Technology
- CdTe as a passivating layer in CdTe/HgCdTe heterostructures
I. S. Virt, I. V. Kurilo, I. A. Rudyĭ, F. F. Sizov, N. N. Mikhaĭlov and R. N. Smirnov
Semiconductors, 2008, Volume 42, Number 7, 07720776
- Photoluminescence spectra of n -ZnO/ p -GaN:(Er + Zn) and p -AlGaN:(Er + Zn) heterostructures
M. M. Mezdrogina, V. V. Krivolapchuk, N. A. Feoktistov, É. Yu. Danilovskiĭ, R. V. Kuzmin, S. V. Razumov, S. A. Kukushkin and A. V. Osipov
Semiconductors, 2008, Volume 42, Number 7, 07660771
- Lateral ordering of GaAs nanowhiskers on GaAs(111)As and GaAs (110) surfaces during molecular-beam epitaxy
G. E. Cirlin, N. V. Sibirev, C. Sartel and J. -C. Harmand
Semiconductors, 2008, Volume 42, Number 6, 07100713
- Resonance tunneling of charge carriers in photoexcited type-II ZnSe/BeTe heterostructures
S. V. Zaitsev, A. A. Maksimov, I. I. Tartakovskiĭ, D. R. Yakovlev and A. Waag
Semiconductors, 2008, Volume 42, Number 5, 05400544
- Low-noise photodiodes based on GaSb/GaInAsSb/AlGaAsSb double heterostructures for the 1
B. E. Zhurtanov, N. D. Il
Semiconductors, 2008, Volume 42, Number 4, 04580462
- High-power laser diodes of wavelength 808 nm based on various types of asymmetric heterostructures with an ultrawide waveguide
V. V. Bezotosnyĭ, V. V. Vasil
Semiconductors, 2008, Volume 42, Number 3, 03500353
- Effect of high-power nanosecond and femtosecond laser pulses on silicon nanostructures
G. A. Kachurin, S. G. Cherkova, V. A. Volodin, D. V. Marin and M. Deutschmann
Semiconductors, 2008, Volume 42, Number 2, 01830187
- Stimulated radiation of optically pumped Cd x Hg1 − x Te-Based heterostructures at room temperature
A. A. Andronov, Yu. N. Nozdrin, A. V. Okomel
Semiconductors, 2008, Volume 42, Number 2, 01790182
- Deep levels and electron transport in AlGaN/GaN heterostructures
I. V. Antonova, V. I. Polyakov, A. I. Rukavishnikov, V. G. Mansurov and K. S. Zhuravlev
Semiconductors, 2008, Volume 42, Number 1, 00520058
- Electroluminescence from nanostructured silicon embedded in anodic alumina
S. K. Lazarouk, D. A. Sasinovich, P. S. Katsuba, V. A. Labunov, A. A. Leshok and V. E. Borisenko
Semiconductors, 2007, Volume 41, Number 9, 11091112
- A study of isotype photosensitive heterostructures (intrinsic oxide)- n -InSe prepared by long-term thermal oxidation
Z. D. Kovalyuk, O. N. Sydor, V. N. Katerinchuk and V. V. Netyaga
Semiconductors, 2007, Volume 41, Number 9, 10561059
- 1.8-μm laser diodes based on quantum-size AlInGaAs/InP heterostructures
A. V. Lyutetskiĭ, K. S. Borshchev, A. D. Bondarev, T. A. Nalet, N. A. Pikhtin, S. O. Slipchenko, N. V. Fetisova, M. A. Khomylev, A. A. Marmalyuk, Yu. L. Ryaboshtan, V. A. Simakov and I. S. Tarasov
Semiconductors, 2007, Volume 41, Number 7, 08600864
- High-efficiency LEDs based on n -GaSb/ p -GaSb/ n -GaInAsSb/ P -AlGaAsSb type-II thyristor heterostructures
N. D. Stoyanov, B. E. Zhurtanov, A. N. Imenkov, A. P. Astakhova, M. P. Mikhaĭlova and Yu. P. Yakovlev
Semiconductors, 2007, Volume 41, Number 7, 08550859
- Effect of the buffer layer of GaSe intrinsic oxide with nanometer thickness on electrical, photoelectric, and emissive properties of ITO-GaSe heterostructures
S. I. Drapak and Z. D. Kovalyuk
Semiconductors, 2007, Volume 41, Number 3, 03010306
- Electrical properties of n -ZnO/ p -CuO heterostructures
B. M. Vermenichev, O. L. Lisitskiĭ, M. E. Kumekov, S. E. Kumekov, E. I. Terukov and S. Zh. Tokmoldin
Semiconductors, 2007, Volume 41, Number 3, 02880290
- An X-ray diffraction and electron-microscopic study of the influence of gamma radiation on multilayer AlGaAs/InGaAs/GaAs heterostructures
A. V. Bobyl, A. A. Gutkin, P. N. Brunkov, I. A. Zamoryanskaya, M. A. Yagovkina, Yu. G. Musikhin, D. A. Sakseev, S. G. Konnikov, N. A. Maleev, V. M. Ustinov, P. S. Kopjev, V. T. Punin, R. I. Ilkaev and Zh. I. Alferov
Semiconductors, 2006, Volume 40, Number 6, 06870690
- High-power laser diodes (λ = 808
A. Yu. Andreev, A. Yu. Leshko, A. V. Lyutetskiĭ, A. A. Marmalyuk, T. A. Nalyot, A. A. Padalitsa, N. A. Pikhtin, D. R. Sabitov, V. A. Simakov, S. O. Slipchenko, M. A. Khomylev and I. S. Tarasov
Semiconductors, 2006, Volume 40, Number 5, 06110614
- Alternating current conductivity of anisotropically nanostructured silicon
P. A. Forsh, M. N. Martyshov, V. Yu. Timoshenko and P. K. Kashkarov
Semiconductors, 2006, Volume 40, Number 4, 04710475
- Thermophotovoltaic cells based on In0.53Ga0.47As/InP heterostructures
L. B. Karlina, A. S. Vlasov, M. M. Kulagina and N. Kh. Timoshina
Semiconductors, 2006, Volume 40, Number 3, 03460350
- The formation of natural oxide on the mirrors of GaSb/GaInAsSb/GaAlAsSb laser heterostructures at places of emergence of al-rich layers
P. A. Dement
Semiconductors, 2006, Volume 40, Number 11, 12471254
- Formation of nanostructures in a Ga2Se3/GaAs system
N. N. Bezryadin, G. I. Kotov, I. N. Arsent
Semiconductors, 2005, Volume 39, Number 9, 09890992
- Nanostructuring of crystalline grains of natural diamond using ionizing radiation
N. A. Poklonski, T. M. Lapchuk, N. I. Gorbachuk, V. A. Nikolaenko and I. V. Bachuchin
Semiconductors, 2005, Volume 39, Number 8, 08940897
- A ferroelectric field effect transistor based on a Pb(ZrxTi1−x)O3/SnO2 heterostructure
I. E. Titkov, I. P. Pronin, D. V. Mashovets, L. A. Delimova, I. A. Liniichuk and I. V. Grekhov
Semiconductors, 2005, Volume 39, Number 7, 08560860
- High-power flip-chip blue light-emitting diodes based on AlGaInN
D. A. Zakheim, I. P. Smirnova, I. V. Roznanskii, S. A. Gurevich, M. M. Kulagina, E. M. Arakcheeva, G. A. Onushkin, A. L. Zakheim, E. D. Vasil
Semiconductors, 2005, Volume 39, Number 7, 08510855
- The diffusion mechanism in the formation of GaAs and AlGaAs nanowhiskers during the process of molecular-beam epitaxy
G. E. Cirlin, V. G. Dubrovskii, N. V. Sibirev, I. P. Soshnikov, Yu. B. Samsonenko, A. A. Tonkikh and V. M. Ustinov
Semiconductors, 2005, Volume 39, Number 5, 05570564
- Interfacial and interband lasing in an AnAs/InAsSbP heterostructure grown by vapor-phase epitaxy from metal-organic compounds
A. P. Astakhova, N. D. Il
Semiconductors, 2005, Volume 39, Number 4, 04720476
- Vegard
É. P. Domashevskaya, P. V. Seredin, É. A. Dolgopolova, I. E. Zanin, I. N. Arsent
Semiconductors, 2005, Volume 39, Number 3, 03360342
- Photosensitivity of heterostructures based on finely ground semiconductor phases
Yu. A. Nikolaev, V. Yu. Rud
Semiconductors, 2005, Volume 39, Number 11, 12941298
- Special features of structural interaction in (AlGaIn)N/GaN heterostructures used as dislocation filters
I. P. Soshnikov, N. N. Ledentsov, A. F. Tsatsul
Semiconductors, 2005, Volume 39, Number 1, 01000102
- GaAs/Ge heterostructure photovoltaic cells fabricated by a combination of MOCVD and zinc diffusion techniques
V. M. Andreev, V. P. Khvostikov, N. A. Kalyuzhnyi, S. S. Titkov, O. A. Khvostikova and M. Z. Shvarts
Semiconductors, 2004, Volume 38, Number 3, 03550359
- Low-temperature relaxation of elastic stresses in SiGe/Si heterostructures irradiated with Ge+ ions
V. S. Avrutin, Yu. A. Agafonov, A. F. Vyatkin, V. I. Zinenko, N. F. Izyumskaya, D. V. Irzhak, D. V. Roshchupkin, É. A. Steinman, V. I. Vdovin and T. G. Yugova
Semiconductors, 2004, Volume 38, Number 3, 03130318
- Formation of two-and one-dimensional solid-phase quantum nanostructures in the CdHgTe-electrolyte system
V. B. Bozhevolnov, A. M. Yafyasov and P. P. Konorov
Semiconductors, 2004, Volume 38, Number 11, 13321339
- MOCVD-grown AlGaN/GaN heterostructures with high electron mobility
V. V. Lundin, E. E. Zavarin, A. I. Besulkin, A. G. Gladyshev, A. V. Sakharov, M. F. Kokorev, N. M. Shmidt, A. F. Tsatsul
Semiconductors, 2004, Volume 38, Number 11, 13231325
- Metamorphic modulation-doped InAlAs/InGaAs/InAlAs heterostructures with high electron mobility grown on gaas substrates
E. S. Semenova, A. E. Zhukov, A. P. Vasil
Semiconductors, 2003, Volume 37, Number 9, 11041106
- Modification of the nanostructure of diamond-like carbon films by bombardment with xenon ions
I. A. Faizrakhmanov, V. V. Bazarov, A. L. Stepanov and I. B. Khaibullin
Semiconductors, 2003, Volume 37, Number 6, 07230726
- Barrier formation in a heterostructure formed of native oxide and p-InSe. Electrical and photoelectrical properties
S. I. Drapak, V. B. Orletskii, Z. D. Kovalyuk and V. V. Netyaga
Semiconductors, 2003, Volume 37, Number 2, 01870193
- Electrical properties of the p+-Bi2Te3-p-GaSe isotype heterostructure
S. I. Drapak, V. A. Manasson, V. V. Netyaga and Z. D. Kovalyuk
Semiconductors, 2003, Volume 37, Number 2, 01720177
- 1.7
A. V. Lyutetskii, N. A. Pikhtin, S. O. Slipchenko, Z. N. Sokolova, N. V. Fetisova, A. Yu. Leshko, V. V. Shamakhov, A. Yu. Andreev, E. G. Golikova, Yu. A. Ryaboshtan and I. S. Tarasov
Semiconductors, 2003, Volume 37, Number 11, 13561362
- Spontaneous formation of the periodic composition-modulated nanostructure in CdxHg1−xTe films
P. A. Bakhtin, V. S. Varavin, S. A. Dvoretskii, A. F. Kravchenko, A. V. Latyshev, N. N. Mikchailov, I. V. Sabinina, Yu. G. Sidorov and M. V. Yakushev
Semiconductors, 2003, Volume 37, Number 11, 13311335
- Photoelectric phenomena in ZnO:Al-p-Si heterostructures
S. E. Nikitin, Yu. A. Nikolaev, I. K. Polushina, V. Yu. Rud
Semiconductors, 2003, Volume 37, Number 11, 12911295
- Photoconductivity of nanostructured hydrogenated silicon films
O. A. Golikova
Semiconductors, 2002, Volume 36, Number 6, 06910694
- Ordering of nanostructures in a Si/Ge0.3Si0.7/Ge system during molecular beam epitaxy
G. E. Cirlin, V. A. Egorov, L. V. Sokolov and P. Werner
Semiconductors, 2002, Volume 36, Number 11, 12941298
- Laser beam epitaxy of HgCdTe/Si heterostructures
S. V. Plyatsko and N. N. Bergush
Semiconductors, 2001, Volume 35, Number 4, 03740376
- Record power characteristics of InGaAs/AlGaAs/GaAs heterostructure lasers
D. A. Livshits, A. Yu. Egorov, I. V. Kochnev, V. A. Kapitonov, V. M. Lantratov, N. N. Ledentsov, T. A. Nalyot and I. S. Tarasov
Semiconductors, 2001, Volume 35, Number 3, 03650369
- InAsSb/InAsSbP double-heterostructure lasers emitting in the 3
T. N. Danilova, A. N. Imenkov, N. M. Kolchanova and Yu. P. Yakovlev
Semiconductors, 2001, Volume 35, Number 12, 14041417
- Photoelectric phenomena in (μcxa1−x)-Si:H/c-Si heterostructures
H. Mell, Yu. A. Nikolaev, V. Yu. Rud
Semiconductors, 2001, Volume 35, Number 11, 12591262
- Nanostructured a-Si:H films obtained by silane decomposition in a magnetron chamber
O. A. Golikova, M. M. Kazanin, A. N. Kuznetsov and E. V. Bogdanova
Semiconductors, 2000, Volume 34, Number 9, 10851089
- Photovoltaic effect in a-Si:H/n-InSe heterostructures
R. N. Bekimbetov, Yu. A. Nikolaev, V. Yu. Rud
Semiconductors, 2000, Volume 34, Number 9, 10641067
- Properties of diode heterostructures based on nanocrystalline n-SnO2 on p-Si under the conditions of gas Adsorption
R. B. Vasil
Semiconductors, 2000, Volume 34, Number 8, 09550959
- Thermoelectric and photoelectric properties of the p-n CuInSe2/CdS heterostructures obtained by the quasi-equilibrium deposition method
M. -R. A. Magomedov, Sh. M. Ismailov, Dzh. Kh. Magomedova and P. P. Khokhlachev
Semiconductors, 2000, Volume 34, Number 6, 06620664
- Photoelectric phenomena in a-Si:H/p-CuInSe2 heterostructures
Yu. A. Nikolaev, V. Yu. Rud
Semiconductors, 2000, Volume 34, Number 6, 06580661
- Absorption features in a-Si/ZrOx nanostructures
A. F. Khokhlov, I. A. Chuchmai and A. V. Ershov
Semiconductors, 2000, Volume 34, Number 3, 03440347
- Long-wavelength light-emitting diodes (λ=3.4
N. V. Zotova, S. S. Kizhaev, S. S. Molchanov, T. B. Popova and Yu. P. Yakovlev
Semiconductors, 2000, Volume 34, Number 12, 14021405
- InAsSb/InAsSbP double-heterostructure lasers emitting at 3
T. N. Danilova, A. N. Imenkov, V. V. Sherstnev and Yu. P. Yakovlev
Semiconductors, 2000, Volume 34, Number 11, 13431350
- InGaAsSb(Gd)/InAsSbP double heterostructure lasers (λ=3.0
M. Aidaraliev1, T. Beyer2, N. V. Zotova1, S. A. Karandashev1, B. A. Matveev1 Contact Information, M. A. Remennyi1, N. M. Stus
Semiconductors, 2000, Volume 34, Number 7, 08480852
- Spectral characteristics of lasers based on InGaAsSb/InAsSbP double heterostructures (λ=3.0
M. Aidaraliev, N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus
Semiconductors, 2000, Volume 34, Number 4, 04880492
- GaInAsSb/GaSb heterostructures grown in the spinodal decay region by liquid-phase epitaxy from Sb-enriched solution-melts
V. I. Vasil
Semiconductors, 1999, Volume 33, Number 9, 10341036
- Irradiation as a possible method for producing SiC heterostructures
A. A. Lebedev
Semiconductors, 1999, Volume 33, Number 9, 10041006
- Short-wavelength current tuning of InAsSb/InAsSbP heterostructure lasers caused by an injection nonuniformity
A. P. Danilova, T. N. Danilova, A. N. Imenkov, N. M. Kolchanova, M. V. Stepanov, V. V. Sherstnev and Yu. P. Yakovlev
Semiconductors, 1999, Volume 33, Number 9, 09910995
- Heterostructure solar cells
V. M. Andreev
Semiconductors, 1999, Volume 33, Number 9, 09420945
- Fabrication and properties of In2O3/CdS/CuInSe2 heterostructures
V. Yu. Rud
Semiconductors, 1999, Volume 33, Number 7, 07360739
- Gain and internal losses in InGaAsSb/InAsSbP double-heterostructure lasers
M. Aidaraliev, N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus
Semiconductors, 1999, Volume 33, Number 6, 07000703
- Optical activity of Yb in GaAs and low-dimensional GaAs/GaAlAs structures
A. A. Gippius, V. M. Konnov, V. A. Dravin, N. N. Loiko, I. P. Kazakov and V. V. Ushakov
Semiconductors, 1999, Volume 33, Number 6, 06270629
- Rapid tuning of the generation frequency of InAsSb/InAsSbP diode lasers (λ=3.3
A. P. Danilova, T. N. Danilova, A. N. Imenkov, N. M. Kolchanova, M. V. Stepanov, V. V. Sherstnev and Yu. P. Yakovlev
Semiconductors, 1999, Volume 33, Number 2, 02100215
- Electrical and photoelectric characteristics of an isotypic n-ZnO-n-Si structure
S. V. Slobodchikov, Kh. M. Salikhov and E. V. Russu
Semiconductors, 1999, Volume 33, Number 4, 04210422
- Self-organizing nanoheterostructures in InGaAsP solid solutions
L. S. Vavilova, A. V. Ivanova, V. A. Kapitonov, A. V. Murashova, I. S. Tarasov, I. N. Arsent
Semiconductors, 1998, Volume 32, Number 6, 05900593
- Photosensitivity of porous silicon-layered III
A. A. Lebedev, Yu. V. Rud
Semiconductors, 1998, Volume 32, Number 3, 03200321
- Preparation and photosensitivity of heterostructures based on anodized silicon carbide
A. A. Lebedev, A. A. Lebedev, Yu. V. Rud
Semiconductors, 1998, Volume 32, Number 3, 02950296
- Formation of InGaAs/GaAs nanostructures by submonolayer deposition from molecular beams
G. É. Tsyrlin, V. N. Petrov, V. G. Dubrovskii, N. K. Polyakov, S. Ya. Tipisev, A. O. Golubok and N. N. Ledentsov
Semiconductors, 1997, Volume 31, Number 8, 07680772
- Photosensitivity of InP/CdS heterostructures in linearly polarized light
V. M. Botnaryuk, L. V. Gorchak, V. N. Pleshka, V. Yu. Rud
Semiconductors, 1997, Volume 31, Number 2, 01940196
- Routes Towards Anderson-Like Localization of Bose-Einstein Condensates in Disordered Optical Lattices
T. Schulte, S. Drenkelforth, J. Kruse, W. Ertmer, J. Arlt, K. Sacha, J. Zakrzewski, and M. Lewenstein
Phys. Rev. Lett. 95, 170411 (2005)
- Creation of arbitrary coherent superposition states by stimulated Raman adiabatic passage
Z. Kis, N. V. Vitanov, A. Karpati, C. Barthel, and K. Bergmann
Phys. Rev. A 72, 033403 (2005)