Optical Properties
- Optical confinement in laser diodes based on nitrides of Group III elements. Part 2: Analysis of heterostructures on various substrates
T. E. Slobodyan, K. A. Bulashevich and S. Yu. Karpov
Semiconductors, 2008, Volume 42, Number 7, 08520857
- Methods of controlling the emission wavelength in InAs/GaAsN/InGaAsN heterostructures on GaAs substrates
V. V. Mamutin, A. Yu. Egorov, N. V. Kryzhanovskaya, V. S. Mikhrin, A. M. Nadtochy and E. V. Pirogov
Semiconductors, 2008, Volume 42, Number 7, 08050812
- Electroreflectance spectra of InGaN/AlGaN/GaN quantum-well heterostructures
L. P. Avakyants, M. L. Badgutdinov, P. Yu. Bokov, A. V. Chervyakov, S. S. Shirokov, A. E. Yunovich, A. A. Bogdanov, E. D. Vasil
Semiconductors, 2007, Volume 41, Number 9, 10601066
- High-power laser diodes with an emission wavelength of 835 nm on the basis of various types of heterostructures
A. V. Murashova, D. A. Vinokurov, N. A. Pikhtin, S. O. Slipchenko, V. V. Shamakhov, V. V. Vasilyeva, V. A. Kapitonov, A. Yu. Leshko, A. V. Lyutetskiy, T. A. Nalet, D. N. Nikolaev, A. L. Stankevich, N. V. Fetisova, I. S. Tarasov, Y. S. Kim, D. H. Kang and C. Y. Lee
Semiconductors, 2006, Volume 42, Number 7, 08620867
- High-power lasers (λ = 940
D. A. Vinokurov, A. L. Stankevich, V. V. Shamakhov, V. A. Kapitonov, A. Yu. Leshko, A. V. Lyutetskiĭ, D. N. Nikolaev, N. A. Pikhtin, N. A. Rudova, Z. N. Sokolova, S. O. Slipchenko, M. A. Khomylev and I. S. Tarasov
Semiconductors, 2006, Volume 40, Number 6, 07450748
- Estimates of the exciton transition energy in NH/3C/NH (N = 2, 4, 6, 8) heterostructures based on silicon carbide polytypes
S. Yu. Davydov, A. A. Lebedev and O. V. Posrednik
Semiconductors, 2006, Volume 40, Number 5, 05490553
- The optical properties of heterostructures with quantum-confined InGaAsN layers on a GaAs substrate and emitting at 1.3
N. V. Kryzhanovskaya, A. Yu. Egorov, V. V. Mamutin, N. K. Polyakov, A. F. Tsatsul
Semiconductors, 2005, Volume 39, Number 6, 07030708
- Superradiance in quantum heterostructures
A. I. Klimovskaya, Yu. A. Driga, E. G. Gule and O. O. Pikaruk
Semiconductors, 2003, Volume 37, Number 6, 06810685
- Current and temperature tuning of quantum-well lasers operating in 2.0-to 2.4-
A. P. Astakhova, A. N. Baranov, A. Viset, A. N. Imenkov, N. M. Kolchanova, N. D. Stoyanov, A. Chernyaev, D. A. Yarekha and Yu. P. Yakovlev
Semiconductors, 2003, Volume 37, Number 4, 04850490
- Effect of carrier localization on the optical properties of MBE-grown GaAsN/GaAs heterostructures
B. V. Volovik, N. V. Kryzhanovskaya, D. S. Sizov, A. R. Kovsh, A. F. Tsatsul
Semiconductors, 2002, Volume 36, Number 9, 09971000
- Arrays of 128×128 photodetectors based on HgCdTe layers and multilayer heterostructures with GaAs/AlGaAs quantum wells
V. N. Ovsyuk, Yu. G. Sidorov, V. V. Vasil
Semiconductors, 2001, Volume 35, Number 9, 11101116
- High power InGaAsSb(Gd)/InAsSbP double heterostructure lasers (λ=3.3
M. Aydaraliev, N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus
Semiconductors, 2001, Volume 35, Number 10, 12081212
- Zero-phonon and dipole Γ-X electron transitions in GaAs/AlAs quantum-well heterostructures in a longitudinal electric field
V. Ya. Aleshkin and A. A. Andronov
Semiconductors, 2000, Volume 34, Number 5, 05750582
- Photovoltaic effect in an asymmetric GaAs/AlGaAs nanostructure produced as a result of laser excitation
I. V. Kucherenko, L. K. Vodop
Semiconductors, 1997, Volume 31, Number 7, 07400742
- Cold Atom Dynamics in a Quantum Optical Lattice Potential
Christoph Maschler and Helmut Ritsch
Phys. Rev. Lett. 95, 260401 (2005)
- Dark-State Luminescence of Macroatoms at the Near Field
Ulrich Hohenester, Guido Goldoni, and Elisa Molinari
Phys. Rev. Lett. 95, 216802 (2005)
- Suppression of Nonradiative Recombination by V-Shaped Pits in GaInN/GaN Quantum Wells Produces a Large Increase in the Light Emission Efficiency
A. Hangleiter, F. Hitzel, C. Netzel, D. Fuhrmann, U. Rossow, G. Ade, and P. Hinze
Phys. Rev. Lett. 95, 127402 (2005)
- Photoemission of a Quantum Cavity with a Nonmagnetic Spin Separator
C. Koitzsch, C. Battaglia, F. Clerc, L. Despont, M. G. Garnier, and P. Aebi
Phys. Rev. Lett. 95, 126401 (2005)
- Effect of dc and ac excitations on the longitudinal resistance of a two-dimensional electron gas in highly doped GaAs quantum wells
A. A. Bykov, Jing-qiao Zhang, Sergey Vitkalov, A. K. Kalagin, and A. K. Bakarov
Phys. Rev. B 72, 245307 (2005)
- Excitonic and impurity-related optical transitions in Be δ-doped GaAs∕AlAs multiple quantum wells: Fractional-dimensional space approach
J. Kundrotas, A. Čerškus, S. Ašmontas, G. Valušis, B. Sherliker, M. P. Halsall, M. J. Steer, E. Johannessen, P. Harrison
Phys. Rev. B 72, 235322 (2005)
- Structural, electrical, and magneto-optical characterization of paramagnetic GaMnAs quantum wells
M. Poggio, R. C. Myers, N. P. Stern, A. C. Gossard, and D. D. Awschalom
Phys. Rev. B 72, 235313 (2005)
- Relation between phenomenological few-level models and microscopic theories of the nonlinear optical response of semiconductor quantum wells
N. H. Kwong, I. Rumyantsev, R. Binder, Arthur L. Smirl
Phys. Rev. B 72, 235312 (2005)
- Magneto-optics of two-dimensional electron gases modified by strong Coulomb interactions in ZnSe quantum wells
D. Keller, D. R. Yakovlev, G. V. Astakhov, W. Ossau, S. A. Crooker, T. Slobodskyy, A. Waag, G. Schmidt, and L. W. Molenkamp
Phys. Rev. B 72, 235306 (2005)
- Thickness dependence of surface plasmon damping and dispersion in ultrathin Ag films
Yinghui Yu, Ying Jiang, Zhe Tang, Qinlin Guo, Jinfeng Jia, Qikun Xue, Kehui Wu, and Enge Wang
Phys. Rev. B 72, 205405 (2005)
- Electronic and optical properties of Si∕SiO2 nanostructures. I. Electron-hole collective processes in single Si∕SiO2 quantum wells
N. Pauc, V. Calvo, J. Eymery, F. Fournel, and N. Magnea
Phys. Rev. B 72, 205324 (2005)
- Optical and electronic properties in (In0.53Ga0.47As)1−z∕(In0.52Al0.48As)z digital alloys
J. T. Woo, J. H. Kim, T. W. Kim, J. D. Song, and Y. J. Park
Phys. Rev. B 72, 205320 (2005)
- Finite size effects in surface states of stepped Cu nanostripes
J. E. Ortega, M. Ruiz-Osés, and J. Kuntze
Phys. Rev. B 72, 195416 (2005)
- Spatially selective laser cooling of carriers in semiconductor quantum wells
Danhong Huang, T. Apostolova, P. M. Alsing, and D. A. Cardimona
Phys. Rev. B 72, 195308 (2005)
- Bound-to-bound and bound-to-free transitions in surface photovoltage spectra: Determination of the band offsets for InxGa1
Massimo Galluppi, Lutz Geelhaar, and Henning Riechert, Michael Hetterich and Andreas Grau, Stefan Birner, Wolfgang Stolz
Phys. Rev. B 72, 155324 (2005)
- Intra-valence-band mixing in strain-compensated SiGe quantum wells
S. Tsujino, A. Borak, C. Falub, T. Fromherz, L. Diehl, H. Sigg and D. Grützmacher
Phys. Rev. B 72, 153315 (2005)
- Amorphous two-dimensional optical lattices with coherently controlled morphologies in quantum well structures
S. M. Sadeghi
Phys. Rev. B 72, 125336 (2005)
- Nonparabolic band effects in GaAs∕AlxGa1−xAs quantum dots and ultrathin quantum wells
N. Schildermans, M. Hayne, V. V. Moshchalkov, A. Rastelli, O. G. Schmidt
Phys. Rev. B 72, 115312 (2005)
- Short-period oscillations in photoemission from thin films of Cr(100)
Denis V. Vyalikh, Peter Zahn, Manuel Richter, Yu. S. Dedkov, and S. L. Molodtsov
Phys. Rev. B 72, 041402(R) (2005)
- Photoconductivity of InxAl1−xAs parabolic quantum wells in the optical-phonon regime
K. Bittkau, N. Mecking, Y. S. Gui, Ch. Heyn, D. Heitmann, and C.-M. Hu
Phys. Rev. B 71, 035337 (2005)
- Light intensity-voltage correlations and leakage-current excess noise in a single-mode semiconductor laser
I. Maurin, I. Protsenko, J.-P. Hermier, A. Bramati, P. Grangier, and E. Giacobino
Phys. Rev. A 72, 033823 (2005)
- Multidimensional quantum well laser and temperature dependence of its threshold current
Y. Arakawa and H. Sakaki
Appl. Phys. Lett., 40, 939 (1982)