2000 year
- Radiative behavior of negatively charged excitons in CdTe-based quantum wells: A spectral and
V. Ciulin, P. Kossacki, S. Haacke, J.-D. Ganière, B. Deveaud, A. Esser, M. Kutrowski and T. Wojtowicz
Phys. Rev. B 62, R16310 (2000)
- Photoluminescence and radiative lifetime of trions in GaAs quantum wells
Axel Esser, Erich Runge, Roland Zimmermann and Wolfgang Langbein
Phys. Rev. B 62, 8232 (2000)
- Negatively charged trion in ZnSe single quantum wells with very low electron densities
O. Homburg, K. Sebald, P. Michler, J. Gutowski, H. Wenisch and D. Hommel
Phys. Rev. B 62, 7413 (2000)
- Excitonic photoluminescence quenching by impact ionization of excitons and donors in GaAs/Al0.35Ga0.65As quantum wells with an in-plane electric field
J. Kundrotas, G. Valuis, A. sna, A. Kundrotait, A. Dargys, A. Suiedlis, J. Gradauskas, S. Amontas and K. Köhler
Phys. Rev. B 62, 15871 (2000)
- Bound exciton effect and carrier escape mechanisms in temperature-dependent surface
Shouvik Datta, B. M. Arora, and Shailendra Kumar
Phys. Rev. B 62, 13604 (2000).
- Periodicity and thickness effects in the cross section of quantum well states
A. Mugarza, J. E. Ortega, A. Mascaraque, E. G. Michel, K. N. Altmann, and F. J. Himpsel
Phys. Rev. B 62, 12672 (2000)
- Mechanism for photoluminescence in an InyAs1
J. C. Fan, W. K. Hung, Y. F. Chen, J. S. Wang and H. H. Lin
Phys. Rev. B 62, 10990 (2000)
- Layer interface roughness effects in the coherent intraband transitions of excitons in quantum well structures
S. M. Sadeghi and J. Meyer
Phys. Rev. B 61, 16841 (2000)
- Domain bistability in photoexcited GaAs multiple quantum wells
A. M. Tomlinson, A. M. Fox and C. T. Foxon
Phys. Rev. B 61, 12647 (2000)
- Competition between radiative decay and energy relaxation of carriers in disordered InxGa1
M. Grassi Alessi, F. Fragano, A. Patanè, M. Capizzi, E. Runge and R. Zimmermann
Phys. Rev. B 61, 10985 (2000)