2000 year
- Inverted Electron-Hole Alignment in InAs-GaAs Self-Assembled Quantum Dots
P. W. Fry, I. E. Itskevich, D. J. Mowbray, M. S. Skolnick, J. J. Finley, J. A. Barker, E. P. O'Reilly, L. R. Wilson, I. A. Larkin, P. A. Maksym, M. Hopkinson, M. Al-Khafaji, J. P. R. David, A. G. Cullis, G. Hill, and J. C. Clark
Phys. Rev. Lett. 84, 733 (2000)
- Evidence for Phase-Separated Quantum Dots in Cubic InGaN Layers from Resonant Raman Scattering
V. Lemos, E. Silveira, J. R. Leite, A. Tabata, R. Trentin, L. M. R. Scolfaro, T. Frey, D. J. As, D. Schikora, and K. Lischka
Phys. Rev. Lett. 84, 3666 (2000)
- Nonuniform Composition Profile in In0.5Ga0.5As Alloy Quantum Dots
N. Liu, J. Tersoff, O. Baklenov, A. L. Holmes, Jr., and C. K. Shih
Phys. Rev. Lett. 84, 334 (2000)
- Double-resonance spectroscopy of InAs/GaAs self-assembled quantum dots
B. N. Murdin, A. R. Hollingworth, J. A. Barker, D. G. Clarke, P. C. Findlay, C. R. Pidgeon, J.-P. R. Wells, I. V. Bradley, S. Malik and R. Murray
Phys. Rev. B 62, R7755 (2000)
- Magnetoluminescence of highly excited InAs/GaAs self-assembled quantum dots
P. P. Paskov, P. O. Holtz, B. Monemar, J. M. Garcia, W. V. Schoenfeld, and P. M. Petroff
Phys. Rev. B 62, 7344 (2000)
- Size distribution in self-assembled InAs quantum dots on GaAs (001) for intermediate InAs coverage
H. Kissel, U. Müller, C. Walther, W. T. Masselink, Yu. I. Mazur, G. G. Tarasov, and M. P. Lisitsa
Phys. Rev. B 62, 7213 (2000)
- Photocurrent studies of the carrier escape process from InAs self-assembled quantum dots
W.-H. Chang, T. M. Hsu, C. C. Huang, S. L. Hsu, C. Y. Lai, N. T. Yeh, T. E. Nee, and J.-I. Chyi
Phys. Rev. B 62, 6959 (2000)
- Origin of the inhomogenous broadening and alloy intermixing in InAs/GaAs self-assembled quantum dots
Nathalie Perret, Denis Morris, Loic Franchomme-Fossé, René Côté, Simon Fafard, Vincent Aimez and Jacques Beauvais
Phys. Rev. B 62, 5092 (2000)
- Optical evidence of polaron interaction in InAs/GaAs quantum dots
M. Bissiri, G. Baldassarri Höger von Högersthal, A. S. Bhatti, M. Capizzi, A. Frova, P. Frigeri and S. Franchi
Phys. Rev. B 62, 4642 (2000)
- Carrier capture and relaxation in Stranski-Krastanow InxGa1
C. Lobo, N. Perret, D. Morris, J. Zou, D. J. H. Cockayne, M. B. Johnston, M. Gal and R. Leon
Phys. Rev. B 62, 2737 (2000)
- Pseudopotential calculations of electron and hole addition spectra of InAs, InP, and Si quantum dots
Alberto Franceschetti and Alex Zunger
Phys. Rev. B 62, 2614 (2000)
- Pseudopotential calculations of electron and hole addition spectra of InAs, InP, and Si quantum dots
Alberto Franceschetti and Alex Zunger
Phys. Rev. B 62, 2614 (2000)
- Size, shape, and stability of InAs quantum dots on the GaAs(001) substrate
L. G. Wang, P. Kratzer, N. Moll, and M. Scheffler
Phys. Rev. B 62, 1897 (2000)
- Many-body effects on the optical spectra of InAs/GaAs quantum dots
R. Heitz, F. Guffarth, I. Mukhametzhanov, M. Grundmann, A. Madhukar, and D. Bimberg
Phys. Rev. B 62, 16881 (2000)
- Photocurrent spectroscopy of InAs/GaAs self-assembled quantum dots
P. W. Fry, I. E. Itskevich, S. R. Parnell, J. J. Finley, L. R. Wilson, K. L. Schumacher, D. J. Mowbray, M. S. Skolnick, M. Al-Khafaji, A. G. Cullis, M. Hopkinson, J. C. Clark, and G. Hill
Phys. Rev. B 62, 16784 (2000)
- Theory of the electronic structure of GaN/AlN hexagonal quantum dots
A. D. Andreev and E. P. O'Reilly
Phys. Rev. B 62, 15 851 (2000)
- Modeling self-assembled quantum dots by the effective bond-orbital method
Sophia J. Sun and Yia-Chung Chang
Phys. Rev. B 62, 13631 (2000)
- Modulation of the luminescence spectra of InAs self-assembled quantum dots by resonant tunneling through a quantum well
A. Patanè, A. Polimeni, L. Eaves, P. C. Main, M. Henini, A. E. Belyaev, Yu. V. Dubrovskii, P. N. Brounkov, E. E. Vdovin, Yu. N. Khanin and G. Hill
Phys. Rev. B 62, 13595 (2000)
- Modulation of the luminescence spectra of InAs self-assembled quantum dots by resonant tunneling through a quantum well
A. Patanè, A. Polimeni, L. Eaves, P. C. Main, M. Henini, A. E. Belyaev, Yu. V. Dubrovskii, P. N. Brounkov, E. E. Vdovin, Yu. N. Khanin and G. Hill
Phys. Rev. B 62, 13595 (2000)
- Carrier capture processes in strain-induced InxGa1
C. Lingk, W. Helfer, G. von Plessen, J. Feldmann, K. Stock, M. W. Feise, D. S. Citrin, H. Lipsanen, M. Sopanen, R. Virkkala, J. Tulkki and J. Ahopelto
Phys. Rev. B 62, 13588 (2000)
- Electron distribution and level occupation in an ensemble of InxGa1
W.-H. Chang, T. M. Hsu, N. T. Yeh and J.-I. Chyi
Phys. Rev. B 62, 13040 (2000)
- Theoretical interpretation of the experimental electronic structure of lens-shaped self-assembled InAs/GaAs quantum dots
A. J. Williamson, L. W. Wang, and Alex Zunger
Phys. Rev. B 62, 12963 (2000)
- Magnetic-field-induced singularities in spin-dependent tunneling through InAs quantum dots
I. Hapke-Wurst, U. Zeitler, H. Frahm, A. G. M. Jansen, R. J. Haug, and K. Pierz
Phys. Rev. B 62, 12621 (2000)
- Cascade evolution and radiative recombination of quantum dot multiexcitons studied by time-resolved spectroscopy
E. Dekel, D. V. Regelman, D. Gershoni, E. Ehrenfreund, W. V. Schoenfeld and P. M. Petroff
Phys. Rev. B 62, 11038 (2000)
- Quantum size effect in self-organized InAs/GaAs quantum dots
R. Heitz, O. Stier, I. Mukhametzhanov, A. Madhukar, and D. Bimberg
Phys. Rev. B 62, 11017 (2000)
- Electron and hole confinement in stacked self-assembled InP quantum dots
M. Hayne, R. Provoost, M. K. Zundel, Y. M. Manz, K. Eberl and V. V. Moshchalkov
Phys. Rev. B 62, 10324 (2000)
- Phonon-assisted biexciton generation in a single quantum dot
F. Findeis, A. Zrenner, G. Böhm, and G. Abstreiter
Phys. Rev. B 61, R10579 (2000)
- Acoustic-phonon Raman scattering in InAs/InP self-assembled quantum dots
J. R. Huntzinger, J. Groenen, M. Cazayous, A. Mlayah, N. Bertru, C. Paranthoen, O. Dehaese, H. Carrère, E. Bedel and G. Armelles
Phys. Rev. B 61, R10547 (2000)
- Temperature-dependent linewidth of single InP/GaxIn1
ndP. G. Blome, M. Wenderoth, M. Hübner, R. G. Ulbrich, J. Porsche and F. Scholz
Phys. Rev. B 61, 8382 (2000)
- Wave-vector dependence of spin and density multipole excitations in quantum dots
Manuel Barranco, Leonardo Colletti, Enrico Lipparini, Agustí Emperador, Martí Pi and Llorenç Serra
Phys. Rev. B 61, 8289 (2000)
- Evidence for strain in and around InAs quantum dots in GaAs from ion-channeling experiments
L. J. M. Selen, L. J. van IJzendoorn, M. J. A. de Voigt and P. M. Koenraad
Phys. Rev. B 61, 8270 (2000)
- Effect of homogeneous broadening of optical gain on lasing spectra in self-assembled InxGa1
Mitsuru Sugawara, Kohki Mukai, Yoshiaki Nakata, Hiroshi Ishikawa and Akira Sakamoto
Phys. Rev. B 61, 7595 (2000)
- Spectroscopic study of dark excitons in InxGa1
M. Bayer, O. Stern, A. Kuther, and A. Forchel
Phys. Rev. B 61, 7273 (2000)
- Infrared second-order optical susceptibility in InAs/GaAs self-assembled quantum dots
T. Brunhes, P. Boucaud, S. Sauvage, A. Lemaître, J.-M. Gérard, F. Glotin, R. Prazeres, and J.-M. Ortega
Phys. Rev. B 61, 5562 (2000)
- Experimental determination of local Strain effect on InAs/GaAs self-organized quantum dots
H. L. Wang, F. H. Yang, S. L. Feng, H. J. Zhu, D. Ning, H. Wang, and X. D. Wang
Phys. Rev. B 61, 5530 (2000)
- Capacitance-voltage profile in a structure with negative differential capacitance caused by the presence of InAs/GaAs self-assembled quantum dots
A. J. Chiquito, Yu. A. Pusep, S. Mergulhão, J. C. Galzerani and N. T. Moshegov
Phys. Rev. B 61, 5499 (2000)
- Electrical and optical properties of self-assembled InAs quantum dots in InP studied by space-charge spectroscopy and photoluminescence
H. Pettersson, C. Pryor, L. Landin, M.-E. Pistol, N. Carlsson, W. Seifert, and L. Samuelson
Phys. Rev. B 61, 4795 (2000)
- Effect of photogenerated holes on capacitance-voltage measurements in InAs/GaAs self-assembled quantum dots
A. J. Chiquito, Yu. A. Pusep, S. Mergulhão, J. C. Galzerani and N. T. Moshegov
Phys. Rev. B 61, 4481 (2000)
- Electronic structure of self-organized InAs/GaAs quantum dots bounded by {136} facets
Weidong Yang, Hao Lee, Thomas J. Johnson, Peter C. Sercel and A. G. Norman
Phys. Rev. B 61, 2784 (2000)
- Pseudopotential study of electron-hole excitations in colloidal free-standing InAs quantum dots
A. J. Williamson and Alex Zunger
Phys. Rev. B 61, 1978 (2000)
- Scanning tunneling spectroscopy of InAs nanocrystal quantum dots
Oded Millo, David Katz, YunWei Cao and Uri Banin
Phys. Rev. B 61, 16773 (2000)
- Photoluminescence of InAs quantum dots in n-i-p-i GaAs superlattice
J. Z. Wang, Z. M. Wang, Z. G. Wang, Y. H. Chen and Z. Yang
Phys. Rev. B 61, 15614 (2000)
- Photoluminescence of InAs quantum dots in n-i-p-i GaAs superlattice
J. Z. Wang, Z. M. Wang, Z. G. Wang, Y. H. Chen and Z. Yang
Phys. Rev. B 61, 15614 (2000)
- Theoretical analysis of electron-hole alignment in InAs-GaAs quantum dots
J. A. Barker and E. P. O'Reilly
Phys. Rev. B 61, 13840 (2000)
- Presentation and experimental validation of a single-band, constant-potential model for self-assembled InAs/GaAs quantum dots
M. Califano and P. Harrison
Phys. Rev. B 61, 10959 (2000)
- Self-assembled In0.5Ga0.5As quantum-dot lasers with doped active region
Nien-Tze Yeh Jia-Ming Lee Tzer-En Nee Jen-Inn Chyi
IEEE J. Phot. Technol. Lett., 12, 1123 (2000)
- Performance and physics of quantum-dot lasers with self-assembled columnar-shaped and 1.3-μm emitting InGaAs quantum dots
Sugawara, M. Mukai, K. Nakata, Y. Otsubo, K. Ishilkawa, H.
IEEE J. Select. Topics Quantum Electron., 6, 462 (2000)
- Continuous-wave low-threshold performance of 1.3-μm InGaAs-GaAs quantum-dot lasers
Huffaker, D.L. Park, G. Zou, Z. Shchekin, O.B. Deppe, D.G.
IEEE J. Select. Topics Quantum Electron., 6, 452 (2000)
- High-speed modulation and switching characteristics of In(Ga)As-Al(Ga)As self-organized quantum-dot lasers
Bhattacharya, P. Klotzkin, D. Qasaimeh, O. Zhou, W. Krishna, S. Zhu, D.
IEEE J. Select. Topics Quantum Electron., 6, 426 (2000)
- The influence of quantum-well composition on the performance of quantum dot lasers using InAs-InGaAs dots-in-a-well (DWELL) structures
Liu, G.T. Stintz, A. Li, H. Newell, T.C. Gray, A.L. Varangis, P.M. Malloy, K.J. Lester, L.F.
IEEE J. Quantum Electron., 36, 1272 (2000)
- InAs-InGaAs quantum dot VCSELs on GaAs substrates emitting at 1.3 μm
Lott, J.A. Ledentsov, N.N. Ustinov, V.M. Maleev, N.A. Zhukov, A.E. Kovsh, A.R. Maximov, M.V. Volovik, B.V. Alferov, Zh.I. Bimberg, D.
Electron. Lett., 36, 1384 (2000)