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Semiconductors, 2004, Volume 38, Number 5, 05720575
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J. N. Farahani, D. W. Pohl, H.-J. Eisler, and B. Hecht
Phys. Rev. Lett. 95, 017402 (2005)
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Phys. Rev. Lett. 94, 228301 (2005)
- Detection of Single-Electron Charging in an Individual InAs Quantum Dot by Noncontact Atomic-Force Microscopy
Romain Stomp, Yoichi Miyahara, Sacha Schaer, Qingfeng Sun, Hong Guo, Peter Grutter, Sergei Studenikin, Philip Poole, and Andy Sachrajda
Phys. Rev. Lett. 94, 056802 (2005)
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Phys. Rev. B 72, 155323 (2005)
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Phys. Rev. B 69, 233312 (2004)
- Spectroscopy of the electronic states in InAs quantum dots grown on InxAl1-xAs/InP(001)
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Phys. Rev. B 69, 155333 (2004)
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Phys. Rev. Lett. 90, 146101 (2003)
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Phys. Rev. B 67, 205308 (2003)
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Phys. Rev. B 67, 075302 (2003)
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M. Arzberger, G. Böhm, M.C. Amann, G. Abstreiter
Phys. Stat. Sol. (b), 224, 827 (2001)
- Self-assembled In0.5Ga0.5As quantum-dot lasers with doped active region
Nien-Tze Yeh Jia-Ming Lee Tzer-En Nee Jen-Inn Chyi
IEEE J. Phot. Technol. Lett., 12, 1123 (2000)
- Modification of the Fermi-level pinning of GaAs surfaces through InAs quantum dots
C. Walther, R. P. Blum, H. Niehus, W. T. Masselink and A. Thamm
Phys. Rev. B 60, R13962 (1999)
- Vertically self-organized Ge/Si(001) quantum dots in multilayer structures
Vinh Le Thanh, V. Yam, P. Boucaud, F. Fortuna, C. Ulysse, D. Bouchier, L. Vervoort, and J.-M. Lourtioz
Phys. Rev. B 60, 5851 (1999)
- Effect of GaAs(0 0 1) surface misorientation on the emission from MBE grown InAs quantum dots
I. V. Kudryashov, , V. P. Evtikhiev, V. E. Tokranov, E. Yu. Kotel'nikov, A. K. Kryganovskii and A. N. Titkov
J. Crys.Growth, 202, 1158 (1999)
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V. P. Evtikhiev, V. E. Tokranov, A. K. Kryganovskii, A. M. Boiko, R. A. Suris and A. N. Titkov
J. Crys. Growth, 202, 1154 (1999)
- Continuous stimulated emission at T = 293 K from separate-confinement heterostructure diode lasers with one layer of InAs quantum dots grown on vicinal GaAs(001) surfaces misoriented in the [010] direction in the active region
V. P. Evtikhiev, I. V. Kudryashov, E. Yu. Kotel'nikov, V. E. Tokranov, A. N. Titkov, I. S. Tarasov, and Zh. I. Alferov
Semicond., 32, 1323 (1998)
- Imaging the Elastic Nanostructure of Ge Islands by Ultrasonic Force Microscopy
Oleg V. Kolosov, Martin R. Castell, Chris D. Marsh, G. Andrew D. Briggs, T. I. Kamins and R. Stanley Williams
Phys. Rev. Lett. 81, 1046 (1998)
- Transmission-electron microscopy study of the shape of buried InxGa1-xAs/GaAs quantum dots
X. Z. Liao, J. Zou, X. F. Duan, D. J. H. Cockayne, R. Leon and C. Lobo
Phys. Rev. B 58, R4235 (1998)
- Nucleation and growth of self-assembled Ge/Si(001) quantum dots
Vinh Le Thanh, P. Boucaud, D. Débarre, Y. Zheng, D. Bouchier and J.-M. Lourtioz
Phys. Rev. B 58, 13115 (1998)
- Effects of interface-layers composition and strain distribution on the optical transitions of InAs quantum dots on InP
H. Folliot, S. Loualiche, B. Lambert, V. Drouot and A. Le Corre
Phys. Rev. B 58, 10700 (1998)
- Suppression of Ostwald ripening in In0.5Ga0.5As quantum dots on a vicinal (100) substrate
Byung Don Min, Yong Kim, Eun Kyu Kim, Suk-Ki Min and Department of Physics, Korea University, Seoul 136-701, Korea
Phys. Rev. B 57, 11879 (1998)
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