Acoustic properties
- Light-induced metal-insulator transition in n-GaAs/AlGaAs heterostructure: Acoustic methods of study
I. L. Drichko, A. M. D
Semiconductors, 2006, Volume 40, Number 12, 14151422
- Role of Si-doped Al0.3Ga0.7As layers in the high-frequency conductivity of GaAs/Al0.3Ga0.7As heterostructures under conditions of the quantum hall effect
I. L. Drichko, A. M. D
Semiconductors, 2004, Volume 38, Number 6, 07020711
- Nonlinearity of acoustic effects and high-frequency electrical conductivity in GaAs/AlGaAs heterostructures under conditions of the integer quantum Hall effect
I. L. Drichko, A. M. D
Semiconductors, 2000, Volume 34, Number 4, 04220428
- Contact-free determination of the parameters of a 2D electron gas in GaAs/AlGaAs heterostructures
I. L. Drichko and I. Yu. Smirnov
Semiconductors, 1997, Volume 31, Number 9, 09330935