Structural properties
- Radiative recombination channels in Si/Si1 − x Ge x nanostructures
Yu. A. Berashevich, A. S. Panfilenok and V. E. Borisenko
Semiconductors, 2008, Volume 42, Number 1, 00670073
- Deep levels and electron transport in AlGaN/GaN heterostructures
I. V. Antonova, V. I. Polyakov, A. I. Rukavishnikov, V. G. Mansurov and K. S. Zhuravlev
Semiconductors, 2008, Volume 42, Number 1, 00520058
- Electronic structure of titanium disulfide nanostructures: Monolayers, nanostripes, and nanotubes
V. V. Ivanovskaya, G. Seifert and A. L. Ivanovskii
Semiconductors, 2005, Volume 39, Number 9, 10581065
- Nanostructuring of crystalline grains of natural diamond using ionizing radiation
N. A. Poklonski, T. M. Lapchuk, N. I. Gorbachuk, V. A. Nikolaenko and I. V. Bachuchin
Semiconductors, 2005, Volume 39, Number 8, 08940897
- Vegard
É. P. Domashevskaya, P. V. Seredin, É. A. Dolgopolova, I. E. Zanin, I. N. Arsent
Semiconductors, 2005, Volume 39, Number 3, 03360342
- Special features of structural interaction in (AlGaIn)N/GaN heterostructures used as dislocation filters
I. P. Soshnikov, N. N. Ledentsov, A. F. Tsatsul
Semiconductors, 2005, Volume 39, Number 1, 01000102
- Low-temperature relaxation of elastic stresses in SiGe/Si heterostructures irradiated with Ge+ ions
V. S. Avrutin, Yu. A. Agafonov, A. F. Vyatkin, V. I. Zinenko, N. F. Izyumskaya, D. V. Irzhak, D. V. Roshchupkin, É. A. Steinman, V. I. Vdovin and T. G. Yugova
Semiconductors, 2004, Volume 38, Number 3, 03130318
- Modification of the nanostructure of diamond-like carbon films by bombardment with xenon ions
I. A. Faizrakhmanov, V. V. Bazarov, A. L. Stepanov and I. B. Khaibullin
Semiconductors, 2003, Volume 37, Number 6, 07230726
- Determination of the parameters of multilayer nanostructures using two-wave X-ray reflectometry
N. L. Popov, Yu. A. Uspenskii, A. G. Turyanskii, I. V. Pirshin, A. V. Vinogradov and Yu. Ya. Platonov
Semiconductors, 2003, Volume 37, Number 6, 06750680
- Influence of the misfit-dislocation screw component on the formation of threading dislocations in semiconductor heterostructures
E. M. Trukhanov, A. V. Kolesnikov, A. P. Vasilenko and A. K. Gutakovskii
Semiconductors, 2002, Volume 36, Number 3, 02900297
- Kinetics of exciton photoluminescence in low-dimensional silicon structures
A. V. Sachenko, É. B. Kaganovich, É. G. Manoilov and S. V. Svechnikov
Semiconductors, 2001, Volume 35, Number 12, 13831389
- Structural, luminescent, and transport properties of hybrid AlAsSb/InAs/Cd(Mg)Se heterostructures grown by molecular beam epitaxy
V. A. Solov
Semiconductors, 2001, Volume 35, Number 4, 04190423
- GaInAsSb/GaSb heterostructures grown in the spinodal decay region by liquid-phase epitaxy from Sb-enriched solution-melts
V. I. Vasil
Semiconductors, 1999, Volume 33, Number 9, 10341036
- Magnetic-resonance spectroscopy of porous quantum-size structures
A. I. Mamykin, V. A. Moshnikov and A. Yu. Il
Semiconductors, 1998, Volume 32, Number 3, 03220324
- Link between Adatom Resonances and the Cu(111) Shockley Surface State
Jérôme Lagoute, Xi Liu, and Stefan Fölsch
Phys. Rev. Lett. 95, 136801 (2005)