots on a vicinal (100) substrate
Byung Don Min, Yong Kim, Eun Kyu Kim, Suk-Ki Min and Department of Physics, Korea University, Seoul 136-701, Korea
Phys. Rev. B 57, 11879 (1998)
- High-power continuous-wave operation of a InGaAs/AlGaAs quantum dot laser
M. V. Maximov, Yu. M. Shernyakov, A. F. Tsatsul'nikov, A. V. Lunev, A. V. Sakharov, V. M. Ustinov, A. Yu. Egorov, A. E. Zhukov, A. R. Kovsh, P. S. Kop'ev, L. V. Asryan, Zh. I. Alferov, N. N. Ledentsov, D. Bimberg, A. O. Kosogov and P. Werner
J. Appl. Phys., 83, 5561 (1998)
- Longitudinal mode grouping in InGaAs/GaAs/AlGaAs quantum dot lasers: origin and means of control
O'Reilly, E.P. Onischenko, A.I. Avrutin, E.A. Bhattacharyya, D. Marsh, J.H.
Electron. Lett., 34, 2035 (1998)
- Injection lasers with vertically aligned InP/GaInP quantum dots: Dependence of the threshold current on temperature and dot size
T. Riedl, E. Fehrenbacher, A. Hangleiter, M. K. Zundel and K. Eberl
Appl. Phys. Lett., 73, 3730 (1998)
- Influence of GaAs capping on the optical properties of InGaAs/GaAs surface quantum dots with 1.5
Hideaki Saito, Kenichi Nishi, and Shigeo Sugou
Appl. Phys. Lett., 73, 2742 (1998)
- 1.3
D. L. Huffaker, G. Park, Z. Zou, O. B. Shchekin, and D. G. Deppe
Appl. Phys. Lett., 73, 2564 (1998)
- Red-light-emitting injection laser based on InP/GaInP self-assembled quantum dots
M. K. Zundel, N. Y. Jin-Phillipp, F. Phillipp, K. Eberl, T. Riedl, E. Fehrenbacher, and A. Hangleiter
Appl. Phys. Lett., 73, 1784 (1998)