1999 year
- Enhanced Polar Exciton-LO-Phonon Interaction in Quantum Dots
R. Heitz, I. Mukhametzhanov, O. Stier, A. Madhukar, and D. Bimberg
Phys. Rev. Lett. 83, 4654 (1999)
- Indium Segregation and Enrichment in Coherent InxGa1
X. Z. Liao, J. Zou, D. J. H. Cockayne, R. Leon, and C. Lobo
Phys. Rev. Lett. 82, 5148 (1999)
- Efficient Carrier Relaxation Mechanism in InGaAs/GaAs Self-Assembled Quantum Dots Based on the Existence of Continuum States
Y. Toda, O. Moriwaki, M. Nishioka, and Y. Arakawa
Phys. Rev. Lett. 82, 4114 (1999)
- Electron and Hole g Factors and Exchange Interaction from Studies of the Exciton Fine Structure in In0.60Ga0.40As Quantum Dots
M. Bayer, A. Kuther, A. Forchel, A. Gorbunov, V. B. Timofeev, F. Schäfer, J. P. Reithmaier. T. L. Reinecke and S. N. Walck
Phys. Rev. Lett. 82, 1748 (1999)
- Electron-filling modulation reflectance in charged self-assembled InxGa1
T. M. Hsu, W.-H. Chang, K. F. Tsai, J.-I. Chyi, N. T. Yeh, and T. E. Nee
Phys. Rev. B 60, R2189 (1999)
- Excited states and selection rules in self-assembled InAs/GaAs quantum dots
I. E. Itskevich, M. S. Skolnick, D. J. Mowbray, I. A. Trojan. S. G. Lyapin, L. R. Wilson, M. J. Steer, M. Hopkinson, L. Eaves and P. C. Main
Phys. Rev. B 60, R2185 (1999)
- Modification of the Fermi-level pinning of GaAs surfaces through InAs quantum dots
C. Walther, R. P. Blum, H. Niehus, W. T. Masselink and A. Thamm
Phys. Rev. B 60, R13962 (1999)
- Electronic structure of self-assembled InAs quantum dots in InP: An anisotropic quantum-dot system
H. Pettersson, R. J. Warburton, J. P. Kotthaus, N. Carlsson, W. Seifert, M.-E. Pistol, and L. Samuelson
Phys. Rev. B 60, R11289 (1999)
- Scaling properties of InAs/GaAs self-assembled quantum dots
Y. Ebiko, S. Muto, D. Suzuki, S. Itoh, H. Yamakoshi, K. Shiramine, T. Haga, K. Unno and M. Ikeda
Phys. Rev. B 60, 8234 (1999)
- Dephasing in InAs/GaAs quantum dots
P. Borri, W. Langbein, J. Mørk, J. M. Hvam, F. Heinrichsdorff, M.-H. Mao, and D. Bimberg
Phys. Rev. B 60, 7784 (1999)
- Electron dynamics of a two-dimensional electron gas with a random array of InAs quantum dots
S. Cinà, D. D. Arnone, H. P. Hughes, C. L. Foden, D. M. Whittaker, M. Pepper and D. A. Ritchie
Phys. Rev. B 60, 7780 (1999)
- Geometry and material parameter dependence of InAs/GaAs quantum dot electronic structure
Craig Pryor
Phys. Rev. B 60, 2869 (1999)
- Optical investigations of individual InAs quantum dots: Level splittings of exciton complexes
L. Landin, M.-E. Pistol, C. Pryor, M. Persson, L. Samuelson, and M. Miller
Phys. Rev. B 60, 16640 (1999)
- Strain distribution and optical phonons in InAs/InP self-assembled quantum dots
J. Groenen, C. Priester and R. Carles
Phys. Rev. B 60, 16013 (1999)
- Real-time monitoring of InAs/GaAs quantum dot growth using ultraviolet light scattering
T. Pinnington, Y. Levy, J. A. MacKenzie, and T. Tiedje
Phys. Rev. B 60, 15901 (1999)
- Midinfrared unipolar photoluminescence in InAs/GaAs self-assembled quantum dots
S. Sauvage, P. Boucaud, T. Brunhes, A. Lemaître and J.-M. Gérard
Phys. Rev. B 60, 15589 (1999)
- Electron escape from InAs quantum dots
C. M. A. Kapteyn, F. Heinrichsdorff, O. Stier, R. Heitz, M. Grundmann, N. D. Zakharov, D. Bimberg and P. Werner
Phys. Rev. B 60, 14265 (1999)
- Third-harmonic generation in InAs/GaAs self-assembled quantum dots
S. Sauvage, P. Boucaud, F. Glotin, R. Prazeres, J.-M. Ortega, A. Lemaître, J.-M. Gérard, and V. Thierry-Mieg
Phys. Rev. B 59, 9830 (1999)
- Optical properties of InAs quantum dots: Common trends
M. Grassi Alessi, M. Capizzi, A. S. Bhatti, A. Frova, F. Martelli, P. Frigeri, A. Bosacchi, and S. Franchi
Phys. Rev. B 59, 7620 (1999)
- Electronic structures of [110]-faceted self-assembled pyramidal InAs/GaAs quantum dots
Lin-Wang Wang, Jeongnim Kim, and Alex Zunger
Phys. Rev. B 59, 5678 (1999)
- Temperature dependence of the optical properties of InAs/AlyGa1
A. Polimeni, A. Patanè, M. Henini, L. Eaves, and P. C. Main
Phys. Rev. B 59, 5064 (1999)
- Carrier capture and escape in InxGa1
S. Marcinkeviius and R. Leon
Phys. Rev. B 59, 4630 (1999)
- InAs quantum dots: Predicted electronic structure of free-standing versus GaAs-embedded structures
A. J. Williamson and Alex Zunger
Phys. Rev. B 59, 15819 (1999)
- Transmission electron microscopy study of InxGa1
J. Zou, X. Z. Liao, D. J. H. Cockayne and R. Leon
Phys. Rev. B 59, 12279 (1999)
- Optical characteristics of 1.24-μm InAs quantum-dot laser diodes
Lester, L.F. Stintz, A. Li, H. Newell, T.C. Pease, E.A. Fuchs, B.A. Malloy, K.J.
IEEE J. Phot. Technol. Lett., 11, 931 (1999)
- Temperature dependence of lasing characteristics for long-wavelength (1.3-μm) GaAs-based quantum-dot lasers
Park, G. Huffaker, D.L. Zou, Z. Shchekin, O.B. Deppe, D.G.
IEEE J. Phot. Technol. Lett., 11, 303 (1999)
- 1.3-μm CW lasing of InGaAs-GaAs quantum dots at room temperature with a threshold current of 8 mA
Mukai, K. Nakata, Y. Otsubo, K. Sugawara, M. Yokoyama, N. Ishikawa, H.
IEEE J. Phot. Technol. Lett., 11, 1205 (1999)
- Effect of GaAs(0 0 1) surface misorientation on the emission from MBE grown InAs quantum dots
I. V. Kudryashov, , V. P. Evtikhiev, V. E. Tokranov, E. Yu. Kotel'nikov, A. K. Kryganovskii and A. N. Titkov
J. Crys.Growth, 202, 1158 (1999)
- Characteristics of the InAs quantum dots MBE grown on the vicinal GaAs(0 0 1) surfaces misoriented to the [0 1 0] direction
V. P. Evtikhiev, V. E. Tokranov, A. K. Kryganovskii, A. M. Boiko, R. A. Suris and A. N. Titkov
J. Crys. Growth, 202, 1154 (1999)
- 1.3 /spl mu/m GaAs-based laser using quantum dots obtained by activated spinodal decomposition
Shernyakov, Yu.M. Bedarev, D.A. Kondrat'eva, E.Yu. Kop'ev, P.S. Kovsh, A.R. Maleev, N.A. Maximov, M.V. Mikhrin, S.S. Tsatsul'nikov, A.F. Ustinov, V.M. Volovik, B.V. Zhukov, A.E. Alferov, Zh.I. Ledentsov, N.N. Bimberg, D.
Electron. Lett., 35, 898 (1999)
- Extremely low room-temperature threshold current density diode lasers using InAs dots in In0.15Ga0.85As quantum well
Liu, G. Stintz, A. Li, H. Malloy, K.J. Lester, L.F.
Electron. Lett., 35, 1163 (1999)
- Optical and structural properties of InAs quantum dots in a GaAs matrix for a spectral range up to 1.7
M. V. Maximov, A. F. Tsatsul'nikov, B. V. Volovik, D. A. Bedarev, A. Yu. Egorov, A. E. Zhukov, A. R. Kovsh, N. A. Bert, V. M. Ustinov, P. S. Kop'ev, Zh. I. Alferov, N. N. Ledentsov, D. Bimberg, I. P. Soshnikov and P. Werner
Appl. Phys. Lett., 75, 2347 (1999)
- High-performance GaInAs/GaAs quantum-dot lasers based on a single active layer
F. Schäfer, J. P. Reithmaier, and A. Forchel
Appl. Phys. Lett., 74, 2915 (1999)
- InAs/InGaAs quantum dot structures on GaAs substrates emitting at 1.3
V. M. Ustinov, N. A. Maleev, A. E. Zhukov, A. R. Kovsh, A. Yu. Egorov, A. V. Lunev, B. V. Volovik, I. L. Krestnikov, Yu. G. Musikhin, N. A. Bert, P. S. Kop'ev, Zh. I. Alferov, N. N. Ledentsov and D. Bimberg
Appl. Phys. Lett., 74, 2815 (1999)
- Light emission spectra of columnar-shaped self-assembled InGaAs/GaAs quantum-dot lasers: Effect of homogeneous broadening of the optical gain on lasing characteristics
Mitsuru Sugawara, Kohki Mukai, and Yoshiaki Nakata
Appl. Phys. Lett., 74, 1561 (1999)