A2B6
- X-ray spectrum microanalysis of semiconductor epitaxial heterostructures on the basis of a monte carlo simulation of electron transport
T. B. Popova, L. A. Bakaleĭnikov, M. V. Zamoryanskaya and E. Yu. Flegontova
Semiconductors, 2008, Volume 42, Number 6, 06690674
- Resonance tunneling of charge carriers in photoexcited type-II ZnSe/BeTe heterostructures
S. V. Zaitsev, A. A. Maksimov, I. I. Tartakovskiĭ, D. R. Yakovlev and A. Waag
Semiconductors, 2008, Volume 42, Number 5, 05400544
- Spectral sensitivity of p-Cu1.8S/n−-ZnS/n-(II-VI) heterostructures
V. N. Komaschenko, K. V. Kolezhuk, N. V. Yaroshenko, G. I. Sheremetova and Yu. N. Bobrenko
Semiconductors, 2006, Volume 40, Number 3, 03270330
- Electrical properties of the p+-Bi2Te3-p-GaSe isotype heterostructure
S. I. Drapak, V. A. Manasson, V. V. Netyaga and Z. D. Kovalyuk
Semiconductors, 2003, Volume 37, Number 2, 01720177
- Structural, luminescent, and transport properties of hybrid AlAsSb/InAs/Cd(Mg)Se heterostructures grown by molecular beam epitaxy
V. A. Solov
Semiconductors, 2001, Volume 35, Number 4, 04190423