Strained heterostructures
- Special features of structural interaction in (AlGaIn)N/GaN heterostructures used as dislocation filters
I. P. Soshnikov, N. N. Ledentsov, A. F. Tsatsul
Semiconductors, 2005, Volume 39, Number 1, 01000102
- Low-temperature relaxation of elastic stresses in SiGe/Si heterostructures irradiated with Ge+ ions
V. S. Avrutin, Yu. A. Agafonov, A. F. Vyatkin, V. I. Zinenko, N. F. Izyumskaya, D. V. Irzhak, D. V. Roshchupkin, É. A. Steinman, V. I. Vdovin and T. G. Yugova
Semiconductors, 2004, Volume 38, Number 3, 03130318
- The influence of carbon on the properties of Si/SiGe heterostructures
M. Ya. Valakh, V. N. Dzhagan, L. A. Matveeva, A. S. Oberemok, B. N. Romanyuk and V. A. Yukhimchuk
Semiconductors, 2003, Volume 37, Number 4, 04430447
- Influence of the misfit-dislocation screw component on the formation of threading dislocations in semiconductor heterostructures
E. M. Trukhanov, A. V. Kolesnikov, A. P. Vasilenko and A. K. Gutakovskii
Semiconductors, 2002, Volume 36, Number 3, 02900297
- Influence of an electric field on the strained state of a heterostructure
R. M. Peleshchak, B. A. Lukiyanets and G. G. Zegrya
Semiconductors, 2000, Volume 34, Number 10, 11721176