Devices
- Low-noise photodiodes based on GaSb/GaInAsSb/AlGaAsSb double heterostructures for the 1
B. E. Zhurtanov, N. D. Il
Semiconductors, 2008, Volume 42, Number 4, 04580462
- High-power laser diodes of wavelength 808 nm based on various types of asymmetric heterostructures with an ultrawide waveguide
V. V. Bezotosnyĭ, V. V. Vasil
Semiconductors, 2008, Volume 42, Number 3, 03500353
- 1.8-μm laser diodes based on quantum-size AlInGaAs/InP heterostructures
A. V. Lyutetskiĭ, K. S. Borshchev, A. D. Bondarev, T. A. Nalet, N. A. Pikhtin, S. O. Slipchenko, N. V. Fetisova, M. A. Khomylev, A. A. Marmalyuk, Yu. L. Ryaboshtan, V. A. Simakov and I. S. Tarasov
Semiconductors, 2007, Volume 41, Number 7, 08600864
- High-efficiency LEDs based on n -GaSb/ p -GaSb/ n -GaInAsSb/ P -AlGaAsSb type-II thyristor heterostructures
N. D. Stoyanov, B. E. Zhurtanov, A. N. Imenkov, A. P. Astakhova, M. P. Mikhaĭlova and Yu. P. Yakovlev
Semiconductors, 2007, Volume 41, Number 7, 08550859
- Thermophotovoltaic cells based on In0.53Ga0.47As/InP heterostructures
L. B. Karlina, A. S. Vlasov, M. M. Kulagina and N. Kh. Timoshina
Semiconductors, 2006, Volume 40, Number 3, 03460350
- A ferroelectric field effect transistor based on a Pb(ZrxTi1−x)O3/SnO2 heterostructure
I. E. Titkov, I. P. Pronin, D. V. Mashovets, L. A. Delimova, I. A. Liniichuk and I. V. Grekhov
Semiconductors, 2005, Volume 39, Number 7, 08560860
- High-power flip-chip blue light-emitting diodes based on AlGaInN
D. A. Zakheim, I. P. Smirnova, I. V. Roznanskii, S. A. Gurevich, M. M. Kulagina, E. M. Arakcheeva, G. A. Onushkin, A. L. Zakheim, E. D. Vasil
Semiconductors, 2005, Volume 39, Number 7, 08510855
- Interfacial and interband lasing in an AnAs/InAsSbP heterostructure grown by vapor-phase epitaxy from metal-organic compounds
A. P. Astakhova, N. D. Il
Semiconductors, 2005, Volume 39, Number 4, 04720476
- GaAs/Ge heterostructure photovoltaic cells fabricated by a combination of MOCVD and zinc diffusion techniques
V. M. Andreev, V. P. Khvostikov, N. A. Kalyuzhnyi, S. S. Titkov, O. A. Khvostikova and M. Z. Shvarts
Semiconductors, 2004, Volume 38, Number 3, 03550359
- 1.7
A. V. Lyutetskii, N. A. Pikhtin, S. O. Slipchenko, Z. N. Sokolova, N. V. Fetisova, A. Yu. Leshko, V. V. Shamakhov, A. Yu. Andreev, E. G. Golikova, Yu. A. Ryaboshtan and I. S. Tarasov
Semiconductors, 2003, Volume 37, Number 11, 13561362
- High power single-mode (λ=1.3
A. Yu. Leshko, A. V. Lyutetskii, N. A. Pikhtin, S. O. Slipchenko, Z. N. Sokolova, N. V. Fetisova, E. G. Golikova, Yu. A. Ryaboshtan and I. S. Tarasov
Semiconductors, 2002, Volume 36, Number 11, 13081314
- Properties of diode heterostructures based on nanocrystalline n-SnO2 on p-Si under the conditions of gas Adsorption
R. B. Vasil
Semiconductors, 2000, Volume 34, Number 8, 09550959
- Long-wavelength light-emitting diodes (λ=3.4
N. V. Zotova, S. S. Kizhaev, S. S. Molchanov, T. B. Popova and Yu. P. Yakovlev
Semiconductors, 2000, Volume 34, Number 12, 14021405
- Heterostructure solar cells
V. M. Andreev
Semiconductors, 1999, Volume 33, Number 9, 09420945
- Linear Optics Controlled-Phase Gate Made Simple
Nikolai Kiesel, Christian Schmid, Ulrich Weber, Rupert Ursin, and Harald Weinfurter
Phys. Rev. Lett. 95, 210505 (2005)
- Electron Emission from Diamondoids: A Diffusion Quantum Monte Carlo Study
N. D. Drummond, A. J. Williamson, R. J. Needs, and G. Galli
Phys. Rev. Lett. 95, 096801 (2005)
- Voltage-controlled spin injection in a (Ga,Mn)As∕(Al,Ga)As Zener diode
P. Van Dorpe, W. Van Roy, J. De Boeck, G. Borghs, P. Sankowski, P. Kacman, J. A. Majewski, T. Dietl
Phys. Rev. B 72, 205322 (2005)
- Response of thin-film SQUIDs to applied fields and vortex fields: Linear SQUIDs
John R. Clem, Ernst Helmut Brandt
Phys. Rev. B 72, 174511 (2005)
- Experimental implementation of a discrete-time quantum random walk on an NMR quantum-information processor
C. A. Ryan, M. Laforest, J. C. Boileau, and R. Laflamme
Phys. Rev. A 72, 062317 (2005)