Photoluminescence
- Photoluminescence spectra of n -ZnO/ p -GaN:(Er + Zn) and p -AlGaN:(Er + Zn) heterostructures
M. M. Mezdrogina, V. V. Krivolapchuk, N. A. Feoktistov, É. Yu. Danilovskiĭ, R. V. Kuzmin, S. V. Razumov, S. A. Kukushkin and A. V. Osipov
Semiconductors, 2008, Volume 42, Number 7, 07660771
- Lateral ordering of GaAs nanowhiskers on GaAs(111)As and GaAs (110) surfaces during molecular-beam epitaxy
G. E. Cirlin, N. V. Sibirev, C. Sartel and J. -C. Harmand
Semiconductors, 2008, Volume 42, Number 6, 07100713
- Effect of high-power nanosecond and femtosecond laser pulses on silicon nanostructures
G. A. Kachurin, S. G. Cherkova, V. A. Volodin, D. V. Marin and M. Deutschmann
Semiconductors, 2008, Volume 42, Number 2, 01830187
- Study of the properties of a two-dimensional electron gas in p−-3C-SiC/n+-6H-SiC heterostructures at low temperatures
A. A. Lebedev, D. K. Nel
Semiconductors, 2005, Volume 39, Number 10, 11941196
- Manifestation of size-related quantum oscillations of the radiative exciton recombination time in the photoluminescence of silicon nanostructures
A. V. Sachenko, Yu. V. Kryuchenko, I. O. Sokolovskii and O. M. Sreseli
Semiconductors, 2004, Volume 38, Number 7, 08420848
- Excitonic recombination near the mobility edge in CdSe/ZnSe nanostructures
M. Ya. Valakh, M. P. Lisitsa, V. V. Strelchuk, M. V. Vuychik, S. V. Ivanov, A. A. Toropov, T. V. Shubina and P. S. Kop
Semiconductors, 2003, Volume 37, Number 11, 13361341
- Band-edge line-up in GaAs/GaAsN/InGaAs heterostructures
A. Yu. Egorov, V. A. Odnoblyudov, N. V. Krizhanovskaya, V. V. Mamutin and V. M. Ustinov
Semiconductors, 2002, Volume 36, Number 12, 13551359
- Kinetics of exciton photoluminescence in low-dimensional silicon structures
A. V. Sachenko, É. B. Kaganovich, É. G. Manoilov and S. V. Svechnikov
Semiconductors, 2001, Volume 35, Number 12, 13831389
- Photoelectric phenomena in (μcxa1−x)-Si:H/c-Si heterostructures
H. Mell, Yu. A. Nikolaev, V. Yu. Rud
Semiconductors, 2001, Volume 35, Number 11, 12591262
- Self-organizing nanoheterostructures in InGaAsP solid solutions
L. S. Vavilova, A. V. Ivanova, V. A. Kapitonov, A. V. Murashova, I. S. Tarasov, I. N. Arsent
Semiconductors, 1998, Volume 32, Number 6, 05900593
- Preparation and photosensitivity of heterostructures based on anodized silicon carbide
A. A. Lebedev, A. A. Lebedev, Yu. V. Rud
Semiconductors, 1998, Volume 32, Number 3, 02950296