1999 year
- Polaron Effects in Quantum Dots
M. A. Odnoblyudov, I. N. Yassievich, and K. A. Chao
Phys. Rev. Lett. 83, 4884 (1999)
- Enhanced Polar Exciton-LO-Phonon Interaction in Quantum Dots
R. Heitz, I. Mukhametzhanov, O. Stier, A. Madhukar, and D. Bimberg
Phys. Rev. Lett. 83, 4654 (1999)
- Biexciton versus Exciton Lifetime in a Single Semiconductor Quantum Dot
G. Bacher, R. Weigand, J. Seufert, V. D. Kulakovskii, N. A. Gippius, A. Forchel, K. Leonardi and D. Hommel
Phys. Rev. Lett. 83, 4417 (1999)
- Quantum Dot Exciton Dynamics through a Nanoaperture: Evidence for Two Confined States
L. M. Robinson, H. Rho, J. C. Kim, Howard E. Jackson, L. M. Smith, S. Lee, M. Dobrowolska, and J. K. Furdyna
Phys. Rev. Lett. 83, 2797 (1999)
- Efficient Carrier Relaxation Mechanism in InGaAs/GaAs Self-Assembled Quantum Dots Based on the Existence of Continuum States
Y. Toda, O. Moriwaki, M. Nishioka, and Y. Arakawa
Phys. Rev. Lett. 82, 4114 (1999)
- Electronic States and Luminescence in Porous Silicon Quantum Dots: The Role of Oxygen
M. V. Wolkin, J. Jorne, P. M. Fauchet, G. Allan and C. Delerue
Phys. Rev. Lett. 82, 197 (1999)
- Ensemble interactions in strained semiconductor quantum dots
R. Leon, S. Marcinkeviius, X. Z. Liao, J. Zou, D. J. H. Cockayne and S. Fafard
Phys. Rev. B 60, R8517 (1999)
- Surface electronic structure modifications due to buried quantum dots
T. Meyer, M. Klemenc, and H. von Känel
Phys. Rev. B 60, R8493 (1999)
- Electron-filling modulation reflectance in charged self-assembled InxGa1
T. M. Hsu, W.-H. Chang, K. F. Tsai, J.-I. Chyi, N. T. Yeh, and T. E. Nee
Phys. Rev. B 60, R2189 (1999)
- Excited states and selection rules in self-assembled InAs/GaAs quantum dots
I. E. Itskevich, M. S. Skolnick, D. J. Mowbray, I. A. Trojan. S. G. Lyapin, L. R. Wilson, M. J. Steer, M. Hopkinson, L. Eaves and P. C. Main
Phys. Rev. B 60, R2185 (1999)
- Anti-Stokes photoluminescence of InP self-assembled quantum dots in the presence of electric current
Ivan V. Ignatiev, Igor E. Kozin, Hong-Wen Ren, Shigeo Sugou and Yasuaki Masumoto
Phys. Rev. B 60, R14001 (1999)
- Strong variation of the exciton g factors in self-assembled In0.60Ga0.40As quantum dots
M. Bayer, A. Kuther, F. Schäfer, J. P. Reithmaier, and A. Forchel
Phys. Rev. B 60, 8481 (1999)
- Carrier thermal escape and retrapping in self-assembled quantum dots
S. Sanguinetti, M. Henini, M. Grassi Alessi, M. Capizzi, P. Frigeri and S. Franchi
Phys. Rev. B 60, 8276 (1999)
- Dephasing in InAs/GaAs quantum dots
P. Borri, W. Langbein, J. Mørk, J. M. Hvam, F. Heinrichsdorff, M.-H. Mao, and D. Bimberg
Phys. Rev. B 60, 7784 (1999)
- Vertically self-organized Ge/Si(001) quantum dots in multilayer structures
Vinh Le Thanh, V. Yam, P. Boucaud, F. Fortuna, C. Ulysse, D. Bouchier, L. Vervoort, and J.-M. Lourtioz
Phys. Rev. B 60, 5851 (1999)
- Optical anisotropy in vertically coupled quantum dots
P. Yu, W. Langbein, K. Leosson, J. M. Hvam, N. N. Ledentsov, D. Bimberg, V. M. Ustinov, A. Yu. Egorov, A. E. Zhukov, A. F. Tsatsul'nikov, and Yu. G. Musikhin
Phys. Rev. B 60, 16680 (1999)
- Inhibited carrier transfer in ensembles of isolated quantum dots
C. Lobo, R. Leon, S. Marcinkeviius, W. Yang, P. C. Sercel, X. Z. Liao, J. Zou, and D. J. H. Cockayne
Phys. Rev. B 60, 16647 (1999)
- Optical investigations of individual InAs quantum dots: Level splittings of exciton complexes
L. Landin, M.-E. Pistol, C. Pryor, M. Persson, L. Samuelson, and M. Miller
Phys. Rev. B 60, 16640 (1999)
- Midinfrared unipolar photoluminescence in InAs/GaAs self-assembled quantum dots
S. Sauvage, P. Boucaud, T. Brunhes, A. Lemaître and J.-M. Gérard
Phys. Rev. B 60, 15589 (1999)
- Optical anisotropy in self-assembled InP quantum dots
Mitsuru Sugisaki, Hong-Wen Ren, Selvakumar V. Nair, Kenichi Nishi, Shigeo Sugou, Tsuyoshi Okuno and Yasuaki Masumoto
Phys. Rev. B 59, R5300 (1999)
- Optical properties of InAs quantum dots: Common trends
M. Grassi Alessi, M. Capizzi, A. S. Bhatti, A. Frova, F. Martelli, P. Frigeri, A. Bosacchi, and S. Franchi
Phys. Rev. B 59, 7620 (1999)
- Temperature dependence of the optical properties of InAs/AlyGa1
A. Polimeni, A. Patanè, M. Henini, L. Eaves, and P. C. Main
Phys. Rev. B 59, 5064 (1999)
- Time-resolved studies of single semiconductor quantum dots
Valéry Zwiller, Mats-Erik Pistol, Dan Hessman, Rolf Cederström, Werner Seifert, and Lars Samuelson
Phys. Rev. B 59, 5021 (1999)
- Carrier capture and escape in InxGa1
S. Marcinkeviius and R. Leon
Phys. Rev. B 59, 4630 (1999)
- Finely resolved transmission spectra and band structure of two-dimensional photonic crystals using emission from InAs quantum dots
D. Labilloy, H. Benisty, C. Weisbuch, C. J. M. Smith, T. F. Krauss, R. Houdré and U. Oesterle
Phys. Rev. B 59, 1649 (1999)
- Manipulating the energy levels of semiconductor quantum dots
S. Fafard, Z. R. Wasilewski, C. Ni. Allen, D. Picard, M. Spanner, J. P. McCaffrey, and P. G. Piva
Phys. Rev. B 59, 15368 (1999)
- Random telegraph noise in photoluminescence from individual self-assembled quantum dots
M-E. Pistol, P. Castrillo, D. Hessman, J. A. Prieto, and L. Samuelson
Phys. Rev. B 59, 10725 (1999)
- Effect of GaAs(0 0 1) surface misorientation on the emission from MBE grown InAs quantum dots
I. V. Kudryashov, , V. P. Evtikhiev, V. E. Tokranov, E. Yu. Kotel'nikov, A. K. Kryganovskii and A. N. Titkov
J. Crys.Growth, 202, 1158 (1999)
- Optical and structural properties of InAs quantum dots in a GaAs matrix for a spectral range up to 1.7
M. V. Maximov, A. F. Tsatsul'nikov, B. V. Volovik, D. A. Bedarev, A. Yu. Egorov, A. E. Zhukov, A. R. Kovsh, N. A. Bert, V. M. Ustinov, P. S. Kop'ev, Zh. I. Alferov, N. N. Ledentsov, D. Bimberg, I. P. Soshnikov and P. Werner
Appl. Phys. Lett., 75, 2347 (1999)
- InAs/InGaAs quantum dot structures on GaAs substrates emitting at 1.3
V. M. Ustinov, N. A. Maleev, A. E. Zhukov, A. R. Kovsh, A. Yu. Egorov, A. V. Lunev, B. V. Volovik, I. L. Krestnikov, Yu. G. Musikhin, N. A. Bert, P. S. Kop'ev, Zh. I. Alferov, N. N. Ledentsov and D. Bimberg
Appl. Phys. Lett., 74, 2815 (1999)